公开(公告)号：US20210193477A1

公开(公告)日：2021-06-24

申请号：US17114508

申请日：2020-12-08

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Kenta ONO ,  Maju TOMURA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C23C16/455 ,  C23C16/24 ,  B05D1/00 ,  C23C16/56 ,  B05D3/14

Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.