公开(公告)号：US20170279036A1

公开(公告)日：2017-09-28

申请号：US15080569

申请日：2016-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Mo ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Wu-An Weng ,  Chung-Yu Lin

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: MRAM devices and methods of forming the same are provided. One of the MRAM devices includes a dielectric layer, a resistance variable memory cell and a conductive layer. The dielectric layer is over a substrate and has an opening. The resistance variable memory cell is in the opening and includes a first electrode, a second electrode and a magnetic tunnel junction layer between the first electrode and the second electrode. The conductive layer fills a remaining portion of the opening and is electrically connected to one of the first electrode and the second electrode of the resistance variable memory cell.

公开(公告)号：US11961745B2

公开(公告)日：2024-04-16

申请号：US17866908

申请日：2022-07-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Yu Lin ,  Shih-Chi Kuo ,  Chun-Chieh Mo

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/673 ,  H01L21/687

CPC classification number: H01L21/67057 ,  H01L21/02052 ,  H01L21/67086 ,  H01L21/6733 ,  H01L21/68742 ,  H01L21/68764

Abstract: The present disclosure describes an apparatus for processing one or more objects. The apparatus includes a carrier configured to hold the one or more objects, a tank filled with a processing agent and configured to receive the carrier, and a spinning portion configured to contact the one or more objects and to spin the one or more objects to disturb a flow field of the processing agent.

公开(公告)号：US11309347B2

公开(公告)日：2022-04-19

申请号：US16788145

申请日：2020-02-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0296

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US12074041B2

公开(公告)日：2024-08-27

申请号：US16413275

申请日：2019-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Yu Lin ,  Shih-Chi Kuo ,  Chun-Chieh Mo

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/673 ,  H01L21/687

CPC classification number: H01L21/67057 ,  H01L21/02052 ,  H01L21/67086 ,  H01L21/6733 ,  H01L21/68742 ,  H01L21/68764

Abstract: The present disclosure describes an apparatus for processing one or more objects. The apparatus includes a carrier configured to hold the one or more objects, a tank filled with a processing agent and configured to receive the carrier, and a spinning portion configured to contact the one or more objects and to spin the one or more objects to disturb a flow field of the processing agent.

公开(公告)号：US11923396B2

公开(公告)日：2024-03-05

申请号：US17723127

申请日：2022-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

CPC classification number: H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/1804 ,  H01L27/14612 ,  H01L27/14636 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/0324 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1832 ,  H01L31/1844

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US09972771B2

公开(公告)日：2018-05-15

申请号：US15080569

申请日：2016-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Mo ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Wu-An Weng ,  Chung-Yu Lin

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: MRAM devices and methods of forming the same are provided. One of the MRAM devices includes a dielectric layer, a resistance variable memory cell and a conductive layer. The dielectric layer is over a substrate and has an opening. The resistance variable memory cell is in the opening and includes a first electrode, a second electrode and a magnetic tunnel junction layer between the first electrode and the second electrode. The conductive layer fills a remaining portion of the opening and is electrically connected to one of the first electrode and the second electrode of the resistance variable memory cell.