公开(公告)号：US5459335A

公开(公告)日：1995-10-17

申请号：US106408

申请日：1993-08-13

申请人： Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Tsuneo Yamazaki ,  Tadao Iwaki ,  Ryuichi Takano

发明人： Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Tsuneo Yamazaki ,  Tadao Iwaki ,  Ryuichi Takano

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12 ,  H01L23/14 ,  H01L23/15

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.

摘要翻译： 用于显示装置的薄膜半导体衬底包括形成在单晶半导体衬底上的薄膜半导体电路层和形成在薄膜半导体电路层上的支撑衬底。 在绝缘层和支撑基板之间设置由含氟环氧树脂系列粘合剂制成的粘合剂层。 当去除单晶半导体衬底时，薄膜半导体衬底的制造中的成品率大大提高。

公开(公告)号：US5646432A

公开(公告)日：1997-07-08

申请号：US57987

申请日：1993-05-05

申请人： Tadao Iwaki ,  Tsuneo Yamazaki ,  Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Ryuichi Takano

发明人： Tadao Iwaki ,  Tsuneo Yamazaki ,  Katsuki Matsushita ,  Shigeru Senbonmatsu ,  Ryuichi Takano

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G06E3/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/01 ,  H01L23/48 ,  H01L29/00 ,  H01L31/032

CPC分类号： G02F1/13454 ,  G06E3/003 ,  H01L21/2007 ,  H01L27/1203 ,  G02F2202/105

摘要： A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.

摘要翻译： 提供了半导体衬底，其具有半导体绝缘体结构，但是其中可以形成具有等于或者比具有大体积单晶硅晶片形成的硅集成电路更高密度的电特性和微结构的薄膜集成电路。 半导体衬底具有由夹在热氧化硅膜和氧化硅或氮化硅膜之间的顺序层叠的单晶硅薄膜，元件平滑层，氟 - 环氧树脂粘合剂层和 支撑衬底。 单晶硅薄膜可以具有类似于大块单晶硅的亚微米几何形状的集成电路器件。 可以使用透明玻璃或块状单晶硅晶片作为支撑基板。 因此，半导体薄膜可以集成高精度，致密和紧凑的半导体集成电路或半导体光学元件。 半导体薄膜元件具有1亿像素以上的透明光检测区域或光调制区域。

公开(公告)号：US06187605B1

公开(公告)日：2001-02-13

申请号：US08308564

申请日：1994-09-19

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L2100

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  G02F2001/136281 ,  G02F2202/105 ,  H01L27/1203

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed of a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

摘要翻译： 利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。 用于光阀的半导体器件由具有不透明厚部分和薄透明部分的块状单晶硅构成的半导体衬底构成。 在透明部分中形成像素阵列。 驱动电路形成在不透明部分的顶面。 将透明支撑基板层叠到半导体基板的顶面以进行加强。 通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

公开(公告)号：US5633176A

公开(公告)日：1997-05-27

申请号：US463687

申请日：1995-06-05

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1362 ,  H01L27/12 ,  H01L21/84 ,  H01L21/304

CPC分类号： G02F1/13454 ,  H01L27/12 ,  H01L27/1203 ,  G02F2001/136281 ,  G02F2202/105 ,  Y10S438/977

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.

摘要翻译： 半导体衬底被用于整体形成驱动电路和像素阵列以产生用于光阀的透明半导体器件，其包括在半导体衬底的主面上的像素阵列区域和驱动电路区域。 在像素阵列区域的半导体基板的主面上形成有阻挡膜，在氧化硅阻挡膜上形成像素阵列。 在驱动电路区域上形成驱动电路，在驱动电路区域，氧化硅柱嵌入半导体基板的主面。 然后从与其主面相反的背面选择性地去除半导体衬底的厚度以到达阻挡膜。 在选择性去除步骤之后，半导体衬底在像素区域下方的部分被完全去除，而驱动电路区域下的半导体衬底的一部分保留。

公开(公告)号：US5574292A

公开(公告)日：1996-11-12

申请号：US57986

申请日：1993-05-05

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L29/78 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78621 ,  G02F2202/105

摘要： A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.

摘要翻译： 半导体器件具有形成在设置在电绝缘材料上的单硅层中的集成电路。 单晶硅层具有形成在其上的集成电路，钝化膜覆盖集成电路。 支撑构件通过粘合剂层固定到电绝缘材料以支撑单硅层。 集成电路包括具有形成在单硅层中的源极区，漏极区和沟道区的MIS晶体管。 该半导体装置适用于具有像素开关元件组和周边驱动电路一体地形成在共同的基板上的结构的高速，高容量的液晶光阀。

公开(公告)号：US06191476B1

公开(公告)日：2001-02-20

申请号：US08859571

申请日：1997-05-20

申请人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L2310

CPC分类号： G02F1/13454 ,  G02F1/133512 ,  G02F2001/136281 ,  H01L23/36 ,  H01L23/367 ,  H01L27/12 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.

摘要翻译： 为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路 。 一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

公开(公告)号：US5434433A

公开(公告)日：1995-07-18

申请号：US106418

申请日：1993-08-13

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  G02F2001/136281 ,  G02F2202/105

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

摘要翻译： 利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。 用于光阀的半导体器件由具有不透明厚部分和薄透明部分的大块单晶硅构成的半导体衬底构成。 在透明部分中形成像素阵列。 驱动电路形成在不透明部分的顶面。 将透明支撑基板层叠到半导体基板的顶面以进行加强。 通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

公开(公告)号：US6067062A

公开(公告)日：2000-05-23

申请号：US749292

申请日：1991-08-23

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

IPC分类号： G02F1/1337 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00 ,  H01L27/12

CPC分类号： G02F1/13454 ,  G02F1/13378 ,  G09G3/3648 ,  H01L27/1214 ,  H01L27/1251 ,  G02F1/136213 ,  G02F2202/105 ,  G09G2330/02 ,  G09G5/006

摘要： A light valve has a composite substrate comprised of an electrically insulating substrate and a semiconductor single crystal thin film formed over the electrically insulating substrate. A pixel array comprising semiconductor switch elements is formed in the semiconductor single crystal thin film. A peripheral circuit having circuit elements is formed in the semiconductor single crystal thin film so that a small-sized, high speed light valve is obtained. X- driver and Y-driver circuits are formed in the semiconductor single crystal thin film and controlled by a control circuit, such as a video signal processing circuit, which receives and processes video signals inputted directly from an external source. The peripheral circuit can be a DRAM sense amplifier for sensing charges stored in each pixel of the pixel array to detect defects in the pixel array. The peripheral circuit can be a photosensor circuit for detecting an intensity of incident light to monitor the performance of a light source of the light valve. The peripheral circuit can be a temperature sensor for detecting the temperature of a liquid crystal layer of the light valve, and may be comprised of Darlington connected NPN transistors formed in the semiconductor single crystal thin film. The peripheral circuit can also be a solar cell for converting incident light into electrical energy to supply power to at least one of the pixel array, X-driver and Y-driver circuits and the peripheral circuit.

摘要翻译： 光阀具有由电绝缘基板和形成在电绝缘基板上的半导体单晶薄膜构成的复合基板。 包含半导体开关元件的像素阵列形成在半导体单晶薄膜中。 在半导体单晶薄膜中形成具有电路元件的外围电路，从而获得小型高速光阀。 X驱动器和Y驱动器电路形成在半导体单晶薄膜中，并由诸如视频信号处理电路的控制电路控制，该电路接收并处理从外部源直接输入的视频信号。 外围电路可以是用于感测存储在像素阵列的每个像素中的电荷的DRAM读出放大器，以检测像素阵列中的缺陷。 外围电路可以是用于检测入射光的强度以监视光阀的光源的性能的光电传感器电路。 外围电路可以是用于检测光阀的液晶层的温度的温度传感器，并且可以由形成在半导体单晶薄膜中的达林顿连接的NPN晶体管组成。 外围电路也可以是用于将入射光转换为电能以向像素阵列，X驱动器和Y驱动器电路和外围电路中的至少一个供电的太阳能电池。

公开(公告)号：US5637187A

公开(公告)日：1997-06-10

申请号：US464075

申请日：1995-06-05

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

IPC分类号： G02F1/1337 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00 ,  H01L27/12 ,  H01L21/00

CPC分类号： G02F1/13454 ,  G02F1/13378 ,  G09G3/3648 ,  H01L27/1214 ,  H01L27/1251 ,  G02F1/136213 ,  G02F2202/105 ,  G09G2330/02 ,  G09G5/006

摘要： A process for forming a light valve device comprises forming a semiconductor single crystal film to form a composite substrate by polishing a semiconductor single crystal substrate after an electric insulating substrate has been bonded thereto; forming a group of pixel electrodes for defining a pixel region and a group of switch elements for selectively energizing the pixel electrodes by integrating a pixel array portion over the composite substrate; forming a liquid crystal aligning means for the pixel region; superposing an opposed substrate over the composite substrate with a gap therebetween; and filling the gap with liquid crystal material.

摘要翻译： 形成光阀装置的方法包括：形成半导体单晶膜，以在电绝缘基板已经结合之后通过抛光半导体单晶基板来形成复合基板; 形成用于限定像素区域的一组像素电极和一组开关元件，用于通过在复合衬底上积分像素阵列部分来选择性地激励像素电极; 形成用于像素区域的液晶对准装置; 在复合基板上叠置相对的基板，其间具有间隙; 并用液晶材料填充间隙。

公开(公告)号：US06357691B1

公开(公告)日：2002-03-19

申请号：US09417119

申请日：1999-10-13

申请人： Kenji Watanabe ,  Tsuneo Yamazaki ,  Fujio Kuwabara ,  Akihiro Sanda

发明人： Kenji Watanabe ,  Tsuneo Yamazaki ,  Fujio Kuwabara ,  Akihiro Sanda

IPC分类号： B65H1804

CPC分类号： H02K49/106 ,  B65H18/106 ,  B65H2301/4148 ,  B65H2403/7254 ,  B65H2403/731 ,  B65H2515/32 ,  B65H2701/1719 ,  H02K49/108 ,  Y10S242/909 ,  Y10T83/2074 ,  Y10T83/7809 ,  B65H2220/02

摘要： A winding device has a drive shaft having a flange, and a holder rotatably mounted on the drive shaft in covering relation to the flange, for winding the web therearound. The holder has a first torque adjustment plate rotatably mounted on the drive shaft and having a surface disposed in facing relation to a surface of the flange, the first torque adjustment plate supporting a plurality of magnets on the surface thereof, and a second torque adjustment plate rotatably mounted on the drive shaft and having a surface disposed in facing relation to an opposite surface of the flange, the second torque adjustment plate supporting a plurality of magnets on the surface thereof. The winding device is capable of winding relatively wide webs having a large thickness ranging from 100 to 150 &mgr;m, e.g., photographic photosensitive webs (films), with a low tension fluctuation ratio of ±5% or less, while producing large tension easily and stably. The winding device is constructed for easy maintenance.

摘要翻译： 卷绕装置具有驱动轴，该驱动轴具有凸缘，并且保持件可旋转地安装在驱动轴上以覆盖与凸缘相关联，用于绕其卷绕卷筒纸。 保持器具有可旋转地安装在驱动轴上的第一扭矩调节板，并且具有面对凸缘表面设置的表面，第一扭矩调节板在其表面上支撑多个磁体，第二扭矩调节板 可旋转地安装在驱动轴上并且具有以与凸缘的相反表面相对的方式设置的表面，第二扭矩调节板在其表面上支撑多个磁体。 卷绕装置能够卷绕具有100至150μm厚度的较大厚度的相对较宽的幅材，例如感光幅材（薄膜），低张力波动比为±5％或更小，同时容易且稳定地产生大张力 。 绕线装置构造简单易于维护。