公开(公告)号：US20190096840A1

公开(公告)日：2019-03-28

申请号：US15715132

申请日：2017-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ai-Tee Ang ,  Shing-Chao Chen ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Ching-Yao Lin

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/56

Abstract: An integrated fan-out package includes a first and second dies, an encapsulant, and a redistribution structure. The first and second dies respectively has an active surface, a rear surface opposite to the active surface, and conductive posts on the active surface. The first and second dies are different types of dies. The active and rear surfaces of the first die are respectively levelled with the active and rear surfaces of the second die. Top surfaces of the conductive posts of the first and second dies are levelled. The conductive posts of the first and second dies are wrapped by same material. The encapsulant encapsulates sidewalls of the first and second dies. A first surface of the encapsulant is levelled with the active surfaces. The second surface of the encapsulant is levelled with the rear surfaces. The redistribution structure is disposed over the first die, the second die, and the encapsulant.

公开(公告)号：US20200321290A1

公开(公告)日：2020-10-08

申请号：US16905928

申请日：2020-06-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yuan Teng ,  Hao-Yi Tsai ,  Tin-Hao Kuo ,  Ching-Yao Lin ,  Teng-Yuan Lo ,  Chih Wang

IPC: H01L23/00 ,  H01L25/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L25/11

Abstract: A semiconductor package includes a first redistribution structure, a semiconductor die electrically coupled to the first redistribution structure, a die attach material interposed between the first redistribution structure and the semiconductor die, and an insulating encapsulant disposed on the first redistribution structure and covering the semiconductor die and the die attach material. A bottom of the semiconductor die is embedded in the die attach material, and a thickness of a portion of the die attach material disposed over a spacing of conductive traces of the first redistribution structure is greater than a thickness of another portion of the die attach material disposed over the conductive traces of the first redistribution structure and underlying the bottom of the semiconductor die.

公开(公告)号：US10797008B2

公开(公告)日：2020-10-06

申请号：US16691518

申请日：2019-11-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yuan Teng ,  Hao-Yi Tsai ,  Tin-Hao Kuo ,  Ching-Yao Lin ,  Teng-Yuan Lo ,  Chih Wang

IPC: H01L23/00 ,  H01L25/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L25/11

Abstract: A manufacturing method of a semiconductor package includes at least the following steps. A dielectric layer is formed on a conductive pattern and in a space between the conductive pattern, where a concave area of the dielectric layer is formed corresponding to the space between the conductive pattern. A semiconductor die is disposed on the concave area of the dielectric layer with a die attach material interposed therebetween. A pressure is applied to the die attach material so that the concave area of the dielectric layer is filled with the die attach material, and a portion of the die attach material is extruded from the concave area to expand wider than an area of the semiconductor die. An insulating encapsulant is formed on the dielectric layer to cover the semiconductor die. Other methods for forming a semiconductor package are also provided.

公开(公告)号：US20200118945A1

公开(公告)日：2020-04-16

申请号：US16714793

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yuan Teng ,  Hao-Yi Tsai ,  Tin-Hao Kuo ,  Ching-Yao Lin ,  Teng-Yuan Lo ,  Chih Wang

IPC: H01L23/00 ,  H01L25/11 ,  H01L21/56 ,  H01L21/48 ,  H01L23/538 ,  H01L23/31 ,  H01L25/00

Abstract: A semiconductor package includes a first redistribution structure, a semiconductor die disposed on the first redistribution structure, a die attach material disposed between the first redistribution structure and the semiconductor die, and an insulating encapsulant disposed on the first redistribution structure. A first shortest distance from a midpoint of a bottom edge of the semiconductor die to a midpoint of an bottom edge of an extruded region of the die attach material in a width direction of the semiconductor die is greater than a second shortest distance between an endpoint of the bottom edge of the semiconductor die to an endpoint of the bottom edge of the extruded region of the die attach material. The insulating encapsulant encapsulates the semiconductor die and the die attach material. An inclined interface is between the insulating encapsulant and the extruded region of the die attach material.