公开(公告)号：US20220375875A1

公开(公告)日：2022-11-24

申请号：US17391341

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiun-Yu Chen ,  Chun-Lin Tsai ,  Yun-Hsiang Wang ,  Chia-Hsun Wu ,  Jiun-Lei Yu ,  Po-Chih Chen

IPC: H01L23/00 ,  H01L23/58 ,  H01L25/065 ,  H01L29/06

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

公开(公告)号：US20210066483A1

公开(公告)日：2021-03-04

申请号：US16558518

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Cheng Lin ,  Chen-Bau Wu ,  Chun Lin Tsai ,  Haw-Yun Wu ,  Liang-Yu Su ,  Yun-Hsiang Wang

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/47 ,  H01L21/285 ,  H01L29/66

Abstract: In some embodiments, the present disclosure relates to a high voltage device that includes a substrate comprising a first semiconductor material. A channel layer that comprises a second semiconductor material is arranged over the substrate. An active layer that comprises a third semiconductor material is arranged over the channel layer. Over the active layer is a source contact spaced apart from a drain contact. A gate structure is arranged laterally between the source and drain contacts and over the active layer to define a high electron mobility transistor (HEMT) device. Between the gate structure and the source contact is a cap structure, which is coupled to the source contact and laterally spaced from the gate structure. The cap structure and a gate electrode of the gate structure comprise a same material.