公开(公告)号：US09034665B2

公开(公告)日：2015-05-19

申请号：US14051683

申请日：2013-10-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ching Huang ,  Tzu-Hsiang Chen ,  Chia-Hao Hsu ,  Chia-Chen Chen

IPC: G03F7/20 ,  G03F1/52 ,  H01L21/00 ,  G01N21/956

CPC classification number: G03F7/20 ,  G03F7/70191 ,  G03F7/70266 ,  G03F7/70291 ,  G03F7/70633 ,  G03F7/70783

Abstract: Some embodiments of the present disclosure relate to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern to a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector.

Abstract translation: 本公开的一些实施例涉及用于EUV图案化的工具配置和方法，其具有包括反射镜或掩模版的可变形反射表面。 辐射源提供从可变形反射表面反射的EUV辐射，以将掩模版图案转印到半导体工件。 测量工具测量形成在半导体工件的第一形状和标线图案的第二形状之间的残余矢量。 并且，基于残差向量来改变可变形反射表面的拓扑，以最小化残差向量的总大小。