公开(公告)号：US20240347404A1

公开(公告)日：2024-10-17

申请号：US18610114

申请日：2024-03-19

Applicant: Adeia Semiconductor Technologies LLC

Inventor： Rajesh Katkar

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10

CPC classification number: H01L23/3107 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/566 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/94 ,  H01L24/97 ,  H01L25/10 ,  H01L21/4857 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83005 ,  H01L2224/92242 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/19107

Abstract: A microelectronic assembly having a first side and a second side opposite therefrom is disclosed. The microelectronic assembly may include a microelectronic element having a first face, a second face opposite the first face, a plurality of sidewalls each extending between the first and second faces, and a plurality of element contacts. The microelectronic assembly may also include an encapsulation adjacent the sidewalls of the microelectronic element. The microelectronic assembly may include electrically conductive connector elements each having a first end, a second end remote from the first end, and an edge surface extending between the first and second ends, wherein one of the first end or the second end of each connector element is adjacent the first side of the package. The microelectronic assembly may include a redistribution structure having terminals, the redistribution structure adjacent the second side of the package, the terminals being electrically coupled with the connector elements.

公开(公告)号：US12106995B2

公开(公告)日：2024-10-01

申请号：US16830938

申请日：2020-03-26

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zheng Wu ,  Shao-Ying Ting ,  Chia-En Lee ,  Chen-Ke Hsu

IPC: H01L21/683 ,  H01L23/00 ,  H01L33/00

CPC classification number: H01L21/6835 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0093 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/2919 ,  H01L2224/83005

Abstract: A method for transferring a micro semiconductor element includes the following steps. A substrate, a bonding layer disposed on the substrate, and a supporting member disposed on the bonding layer opposite to the substrate are provided. The supporting member is bonded to a micro semiconductor element for supporting the same. A through hole is provided to extend through the substrate, the bonding layer, and the supporting member so as to forma transfer structure. A separation force is applied via the through hole to separate the micro semiconductor element from the supporting member.

公开(公告)号：US20240297432A1

公开(公告)日：2024-09-05

申请号：US18647106

申请日：2024-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Chuang ,  Po-Hao Tsai ,  Shin-Puu Jeng

IPC: H01Q1/22 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/82 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H01L25/065 ,  H01Q9/04 ,  H01Q19/10

CPC classification number: H01Q1/2283 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01Q9/0407 ,  H01Q19/10 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/82 ,  H01L24/97 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2223/6677 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/92225 ,  H01L2224/95001 ,  H01L2924/1421

Abstract: A method includes bonding an antenna substrate to a redistribution structure. The antenna substrate has a first part of a first antenna, and the redistribution structure has a second part of the first antenna. The method further includes encapsulating the antenna substrate in an encapsulant, and bonding a package component to the redistribution structure. The redistribution structure includes a third part of a second antenna, and the package component includes a fourth part of the second antenna.

公开(公告)号：US12080615B2

公开(公告)日：2024-09-03

申请号：US18068010

申请日：2022-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Kuo-Chung Yee ,  Hao-Yi Tsai ,  Tin-Hao Kuo

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L21/56

CPC classification number: H01L23/3114 ,  H01L21/486 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L21/561 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/49816 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/214 ,  H01L2224/24137 ,  H01L2224/24147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73217 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/9222 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2224/94 ,  H01L2224/214 ,  H01L2224/94 ,  H01L2224/83 ,  H01L2224/94 ,  H01L2224/19 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/19 ,  H01L2224/83005

Abstract: A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

公开(公告)号：US12051616B2

公开(公告)日：2024-07-30

申请号：US18298780

申请日：2023-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Der-Chyang Yeh

IPC: H01L21/768 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/075 ,  H01L25/10 ,  H01L25/11 ,  H05K3/42 ,  H05K3/46

CPC classification number: H01L21/768 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/19 ,  H01L21/568 ,  H01L23/49816 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/0753 ,  H01L25/105 ,  H01L25/115 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/13099 ,  H01L2224/14135 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/92224 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K3/429 ,  H05K3/4688 ,  H05K2201/09536 ,  H05K2203/1316

Abstract: Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.

公开(公告)号：US12051611B2

公开(公告)日：2024-07-30

申请号：US17328782

申请日：2021-05-24

Applicant: Amkor Technology Singapore Holding Pte. Ltd.

Inventor： Roger St. Amand ,  Young Do Kweon

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L21/6835 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/97 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83203 ,  H01L2224/92125 ,  H01L2224/95001

Abstract: An electronic device structure and a method for making an electronic device. As non-limiting examples, various aspects of this disclosure provide a method of manufacturing an electronic device that comprises the utilization of a carrier assisted substrate, and an electronic device manufactured thereby.

公开(公告)号：US20240088123A1

公开(公告)日：2024-03-14

申请号：US18518187

申请日：2023-11-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Yung-Chi Lin ,  Wen-Chih Chiou

IPC: H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L25/50 ,  H01L24/33 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/08146 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33519 ,  H01L2224/80006 ,  H01L2224/8083 ,  H01L2224/83005 ,  H01L2224/8383 ,  H01L2224/83896 ,  H01L2224/92142 ,  H01L2225/06541 ,  H01L2225/06589

Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

公开(公告)号：US20240072027A1

公开(公告)日：2024-02-29

申请号：US18453190

申请日：2023-08-21

Applicant: Samsung Display Co., LTD.

Inventor： Jeong Won HAN ,  Won Hee OH

IPC: H01L25/16 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L21/67144 ,  H01L21/6835 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/95 ,  H01L24/05 ,  H01L24/08 ,  H01L2221/68381 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05686 ,  H01L2224/05693 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80024 ,  H01L2224/80224 ,  H01L2224/80805 ,  H01L2224/81005 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/95001 ,  H01L2924/01006 ,  H01L2924/0106 ,  H01L2924/0549 ,  H01L2924/12041

Abstract: The present disclosure may provide a method of fabricating a display panel, the method includes picking up, by a transfer head, a transfer member located on a support member, detaching a light-emitting element from a donor substrate by attaching the transfer member picked up by the transfer head to the light-emitting element on the donor substrate to lift the light-emitting element, aligning, by the transfer head, the light-emitting element attached to the transfer member on a circuit board, and detaching the transfer member from the transfer head, bonding the light-emitting element attached to the transfer member onto the circuit board and separating, by the transfer head, the transfer member from the light-emitting element bonded to the circuit board to remove the transfer member.

公开(公告)号：US11916052B2

公开(公告)日：2024-02-27

申请号：US17280868

申请日：2020-11-20

Applicant: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

Inventor： Li Hu ,  Bingkun Yin

IPC: H01L25/16 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L33/56 ,  H10K50/84 ,  H10K102/00

CPC classification number: H01L25/167 ,  H01L23/5386 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0655 ,  H01L25/50 ,  H01L33/56 ,  H10K50/841 ,  H01L24/29 ,  H01L2224/2929 ,  H01L2224/32137 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/831 ,  H01L2224/83005 ,  H01L2224/83951 ,  H01L2224/95001 ,  H01L2924/0715 ,  H10K2102/311

Abstract: A stretchable display module and a manufacturing method thereof are provided. The stretchable display module includes a display layer including a plurality of display islands arranged and spaced apart from each other, wherein two of the adjacent display islands are electrically connected by a connecting wire; a transparent adhesive layer including a filling adhesive layer filled in a spacing region between the display islands, a first adhesive layer disposed on a surface of the display layer opposite an emitting direction of the display layer, and a second adhesive layer disposed on a surface of the display layer in the emitting direction.

公开(公告)号：US11908787B2

公开(公告)日：2024-02-20

申请号：US17676826

申请日：2022-02-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chuei-Tang Wang ,  Chun-Lin Lu ,  Kai-Chiang Wu

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/66 ,  H01L21/56 ,  H01L21/683 ,  H01L21/48 ,  H01Q1/22 ,  H01L23/31 ,  H01Q9/16 ,  H01Q9/04

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/66 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/16 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2223/6677 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2924/3511

Abstract: A package structure includes a first and a second conductive feature structures, a die, an insulator, an encapsulant, an adhesive layer, and a first through via. The die is located between the first conductive feature structure and the second conductive feature structure. The die is electrically connected to the second conductive feature structure. The insulator is disposed between the die and the first conductive feature structure. The insulator has a bottom surface in physical contact with a polymer layer of the first conductive feature structure. The encapsulant is located between the first conductive feature structure and the second conductive feature structure. The encapsulant is disposed on the insulator and laterally encapsulates the die and the insulator. The adhesive layer is disposed between the die and the insulator. The first through via extends through the encapsulant to connect to the first conductive feature structure and the second conductive feature structure.