公开(公告)号：US12132050B2

公开(公告)日：2024-10-29

申请号：US18526062

申请日：2023-12-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yu-Hsien Lin ,  Ming-Ching Chang ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Yi-Chun Chen

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/321

CPC classification number: H01L27/0886 ,  H01L21/3065 ,  H01L21/32133 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/7842 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/3212

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

公开(公告)号：US20240313091A1

公开(公告)日：2024-09-19

申请号：US18671151

申请日：2024-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yi-Chun Chen ,  Yu-Hsien Lin ,  Ming-Ching Chang

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/1054 ,  H01L29/785 ,  H01L21/845 ,  H01L27/1211

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

公开(公告)号：US20220384269A1

公开(公告)日：2022-12-01

申请号：US17818405

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yu-Hsien Lin ,  Ming-Ching Chang ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Yi-Chun Chen

IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

公开(公告)号：US10755936B2

公开(公告)日：2020-08-25

申请号：US16396429

申请日：2019-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC: H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US10325912B2

公开(公告)日：2019-06-18

申请号：US15797626

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Yi-Chun Chen ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yu-Hsien Lin ,  Ming-Ching Chang

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/308 ,  H01L21/321 ,  H01L21/762 ,  H01L27/088 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/8234

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

公开(公告)号：US20170309718A1

公开(公告)日：2017-10-26

申请号：US15642559

申请日：2017-07-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC: H01L29/423 ,  H01L21/308 ,  H01L21/306 ,  H01L21/283

CPC classification number: H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US11894370B2

公开(公告)日：2024-02-06

申请号：US17818405

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yu-Hsien Lin ,  Ming-Ching Chang ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Yi-Chun Chen

IPC: H01L21/76 ,  H01L29/06 ,  H01L27/088 ,  H01L27/02 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/3065 ,  H01L29/78 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/321 ,  H01L21/308 ,  H01L21/3105

CPC classification number: H01L27/0886 ,  H01L21/3065 ,  H01L21/32133 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/7842 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/3212

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

公开(公告)号：US11387105B2

公开(公告)日：2022-07-12

申请号：US17001382

申请日：2020-08-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC: H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US20210280695A1

公开(公告)日：2021-09-09

申请号：US17325622

申请日：2021-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yi-Chun Chen ,  Yu-Hsien Lin ,  Ming-Ching Chang

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8238 ,  H01L27/092

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

公开(公告)号：US11114549B2

公开(公告)日：2021-09-07

申请号：US15909800

申请日：2018-03-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ryan Chia-Jen Chen ,  Ming-Ching Chang ,  Yi-Chun Chen ,  Yu-Hsien Lin ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Cheng-Chung Chang ,  Shao-Hua Hsu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/84 ,  H01L27/12

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.