Method and apparatus for controlling process target values based on manufacturing metrics
    12.
    发明授权
    Method and apparatus for controlling process target values based on manufacturing metrics 失效
    基于制造指标控制过程目标值的方法和装置

    公开(公告)号:US06937914B1

    公开(公告)日:2005-08-30

    申请号:US09789872

    申请日:2001-02-21

    IPC分类号: G05B19/418 G06F19/00

    摘要: A method for controlling a tool adapted to process workpieces in accordance with an operating recipe based on a process target value is provided. The method includes collecting manufacturing characteristic data associated with the workpieces; correlating the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces; and adjusting the process target value based on the first manufacturing metric distribution. A manufacturing system includes a processing tool and a target monitor. The processing tool is adapted to process workpieces in accordance with an operating recipe based on a process target value. The target monitor is adapted to collect manufacturing characteristic data associated with the workpieces, correlate the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces, and adjust the process target value based on the first manufacturing metric distribution.

    摘要翻译: 提供了一种用于控制适于根据基于过程目标值的操作配方来处理工件的工具的方法。 该方法包括收集与工件相关联的制造特性数据; 将所述制造特征数据与第一制造度量相关联,以产生所述工件的第一制造度量分布; 以及基于所述第一制造度量分布来调整所述过程目标值。 制造系统包括处理工具和目标监视器。 处理工具适于根据基于过程目标值的操作配方来处理工件。 目标监视器适于收集与工件相关联的制造特性数据,将制造特性数据与第一制造度量相关联,以产生工件的第一制造度量分布,并且基于第一制造度量分布来调整过程目标值。

    Method and apparatus for combining integrated and offline metrology for process control
    13.
    发明授权
    Method and apparatus for combining integrated and offline metrology for process control 有权
    用于组合和离线计量的过程控制的方法和装置

    公开(公告)号:US06645780B1

    公开(公告)日:2003-11-11

    申请号:US10022321

    申请日:2001-12-13

    IPC分类号: H01L2166

    CPC分类号: H01L22/26

    摘要: A method and an apparatus for combining integrated and offline metrology data for process control. A process operation on a first semiconductor wafer within a first lot of semiconductor wafers is performed. Integrated metrology data from the first semiconductor wafer is acquired, the integrated metrology data comprising inline metrology data. A dynamic time process control based upon the integrated metrology data is performed, the dynamic time process control comprising a wafer-to-wafer feedback loop. A second semiconductor wafer within the first lot is processed based upon the dynamic time process. Offline metrology data from at least one of the first semiconductor wafer and the second semiconductor wafer from the lot is acquired. A constant time process control based upon the offline metrology data and the integrated metrology data is performed, the constant time comprising performing a lot-to-lot feedback process.

    摘要翻译: 一种用于结合集成和离线量测数据进行过程控制的方法和装置。 执行在第一批半导体晶片内的第一半导体晶片上的处理操作。 采集来自第一半导体晶片的集成测量数据,该集成测量数据包括内联计量数据。 执行基于集成测量数据的动态时间过程控制,动态时间过程控制包括晶片到晶片反馈回路。 基于动态时间过程来处理第一批次内的第二半导体晶片。 获取来自批次的第一半导体晶片和第二半导体晶片中的至少一个的脱离测量数据。 执行基于离线量度数据和集成度量数据的恒定时间过程控制,该恒定时间包括进行批次间反馈处理。

    Method and apparatus for controlling a tool using a baseline control script
    14.
    发明授权
    Method and apparatus for controlling a tool using a baseline control script 有权
    使用基线控制脚本控制工具的方法和装置

    公开(公告)号:US06615098B1

    公开(公告)日:2003-09-02

    申请号:US09789871

    申请日:2001-02-21

    IPC分类号: G06F1760

    摘要: A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a control routine for the selected tool based on the tool type; and executing the control routine to generate a control action for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script. The control executor is adapted to execute the baseline control script, determine a tool type based on the context information, select a control routine for the selected tool based on the tool type, and execute the control routine to generate a control action for the selected tool.

    摘要翻译: 一种用于控制制造系统的方法包括:处理多个工具中的工件; 为所述多个工具的所选择的工具启动基线控制脚本; 提供基线控制脚本的上下文信息; 基于上下文信息确定工具类型; 根据刀具类型选择所选刀具的控制程序; 以及执行所述控制程序以产生所选择的工具的控制动作。 制造系统包括适于处理工件的多个工具,控制执行管理器和控制执行器。 所述控制执行管理器适于启动用于所述多个工具的所选工具的基线控制脚本并提供所述基线控制脚本的上下文信息。 控制执行器适于执行基线控制脚本,基于上下文信息确定工具类型,基于工具类型选择所选刀具的控制程序,并执行控制程序以生成所选刀具的控制动作 。

    Dynamic adaptive sampling rate for model prediction
    15.
    发明授权
    Dynamic adaptive sampling rate for model prediction 有权
    模型预测的动态自适应采样率

    公开(公告)号:US08017411B2

    公开(公告)日:2011-09-13

    申请号:US10323530

    申请日:2002-12-18

    IPC分类号: H01L21/00

    摘要: A method and an apparatus for dynamically adjusting a sampling rate relating to wafer examination. A process step is performed upon a plurality of workpieces associated with a lot. A sample rate for acquiring metrology data relating to at least one of the processed workpiece is determined. A dynamic sampling rate adjustment process is performed to adaptively modify the sample rate. The dynamic sampling rate adjustment process includes comparing a predicted process outcome and an actual process outcome and modifying the sampling rate based upon the comparison.

    摘要翻译: 一种用于动态调整与晶片检查相关的采样率的方法和装置。 在与批次相关联的多个工件上执行处理步骤。 确定用于获取与所处理的工件中的至少一个相关的度量数据的采样率。 执行动态采样率调整过程以自适应地修改采样率。 动态采样率调整过程包括比较预测过程结果和实际过程结果,并根据比较修改采样率。

    Method and apparatus for predicting electrical parameters using measured and predicted fabrication parameters
    16.
    发明授权
    Method and apparatus for predicting electrical parameters using measured and predicted fabrication parameters 有权
    使用测量和预测制造参数预测电气参数的方法和装置

    公开(公告)号:US06917849B1

    公开(公告)日:2005-07-12

    申请号:US10323543

    申请日:2002-12-18

    IPC分类号: G06F19/00 H01L21/66

    CPC分类号: H01L22/20

    摘要: A method includes collecting a first fabrication parameter associated with the processing of a selected semiconductor device. A second fabrication parameter is estimated for the selected semiconductor device. A first value for at least one electrical characteristic of the selected semiconductor device is predicted based on the collected first fabrication parameter and the estimated second fabrication parameter. A system includes a data collection unit and a prediction unit. The data collection unit is configured to collect a first fabrication parameter associated with the processing of a selected semiconductor device. The prediction unit is configured to estimate a second fabrication parameter for the selected semiconductor device and predict a first value for at least one electrical characteristic of the selected semiconductor device based on the collected first fabrication parameter and the estimated second fabrication parameter.

    摘要翻译: 一种方法包括收集与所选半导体器件的处理相关联的第一制造参数。 对于所选择的半导体器件估计第二制造参数。 基于收集的第一制造参数和估计的第二制造参数来预测所选择的半导体器件的至少一个电特性的第一值。 系统包括数据收集单元和预测单元。 数据收集单元被配置为收集与所选择的半导体器件的处理相关联的第一制造参数。 预测单元被配置为基于所收集的第一制造参数和估计的第二制造参数来估计所选择的半导体器件的第二制造参数并且预测所选择的半导体器件的至少一个电特性的第一值。

    Dynamic process state adjustment of a processing tool to reduce non-uniformity
    17.
    发明授权
    Dynamic process state adjustment of a processing tool to reduce non-uniformity 有权
    动态过程状态调整的加工工具减少不均匀性

    公开(公告)号:US06751518B1

    公开(公告)日:2004-06-15

    申请号:US10134244

    申请日:2002-04-29

    IPC分类号: G06F1900

    CPC分类号: H01L21/67276

    摘要: A method and an apparatus for reducing process non-uniformity across a processed semiconductor wafers. A first semiconductor wafer is processed. A process non-uniformity associated with the first processed semiconductor wafer is identified. A feedback correction in response to the process non-uniformity during processing of a second semiconductor wafer is performed and/or a feed-forward compensation is performed in response to the process non-uniformity during a subsequent process performed across the first semiconductor wafer is performed.

    摘要翻译: 一种用于减少经处理的半导体晶片的工艺不均匀性的方法和装置。 处理第一半导体晶片。 识别与第一处理的半导体晶片相关联的工艺不均匀。 执行响应于处理第二半导体晶片期间的处理不均匀性的反馈校正和/或响应于在第一半导体晶片执行的后续处理期间的处理不均匀性执行前馈补偿 。

    Method and apparatus for determining a sampling plan based on process and equipment state information
    18.
    发明授权
    Method and apparatus for determining a sampling plan based on process and equipment state information 有权
    基于过程和设备状态信息确定采样计划的方法和装置

    公开(公告)号:US06821792B1

    公开(公告)日:2004-11-23

    申请号:US10023119

    申请日:2001-12-18

    IPC分类号: H01L21302

    摘要: A processing line includes a process tool, a metrology tool, a tool state monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The tool state monitor is configured to observe at least one tool state variable value during the processing of a selected workpiece in the processing tool. The sampling controller is configured to receive the observed tool state variable value and determine the sampling plan for the metrology tool based on the observed tool state variable value. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. At least one tool state variable value is observed during the processing of a particular workpiece in the processing tool. The sampling plan is determined based on the observed tool state variable value.

    摘要翻译: 处理线包括处理工具,计量工具,工具状态监视器和采样控制器。 处理工具被配置为处理工件。 计量工具被配置为根据抽样计划来测量所选择的工件的输出特性。 工具状态监视器被配置为在处理工具中的所选择的工件的处理期间观察至少一个刀具状态变量值。 采样控制器被配置为接收观察到的工具状态变量值,并且基于所观测的工具状态变量值来确定测量工具的采样计划。 一种用于处理工件的方法包括在处理工具中处理多个工件。 所选工件的特性根据抽样计划进行测量。 在处理工具中的特定工件的处理期间观察到至少一个刀具状态变量值。 采样计划是根据观察到的工具状态变量值确定的。

    Method and apparatus for integrating multiple process controllers
    19.
    发明授权
    Method and apparatus for integrating multiple process controllers 失效
    用于集成多个过程控制器的方法和设备

    公开(公告)号:US06801817B1

    公开(公告)日:2004-10-05

    申请号:US09789140

    申请日:2001-02-20

    IPC分类号: G06F1900

    摘要: A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a group of control routines for the selected tool based on the tool type; determining required control routines from the group of control routines based on the context information; and executing the required control routines to generate control actions for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script. The control executor is adapted to execute the baseline control script, determine a tool type based on the context information, select a group of control routines for the selected tool based on the tool type, determine required control routines from the group of control routines based on the context information, and execute the required control routines to generate control actions for the selected tool.

    摘要翻译: 一种用于控制制造系统的方法包括:处理多个工具中的工件; 为所述多个工具的所选择的工具启动基线控制脚本; 提供基线控制脚本的上下文信息; 基于上下文信息确定工具类型; 基于所述工具类型为所选择的工具选择一组控制例程; 基于所述上下文信息来确定来自所述一组控制例程的所需控制例程; 并执行所需的控制例程以产生所选择的工具的控制动作。 制造系统包括适于处理工件的多个工具,控制执行管理器和控制执行器。 所述控制执行管理器适于启动用于所述多个工具的所选工具的基线控制脚本并提供所述基线控制脚本的上下文信息。 控制执行器适于执行基线控制脚本,基于上下文信息确定工具类型,基于工具类型为所选择的工具选择一组控制例程,从基于控制例程的组中确定所需的控制例程 上下文信息,并执行所需的控制例程以生成所选择的工具的控制动作。