公开(公告)号：US08023214B2

公开(公告)日：2011-09-20

申请号：US12585259

申请日：2009-09-10

申请人： Takumi Yanagisawa ,  Satoshi Miura

发明人： Takumi Yanagisawa ,  Satoshi Miura

IPC分类号： G11B27/36

CPC分类号： G11B20/10009 ,  G11B5/012 ,  G11B20/10083 ,  G11B2005/0002 ,  G11B2220/2516

摘要： A reproducing method of reproducing magnetic information written in each of bits of a recording medium using a magnetic head having a reading element configured to measure external magnetic field intensity includes moving, measuring and specifying steps. In the moving step, the magnetic head moves to a position where the reading element covers two bits, one bit having known magnetic information, the other bit being adjacent to the one bit and having unknown magnetic information. In the measuring step, the reading element measures magnetic field intensity coming from the recording medium. In the specifying step, magnetic information of the bit having the unknown magnetic information is specified based on the magnetic field intensity measured in the measuring step and magnetic information of the bit having the known magnetic information.

摘要翻译： 使用具有用于测量外部磁场强度的读取元件的磁头来再现记录在记录介质的每个比特中的磁信息的再现方法包括移动，测量和指定步骤。 在移动步骤中，磁头移动到读取元件覆盖两位的位置，一位具有已知的磁信息，另一位与该位相邻并具有未知的磁信息。 在测量步骤中，读取元件测量来自记录介质的磁场强度。 在指定步骤中，基于在测量步骤中测量的磁场强度和具有已知磁信息的位的磁信息来指定具有未知磁信息的位的磁信息。

公开(公告)号：US08018693B2

公开(公告)日：2011-09-13

申请号：US12320177

申请日：2009-01-21

申请人： Takumi Yanagisawa

发明人： Takumi Yanagisawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/40

摘要： A magnetic detector includes a magnetoresistive element and an impact sensor. The magnetoresistive element has a plurality of element-constituent layers that are stacked and include a free layer having a magnetization direction that changes in response to a magnetic field to be detected by the magnetic detector. The impact sensor has a plurality of sensor-constituent layers that are made of materials the same as those of the element-constituent layers and stacked in the same order as the element-constituent layers. The plurality of sensor-constituent layers include an impact detecting layer corresponding to the free layer and having a magnetization direction that changes by an inverse magnetostrictive effect in response to distortion created in the impact detecting layer by an impact received by the magnetic detector. The impact detecting layer exhibits a greater amount of change in magnetization direction when the magnetic detector receives an impact, compared with the free layer.

摘要翻译： 磁检测器包括磁阻元件和冲击传感器。 磁阻元件具有堆叠的多个元件构成层，并且包括具有响应于由磁检测器检测的磁场而变化的磁化方向的自由层。 冲击传感器具有多个传感器组成层，其由与元件组成层相同的材料制成并且以与元件组成层相同的顺序层叠。 多个传感器构成层包括对应于自由层的冲击检测层，并且具有由响应于由磁检测器接收的冲击在冲击检测层中产生的失真的反向磁致伸缩效应而变化的磁化方向。 与自由层相比，当磁性检测器接收到冲击时，冲击检测层表现出较大的磁化方向变化量。

公开(公告)号：US20100171494A1

公开(公告)日：2010-07-08

申请号：US12349891

申请日：2009-01-07

申请人： Takumi Yanagisawa

发明人： Takumi Yanagisawa

IPC分类号： G01R33/02 ,  G01N37/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1207

摘要： A method for testing an MR element includes a step of obtaining a ferromagnetic resonance frequency f0 of the MR element to be tested by applying an external magnetic field in a track-width direction to the MR element, a step of calculating a stiffness magnetic field Hstiff from the obtained ferromagnetic resonance frequency f0 using a predetermined formula, a step of obtaining a relationship of a stiffness magnetic field Hstiff with respect to an external magnetic field applied in the track-width direction from the applied external magnetic field and the calculated stiffness magnetic field Hstiff, a step of obtaining a uniaxial anisotropic magnetic field Hk of a free layer of the MR element from the obtained relationship of the stiffness magnetic field Hstiff with respect to the external magnetic field applied, and a step of judging whether the MR element is good product or not by comparing the obtained uniaxial anisotropic magnetic field Hk with a predetermined threshold.

摘要翻译： 用于测试MR元件的方法包括通过向MR元件施加轨道宽度方向的外部磁场来获得要测试的MR元件的铁磁共振频率f0的步骤，计算刚度磁场Hstiff 根据所得到的铁磁共振频率f0，使用规定的公式，求出刚度磁场Hstiff相对于从施加的外部磁场施加在轨道宽度方向上的外部磁场与计算出的刚度磁场的关系的步骤 Hstiff，根据获得的刚度磁场Hstiff的相对于所施加的外部磁场的关系，获得MR元件的自由层的单轴各向异性磁场Hk的步骤，以及判断MR元件是否良好的步骤 通过将获得的单轴向各向异性磁场Hk与预定阈值进行比较来产生。

公开(公告)号：US08552328B2

公开(公告)日：2013-10-08

申请号：US11966025

申请日：2007-12-28

申请人： Takumi Yanagisawa ,  Yosuke Antoku ,  Yoshikazu Sawada

发明人： Takumi Yanagisawa ,  Yosuke Antoku ,  Yoshikazu Sawada

IPC分类号： G11B5/37

CPC分类号： G11B5/40 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B2005/0016 ,  G11B2005/3996

摘要： The invention provides a method for fixing up the deterioration of a magneto-resistive effect device. A hard disk system is provided in it with a head heating means for heating a thin-film magnetic head, and by that head heating means, a defective site of the magneto-resistive effect device, which occurs as the hard disk system is in operation and is confined in a quasi-stable state, is fixed up in such a way as to return back to its own normal stable state. Thus, the deteriorated site of the magneto-resistive effect device (reproducing device) in the thin-film magnetic head, which is caused by the so-called thermal asperity as the hard disk system is in operation, is fixed up while it remains built in the hard disk system, i.e., without dismantling the hard disk system.

摘要翻译： 本发明提供了一种用于固定磁阻效应装置的劣化的方法。 在其中设置有用于加热薄膜磁头的磁头加热装置和由该磁头加热装置在磁盘系统运行时发生的磁阻效应装置的缺陷部位的硬盘系统 并且被限制在准稳定状态，被固定为使其返回到其自己的正常稳定状态。 因此，由硬盘系统所谓的热不均匀性引起的薄膜磁头中的磁阻效应器件（再现装置）的劣化位置在其保持构建的同时被固定 在硬盘系统中，即不拆卸硬盘系统。

公开(公告)号：US07978443B2

公开(公告)日：2011-07-12

申请号：US11944731

申请日：2007-11-26

申请人： Satoshi Miura ,  Takumi Yanagisawa

发明人： Satoshi Miura ,  Takumi Yanagisawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/12 ,  Y10T428/1114

摘要： A TMR element includes a lower magnetic layer, an upper magnetic layer, and a tunnel barrier layer of crystalline insulation material sandwiched between the lower magnetic layer and the upper magnetic layer. The lower magnetic layer includes a first magnetic layer and a second magnetic layer sandwiched between the first magnetic layer and the tunnel barrier layer. The second magnetic layer is formed from a magnetic material containing at least one of Fe, Co and Ni.

摘要翻译： TMR元件包括夹在下磁性层和上磁性层之间的结晶绝缘材料的下磁性层，上磁性层和隧道势垒层。 下磁性层包括夹在第一磁性层和隧道势垒层之间的第一磁性层和第二磁性层。 第二磁性层由含有Fe，Co和Ni中的至少一种的磁性材料形成。

公开(公告)号：US07961441B2

公开(公告)日：2011-06-14

申请号：US12020773

申请日：2008-01-28

申请人： Keita Kawamori ,  Satoshi Miura ,  Takumi Yanagisawa

发明人： Keita Kawamori ,  Satoshi Miura ,  Takumi Yanagisawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3967 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/30 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121

摘要： The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via an intermediate layer with a thickness of at least 2 nm, and a pinned magnetic layer laminated on the antiferromagnetic layer.

摘要翻译： 根据本发明的交换耦合膜包括缓冲层，该缓冲层包括层叠体，其中非晶层和铪层依次层叠，反铁磁层经由中间层层叠在缓冲层的铪层上，厚度为 至少2nm，以及层叠在反铁磁性层上的钉扎磁性层。

公开(公告)号：US07940042B2

公开(公告)日：2011-05-10

申请号：US12349891

申请日：2009-01-07

申请人： Takumi Yanagisawa

发明人： Takumi Yanagisawa

IPC分类号： G01R33/12 ,  G01R31/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1207

摘要： A method for testing an MR element includes a step of obtaining a ferromagnetic resonance frequency f0 of the MR element to be tested by applying an external magnetic field in a track-width direction to the MR element, a step of calculating a stiffness magnetic field Hstiff from the obtained ferromagnetic resonance frequency f0 using a predetermined formula, a step of obtaining a relationship of a stiffness magnetic field Hstiff with respect to an external magnetic field applied in the track-width direction from the applied external magnetic field and the calculated stiffness magnetic field Hstiff, a step of obtaining a uniaxial anisotropic magnetic field Hk of a free layer of the MR element from the obtained relationship of the stiffness magnetic field Hstiff with respect to the external magnetic field applied, and a step of judging whether the MR element is good product or not by comparing the obtained uniaxial anisotropic magnetic field Hk with a predetermined threshold.

摘要翻译： 用于测试MR元件的方法包括通过向MR元件施加轨道宽度方向的外部磁场来获得要测试的MR元件的铁磁共振频率f0的步骤，计算刚度磁场Hstiff 根据所得到的铁磁共振频率f0，使用规定的公式，求出刚度磁场Hstiff相对于从施加的外部磁场施加在轨道宽度方向上的外部磁场与计算出的刚度磁场的关系的步骤 Hstiff，根据获得的刚度磁场Hstiff的相对于所施加的外部磁场的关系，获得MR元件的自由层的单轴各向异性磁场Hk的步骤，以及判断MR元件是否良好的步骤 通过将获得的单轴向各向异性磁场Hk与预定阈值进行比较来产生。

公开(公告)号：US20110058270A1

公开(公告)日：2011-03-10

申请号：US12585259

申请日：2009-09-10

申请人： Takumi Yanagisawa ,  Satoshi Miura

发明人： Takumi Yanagisawa ,  Satoshi Miura

IPC分类号： G11B27/36 ,  G11B21/02

CPC分类号： G11B20/10009 ,  G11B5/012 ,  G11B20/10083 ,  G11B2005/0002 ,  G11B2220/2516

摘要： A reproducing method of reproducing magnetic information written in each of bits of a recording medium using a magnetic head having a reading element configured to measure external magnetic field intensity includes moving, measuring and specifying steps. In the moving step, the magnetic head moves to a position where the reading element covers two bits, one bit having known magnetic information, the other bit being adjacent to the one bit and having unknown magnetic information. In the measuring step, the reading element measures magnetic field intensity coming from the recording medium. In the specifying step, magnetic information of the bit having the unknown magnetic information is specified based on the magnetic field intensity measured in the measuring step and magnetic information of the bit having the known magnetic information.

摘要翻译： 使用具有用于测量外部磁场强度的读取元件的磁头来再现记录在记录介质的每个比特中的磁信息的再现方法包括移动，测量和指定步骤。 在移动步骤中，磁头移动到读取元件覆盖两位的位置，一位具有已知的磁信息，另一位与该位相邻并具有未知的磁信息。 在测量步骤中，读取元件测量来自记录介质的磁场强度。 在指定步骤中，基于在测量步骤中测量的磁场强度和具有已知磁信息的位的磁信息来指定具有未知磁信息的位的磁信息。

公开(公告)号：US20100182723A1

公开(公告)日：2010-07-22

申请号：US12320177

申请日：2009-01-21

申请人： Takumi Yanagisawa

发明人： Takumi Yanagisawa

IPC分类号： G11B5/127 ,  G01R33/02

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/40

摘要： A magnetic detector includes a magnetoresistive element and an impact sensor. The magnetoresistive element has a plurality of element-constituent layers that are stacked and include a free layer having a magnetization direction that changes in response to a magnetic field to be detected by the magnetic detector. The impact sensor has a plurality of sensor-constituent layers that are made of materials the same as those of the element-constituent layers and stacked in the same order as the element-constituent layers. The plurality of sensor-constituent layers include an impact detecting layer corresponding to the free layer and having a magnetization direction that changes by an inverse magnetostrictive effect in response to distortion created in the impact detecting layer by an impact received by the magnetic detector. The impact detecting layer exhibits a greater amount of change in magnetization direction when the magnetic detector receives an impact, compared with the free layer.

摘要翻译： 磁检测器包括磁阻元件和冲击传感器。 磁阻元件具有堆叠的多个元件构成层，并且包括具有响应于由磁检测器检测的磁场而变化的磁化方向的自由层。 冲击传感器具有多个传感器组成层，其由与元件组成层相同的材料制成并且以与元件组成层相同的顺序层叠。 多个传感器构成层包括对应于自由层的冲击检测层，并且具有由响应于由磁检测器接收的冲击在冲击检测层中产生的失真的反向磁致伸缩效应而变化的磁化方向。 与自由层相比，当磁性检测器接收到冲击时，冲击检测层表现出较大的磁化方向变化量。

公开(公告)号：US08462467B2

公开(公告)日：2013-06-11

申请号：US12900879

申请日：2010-10-08

申请人： Takumi Yanagisawa ,  Yasushi Nishioka ,  Takahiko Machita ,  Satoshi Miura ,  Takayasu Kanaya ,  Kenzo Makino ,  Yoshikazu Sawada ,  Takekazu Yamane ,  Naomichi Degawa ,  Kosuke Tanaka ,  Soji Koide ,  Daisuke Miyauchi

发明人： Takumi Yanagisawa ,  Yasushi Nishioka ,  Takahiko Machita ,  Satoshi Miura ,  Takayasu Kanaya ,  Kenzo Makino ,  Yoshikazu Sawada ,  Takekazu Yamane ,  Naomichi Degawa ,  Kosuke Tanaka ,  Soji Koide ,  Daisuke Miyauchi

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.

摘要翻译： 薄膜磁头包括：电阻效应膜，其电阻根据外部磁场而变化; 一对屏蔽，以与MR膜的膜表面正交的方向夹持MR膜的方式设置在两侧; 各向异性提供层，其向所述一对屏蔽件的第一屏蔽提供交换各向异性，以便在所需方向上磁化所述第一屏蔽，并且相对于所述第一屏蔽设置在与所述MR膜相反的一侧上; 以及侧面屏蔽，其设置在MR膜的轨道宽度方向的两侧，并且包括与第一屏蔽件磁性连接的软磁性层。