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公开(公告)号：US20180173093A1
公开(公告)日：2018-06-21
申请号：US15380121
申请日：2016-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng HSU , Hsin-Chang LEE , Yun-Yue LIN , Hsuan-Chen CHEN , Hsuan-I WANG , Anthony YEN
CPC classification number: G03F1/64 , G03F1/22 , G03F7/2004
Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
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公开(公告)号：US20190204730A1
公开(公告)日：2019-07-04
申请号：US16228339
申请日：2018-12-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yun-Yue LIN , Hsuan-Chen CHEN , Chih-Cheng LIN , Hsin-Chang LEE , Yao-Ching KU , Wei-Jen LO , Anthony YEN , Chin-Hsiang LIN , Mark CHIEN
Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
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公开(公告)号：US20200348241A1
公开(公告)日：2020-11-05
申请号：US16933067
申请日：2020-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号：US20190033225A1
公开(公告)日：2019-01-31
申请号：US15883971
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/94 , G01N21/956
CPC classification number: G01N21/8806 , G01N21/94 , G01N21/954 , G01N21/95623 , G03F7/2037 , G03F7/70033 , G03F7/70166 , G03F7/70175 , G03F7/70916 , H01L21/0275
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号：US20180292744A1
公开(公告)日：2018-10-11
申请号：US16010118
申请日：2018-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Chang LEE , Pei-Cheng HSU , Yun-Yue LIN , Hsuan-Chen CHEN , Hsuan-I WANG , Anthony YEN
CPC classification number: G03F1/64 , G03F1/22 , G03F1/62 , G03F7/2004
Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
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Patent Agency Ranking
公开(公告)号：US20180173092A1
公开(公告)日：2018-06-21
申请号：US15381033
申请日：2016-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yun-Yue LIN , Hsuan-Chen CHEN , Chih-Cheng LIN , Hsin-Chang LEE , Yao-Ching KU , Wei-Jen LO , Anthony YEN , Chin-Hsiang LIN , Mark CHIEN
Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
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公开(公告)号：US20150309404A1
公开(公告)日：2015-10-29
申请号：US14260651
申请日：2014-04-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
Inventor： Yun-Yue LIN , Chia-Jen CHEN , Hsin-Chang LEE , Anthony YEN
Abstract: A pellicle structure, a pellicle-mask structure, and a method for forming the pellicle structure are provided. The pellicle structure includes a pellicle film made of a carbon-based material. In addition, the pellicle film is configured to protect a mask structure in a lithography process. The pellicle-mask structure includes a mask substrate having a mask pattern formed over the mask substrate and the pellicle frame disposed on the mask substrate. The pellicle-mask structure further includes the pellicle film disposed on the pellicle frame.
Abstract translation: 提供防护薄膜组件，防护薄膜组件，以及防护薄膜组件的形成方法。 防护薄膜组件包括由碳基材料制成的防护薄膜。 此外，防护薄膜被配置为在光刻工艺中保护掩模结构。 防护薄膜组件包括具有形成在掩模基板上的掩模图案和设置在掩模基板上的防护膜框架的掩模基板。 防护薄膜组件还包括设置在防护薄膜组件框架上的防护薄膜。
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8.发明申请LITHOGRAPHY SYSTEM AND METHOD FOR PATTERNING PHOTORESIST LAYER ON EUV MASK 有权用于在EUV掩模上绘制光刻胶层的光刻系统和方法公开(公告)号：US20150309401A1
公开(公告)日：2015-10-29
申请号：US14261809
申请日：2014-04-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yun-Yue LIN , Chia-Jen CHEN , Hsin-Chang LEE , Anthony YEN
Abstract: A lithography system for an extreme ultra violet (EUV) mask is provided. The lithography system includes a coupling module. The coupling module includes at least one mask contact element configured to touch a peripheral area of the EUV mask. The lithography system also includes an ammeter having an end electrically connected to the EUV mask through the at least one mask contact element and another end connected to a ground potential. The ammeter includes a sensor configured to measure a current conducting from the EUV mask to the ground potential and a compensation circuit configured to provide a compensation current that is opposite to the current measured by the sensor.
Abstract translation: 提供了用于极紫外（EUV）掩模的光刻系统。 光刻系统包括耦合模块。 耦合模块包括被配置为触摸EUV掩模的外围区域的至少一个掩模接触元件。 光刻系统还包括电流表，其具有通过至少一个掩模接触元件电连接到EUV掩模的端部，另一端连接到接地电位。 电流表包括传感器，其被配置为测量从EUV掩模传导到地电位的电流;以及补偿电路，其被配置为提供与由传感器测量的电流相反的补偿电流。
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公开(公告)号：US20200025688A1
公开(公告)日：2020-01-23
申请号：US16587010
申请日：2019-09-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号：US20170352144A1
公开(公告)日：2017-12-07
申请号：US15254607
申请日：2016-09-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shinn-Sheng YU , Anthony YEN , Wen-Chuan WANG , Sheng-Chi CHIN
IPC: G06T7/00 , G03F1/72 , G03F1/24 , G03F1/26 , H01L21/027
CPC classification number: G06T7/0004 , G03F1/24 , G03F1/26 , G03F1/72 , G03F1/84 , G06T7/001 , G06T7/0081 , G06T7/11 , G06T2207/10004 , G06T2207/10056 , G06T2207/30148 , H01L21/0273
Abstract: A method includes inspecting a mask to locate a defect region for a defect of the mask. A phase distribution of an aerial image of the defect region is acquired. A point spread function of an imaging system is determined. One or more repair regions of the mask are identified based on the phase distribution of the aerial image of the defect region and the point spread function. A repair process is performed to the one or more repair regions of the mask to form one or more repair features.
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