公开(公告)号：US20150255272A1

公开(公告)日：2015-09-10

申请号：US14716917

申请日：2015-05-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

IPC: H01L21/027 ,  G03F1/22 ,  G03F7/20

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

公开(公告)号：US20200310258A1

公开(公告)日：2020-10-01

申请号：US16902087

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Fu LIN ,  Tung-Jung CHANG ,  Chia-Chen CHEN

IPC: G03F7/20 ,  B08B3/12 ,  B08B7/02

Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

公开(公告)号：US20140218714A1

公开(公告)日：2014-08-07

申请号：US13758114

申请日：2013-02-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

IPC: G03F1/00

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

公开(公告)号：US20200025688A1

公开(公告)日：2020-01-23

申请号：US16587010

申请日：2019-09-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Shang-Chieh CHIEN ,  Shang-Ying WU ,  Li-Kai CHENG ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Anthony YEN ,  Chia-Chen CHEN

IPC: G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/94 ,  G01N21/954

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US20190155178A1

公开(公告)日：2019-05-23

申请号：US15902528

申请日：2018-02-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Fu LIN ,  Tung-Jung CHANG ,  Chia-Chen CHEN

IPC: G03F7/20 ,  B08B3/12

Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

公开(公告)号：US20140111781A1

公开(公告)日：2014-04-24

申请号：US13654750

申请日：2012-10-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shu-Hao CHANG ,  Tsiao-Chen WU ,  Chia-Hao HSU ,  Chia-Chen CHEN ,  Ying-Yu CHEN ,  Tzu-Li LEE ,  Shang-Chieh CHIEN ,  Jeng-Horng CHEN ,  Anthony YEN

IPC: G03F7/20

CPC classification number: G03F7/2002 ,  G03F7/20 ,  G03F7/70916 ,  G03F7/70933

Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

Abstract translation: 提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。 产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。 惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。 惰性气体迅速耗尽并且在曝光位置包括短的共振时间。 惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

公开(公告)号：US20200004168A1

公开(公告)日：2020-01-02

申请号：US16404235

申请日：2019-05-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Hsun CHEN ,  Ming-Hsun TSAI ,  Shao-Hua WANG ,  Han-Lung CHANG ,  Li-Jui CHEN ,  Chia-Chen CHEN

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.

公开(公告)号：US20150187663A1

公开(公告)日：2015-07-02

申请号：US14656754

申请日：2015-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao HSU ,  Pei-Cheng HSU ,  Chia-Ching HUANG ,  Chih-Ming CHEN ,  Chia-Chen CHEN

IPC: H01L21/66 ,  G06F17/50 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L22/12 ,  G03F1/00 ,  G06F17/5068 ,  H01L21/02697 ,  H01L21/31144 ,  H01L21/32051 ,  H01L21/3212 ,  H01L21/32133

Abstract: A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

Abstract translation: 一种在半导体工艺中补偿局部焦点误差的系统和方法。 该方法包括提供掩模版并且在掩模版的第一部分处施加基于与掩模版的第一部分对应的晶片的第一部分的估计局部聚焦误差的台阶高度。 在掩模版上形成多层涂层，并在多层涂层上形成吸收层。 在吸收层上形成光致抗蚀剂。 对光致抗蚀剂进行图案化，对吸收层进行蚀刻并除去残留的光致抗蚀剂。

公开(公告)号：US20200348608A1

公开(公告)日：2020-11-05

申请号：US16933872

申请日：2020-07-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Hsun CHEN ,  Ming-Hsun TSAI ,  Shao-Hua WANG ,  Han-Lung CHANG ,  Li-Jui CHEN ,  Chia-Chen CHEN

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.

公开(公告)号：US20200348241A1

公开(公告)日：2020-11-05

申请号：US16933067

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Shang-Chieh CHIEN ,  Shang-Ying WU ,  Li-Kai CHENG ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Anthony YEN ,  Chia-Chen CHEN

IPC: G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/94 ,  G01N21/954

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.