摘要:
An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.
摘要:
In each pixel of a MOS-type solid-state imaging device, a plurality of first signals and one or more second signals are accumulated in a plurality of storage areas in a storage unit during driving. Here, each of the plurality of first signals corresponds to a light receiving signal (light receiving signal on which noise is superimposed) which is transmitted from a light receiving unit each time a switching unit is in a closed state, and each of the one or more second signals is a signal (noise such as dark-current noise, fixed pattern noise, and the like) as a voltage of a signal readout path when the switching unit is in an open state. Also, in the solid-state imaging device of the present invention, each of the one or more second signals in the storage unit of each image pixel is in a state of being physically or temporally separated from each of the plurality of first signals.
摘要:
A noise reduction circuit receives, as an input signal, a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals; a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit; and an electric charge accumulation circuit section or a voltage adding circuit. The electric charge accumulation circuit section accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output the resultant electric charge. The voltage adding circuit adds, a predetermined number of times, the voltage difference detected by the voltage difference detection circuit.
摘要:
Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.
摘要:
A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.
摘要:
A noise reduction circuit outputs a signal corresponding to a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals at different timings; and a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit. The noise reduction circuit accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output a resultant electric charge.
摘要:
A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.
摘要:
A solid-state imaging device includes: a plurality of pixels arranged in a matrix, the matrix defining columns of the pixels, and each of the pixels outputting an analog signal by performing photoelectric conversion; an analog-digital converter provided for each of columns which sequentially converts a plurality of analog signals outputted from the pixels in a column into a plurality of digital signals; a memory circuit provided for each column which includes memories and performs, in parallel, a process of storing a one of the digital signals in one of the memories and a process of outputting another of the digital signals previously stored in another of the memories; and data buses connected to the memory in each column.
摘要:
A solid-state imaging device for high-speed photography includes an imaging element area in which a plurality of pixel portions having photodetectors for photography are disposed in a matrix form. The solid-state imaging device generates image data by capturing pixel information obtained from the photodetectors for photography. The solid-state imaging device for high-speed photography further includes: a change detection element that detects a change in an amount of incident light, which is disposed in the imaging element area or at a predetermined position surrounding the imaging element area; and a controller that controls starting or stopping of capturing of pixel information obtained from the photodetectors for photography in accordance with a trigger signal based on a detection signal output from the change detection element. Since the photographing can be started in accordance with the generation of a phenomenon, the phenomenon can be recorded with reliability, and an excellent power-saving capability also can be provided.
摘要:
Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.