公开(公告)号：US20140246708A1

公开(公告)日：2014-09-04

申请号：US13782051

申请日：2013-03-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shyh-Wei Cheng ,  Jui-Chun Weng ,  Hsi-Cheng Hsu ,  Chih-Yu Wang ,  Jung-Kuo Tu ,  Che-Jung Chu ,  Yu-Ting Hsu

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81C1/00277 ,  B81B7/0041 ,  B81B7/02 ,  B81C1/0023 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C3/001 ,  B81C2203/0118

摘要： An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.

摘要翻译： 一种集成电路器件包括：第一层，其包括至少两个部分空穴，中间层与第一层结合，形成以支持至少两个微机电系统（MEMS）器件的中间层，以及与中间体结合的第二层 层，所述第二层包括至少两个部分空腔，以通过所述中间层完成所述第一层的所述至少两个部分空腔，以形成至少两个密封的完整空腔。 至少两个完整的腔体内部具有不同的压力。

公开(公告)号：US12130551B2

公开(公告)日：2024-10-29

申请号：US18335232

申请日：2023-06-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Hao Lee ,  You-Cheng Jhang ,  Han-Zong Pan ,  Jui-Chun Weng ,  Chiu-Hua Chung ,  Sheng-Yuan Lin ,  Hsin-Yu Chen

IPC分类号： G03F1/64 ,  G03F1/62 ,  G03F7/00

CPC分类号： G03F1/64 ,  G03F1/62 ,  G03F7/70983

摘要： A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

公开(公告)号：US11726401B2

公开(公告)日：2023-08-15

申请号：US17815328

申请日：2022-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Hao Lee ,  You-Cheng Jhang ,  Han-Zong Pan ,  Jui-Chun Weng ,  Chiu-Hua Chung ,  Sheng-Yuan Lin ,  Hsin-Yu Chen

IPC分类号： G03F1/64 ,  G03F1/62 ,  G03F7/20 ,  G03F7/00

CPC分类号： G03F1/64 ,  G03F1/62 ,  G03F7/70983

摘要： A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.