公开(公告)号：US20180204758A1

公开(公告)日：2018-07-19

申请号：US15918623

申请日：2018-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chihy-Yuan Cheng ,  Chun-Chang Wu ,  Shun-Shing Yang ,  Ching-Sen Kuo ,  Feng-Jia Shiu ,  Chun-Chang Chen

IPC: H01L21/765 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L21/765 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/0619

Abstract: A semiconductor structure includes a substrate having a first region and a second region being adjacent each other; a first patterned layer formed on the substrate, wherein the first patterned layer includes first features in the first region, wherein the second region is free of the patterned layer; and a first guard ring disposed in the second region and surrounding the first features, wherein the first guard ring includes a first width W1 and is spaced a first distance D1 from the first features, W1 being greater than D1.

公开(公告)号：US09917006B1

公开(公告)日：2018-03-13

申请号：US15260555

申请日：2016-09-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chihy-Yuan Cheng ,  Chun-Chang Wu ,  Shun-Shing Yang ,  Ching-Sen Kuo ,  Feng-Jia Shiu ,  Chun-Chang Chen

IPC: H01L27/00 ,  H01L21/765 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L21/765 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/0619

Abstract: A method includes forming a patterned layer on a substrate having a first region and a second region being adjacent each other. The patterned layer includes first features in the first region. The second region is free of the patterned layer. The method further includes forming a material layer on the patterned layer and the substrate; forming a first guard ring disposed in the second region and surrounding the first features; forming a flowable-material (FM) layer over the material layer; forming a patterned resist layer over the FM layer, wherein the patterned resist layer includes a plurality of openings; and transferring the plurality of openings to the material layer.