公开(公告)号：US11908829B2

公开(公告)日：2024-02-20

申请号：US17350856

申请日：2021-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Te Huang ,  Hong-Wei Chan ,  Yung-Shih Cheng

IPC: H01L23/00 ,  H01L23/528

CPC classification number: H01L24/83 ,  H01L23/5283 ,  H01L24/27 ,  H01L24/32 ,  H01L2224/2784 ,  H01L2224/27452 ,  H01L2224/32225 ,  H01L2224/83005 ,  H01L2224/83201 ,  H01L2924/37001

Abstract: In an embodiment, a method includes performing a first plasma deposition to form a buffer layer over a first side of a first integrated circuit device, the first integrated circuit device comprising a first substrate and a first interconnect structure; performing a second plasma deposition to form a first bonding layer over the buffer layer, wherein a plasma power applied during the second plasma deposition is greater than a plasma power applied during the first plasma deposition; planarizing the first bonding layer; forming a second bonding layer over a second substrate; pressing the second bonding layer onto the first bonding layer; and removing the first substrate.

公开(公告)号：US11764143B2

公开(公告)日：2023-09-19

申请号：US16900289

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Te Huang ,  Yung-Shih Cheng

IPC: H01L23/522 ,  H01L23/64 ,  H01L21/768 ,  H01L21/308 ,  H01L49/02

CPC classification number: H01L23/5222 ,  H01L21/308 ,  H01L21/76897 ,  H01L23/642 ,  H01L28/60

Abstract: A method includes forming a first electrode layer having a first opening, with the first opening having a first lateral dimension, forming a first capacitor insulator over the first electrode layer, and forming a second electrode layer over the first capacitor insulator, with the second electrode layer having a second opening. The first opening is directly underlying the second opening. The second opening has a second lateral dimension greater than the first lateral dimension. The method further includes depositing a dielectric layer over the second electrode layer, and forming a contact opening, which comprises a first portion including the first opening, and a second portion including the second opening. A conductive plug is formed in the contact opening.

公开(公告)号：US20220328398A1

公开(公告)日：2022-10-13

申请号：US17809938

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Te Huang ,  Yung-Shih Cheng

IPC: H01L23/522 ,  H01L23/64 ,  H01L49/02 ,  H01L21/768 ,  H01L21/308

Abstract: A method includes forming a first electrode layer having a first opening, with the first opening having a first lateral dimension, forming a first capacitor insulator over the first electrode layer, and forming a second electrode layer over the first capacitor insulator, with the second electrode layer having a second opening. The first opening is directly underlying the second opening. The second opening has a second lateral dimension greater than the first lateral dimension. The method further includes depositing a dielectric layer over the second electrode layer, and forming a contact opening, which comprises a first portion including the first opening, and a second portion including the second opening. A conductive plug is formed in the contact opening.

公开(公告)号：US20210391248A1

公开(公告)日：2021-12-16

申请号：US16900289

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Te Huang ,  Yung-Shih Cheng

IPC: H01L23/522 ,  H01L23/64 ,  H01L21/308 ,  H01L21/768 ,  H01L49/02

Abstract: A method includes forming a first electrode layer having a first opening, with the first opening having a first lateral dimension, forming a first capacitor insulator over the first electrode layer, and forming a second electrode layer over the first capacitor insulator, with the second electrode layer having a second opening. The first opening is directly underlying the second opening. The second opening has a second lateral dimension greater than the first lateral dimension. The method further includes depositing a dielectric layer over the second electrode layer, and forming a contact opening, which comprises a first portion including the first opening, and a second portion including the second opening. A conductive plug is formed in the contact opening.