公开(公告)号：US20230027789A1

公开(公告)日：2023-01-26

申请号：US17730797

申请日：2022-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Wei Yin ,  Yun-Chen Wu ,  Tzu-Wen Pan ,  Jih-Sheng Yang ,  Yu-Hsien Lin ,  Ryan Chia-Jen Chen

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/786 ,  H01L27/092 ,  H01L21/8238

Abstract: Improved gate structures, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; a gate electrode over the high-k dielectric layer; a conductive cap over and in contact with the high-k dielectric layer and the gate electrode, a top surface of the conductive cap being convex; and first gate spacers on opposite sides of the gate structure, the high-k dielectric layer and the conductive cap extending between opposite sidewalls of the first gate spacers.