公开(公告)号：US07034451B2

公开(公告)日：2006-04-25

申请号：US10644708

申请日：2003-08-20

申请人： Shigeru Senbonmatsu

发明人： Shigeru Senbonmatsu

IPC分类号： H05B33/00

CPC分类号： H01L51/5281 ,  H01L2251/5323

摘要： Provided is a technique for producing a double-sided display device using a self light emitting display element in which a thickness thereof is small, a contrast is high, and a privacy is kept. A first polarization layer and a second polarization layer are provided so as to sandwich the self light emitting display element and it is set such that the transmission axis of the first polarization layer and the transmission axis of the second polarization layer are orthogonal to each other.

摘要翻译： 本发明提供一种使用其厚度小，对比度高，保护隐私的自发光显示元件的双面显示装置的制造技术。 设置第一偏振层和第二偏振层以夹住自发光显示元件，并且设置为使得第一偏振层的透射轴和第二偏振层的透射轴彼此正交。

公开(公告)号：US5459335A

公开(公告)日：1995-10-17

申请号：US106408

申请日：1993-08-13

申请人： Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Tsuneo Yamazaki ,  Tadao Iwaki ,  Ryuichi Takano

发明人： Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Tsuneo Yamazaki ,  Tadao Iwaki ,  Ryuichi Takano

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12 ,  H01L23/14 ,  H01L23/15

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.

摘要翻译： 用于显示装置的薄膜半导体衬底包括形成在单晶半导体衬底上的薄膜半导体电路层和形成在薄膜半导体电路层上的支撑衬底。 在绝缘层和支撑基板之间设置由含氟环氧树脂系列粘合剂制成的粘合剂层。 当去除单晶半导体衬底时，薄膜半导体衬底的制造中的成品率大大提高。

公开(公告)号：US5646432A

公开(公告)日：1997-07-08

申请号：US57987

申请日：1993-05-05

申请人： Tadao Iwaki ,  Tsuneo Yamazaki ,  Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Ryuichi Takano

发明人： Tadao Iwaki ,  Tsuneo Yamazaki ,  Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Ryuichi Takano

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G06E3/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/01 ,  H01L23/48 ,  H01L29/00 ,  H01L31/032

CPC分类号： G02F1/13454 ,  G06E3/003 ,  H01L21/2007 ,  H01L27/1203 ,  G02F2202/105

摘要： A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.

摘要翻译： 提供了半导体衬底，其具有半导体绝缘体结构，但是其中可以形成具有等于或者比具有大体积单晶硅晶片形成的硅集成电路更高密度的电特性和微结构的薄膜集成电路。 半导体衬底具有由夹在热氧化硅膜和氧化硅或氮化硅膜之间的顺序层叠的单晶硅薄膜，元件平滑层，氟 - 环氧树脂粘合剂层和 支撑衬底。 单晶硅薄膜可以具有类似于大块单晶硅的亚微米几何形状的集成电路器件。 可以使用透明玻璃或块状单晶硅晶片作为支撑基板。 因此，半导体薄膜可以集成高精度，致密和紧凑的半导体集成电路或半导体光学元件。 半导体薄膜元件具有1亿像素以上的透明光检测区域或光调制区域。