公开(公告)号：US20170279036A1

公开(公告)日：2017-09-28

申请号：US15080569

申请日：2016-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Mo ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Wu-An Weng ,  Chung-Yu Lin

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: MRAM devices and methods of forming the same are provided. One of the MRAM devices includes a dielectric layer, a resistance variable memory cell and a conductive layer. The dielectric layer is over a substrate and has an opening. The resistance variable memory cell is in the opening and includes a first electrode, a second electrode and a magnetic tunnel junction layer between the first electrode and the second electrode. The conductive layer fills a remaining portion of the opening and is electrically connected to one of the first electrode and the second electrode of the resistance variable memory cell.