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    Via Structure And Methods Of Forming The Same
    1.
    发明申请
    Via Structure And Methods Of Forming The Same 有权

    公开(公告)号：US20230059026A1

    公开(公告)日：2023-02-23

    申请号：US17977317

    申请日：2022-10-31

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Wei-Chieh Huang ,  Jieh-Jang Chen ,  Feng-Jia Shiu ,  Chern-Yow Hsu

    IPC分类号： H01L45/00 ,  H01L21/321 ,  H01L21/311 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3105 ,  H01L27/24

    摘要： A method includes providing a substrate having a conductive column, a dielectric layer over the conductive column, and a plurality of sacrificial blocks over the dielectric layer, the plurality of sacrificial blocks surrounding the conductive column from a top view; depositing a sacrificial layer covering the plurality of sacrificial blocks, the sacrificial layer having a dip directly above the conductive column; depositing a hard mask layer over the sacrificial layer; removing a portion of the hard mask layer from a bottom of the dip; etching the bottom of the dip using the hard mask layer as an etching mask, thereby exposing a top surface of the conductive column; and forming a conductive material inside the dip, the conductive material being in physical contact with the top surface of the conductive column.

    Method of high-aspect ratio pattern formation with submicron pixel pitch
    5.
    发明授权
    Method of high-aspect ratio pattern formation with submicron pixel pitch 有权

    公开(公告)号：US10121811B1

    公开(公告)日：2018-11-06

    申请号：US15686916

    申请日：2017-08-25

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

    IPC分类号： H01L21/00 ,  H01L27/146

    摘要： Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.