公开(公告)号：US20240047220A1

公开(公告)日：2024-02-08

申请号：US18454624

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Kenta ONO ,  Shinya ISHIKAWA ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01L21/0274 ,  H01L21/3065 ,  H01J2237/334

Abstract: One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.

公开(公告)号：US20210202260A1

公开(公告)日：2021-07-01

申请号：US16952086

申请日：2020-11-19

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Kenta ONO ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/67

Abstract: A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of aside wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.

公开(公告)号：US20240071772A1

公开(公告)日：2024-02-29

申请号：US18374878

申请日：2023-09-29

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Kenta ONO ,  Masanobu HONDA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/033 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01J37/32899 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L22/12 ,  H01J2237/3341

Abstract: [Object] To provide a technique for controlling a dimension and/or a shape of an opening formed in an etching film.
[Solution] A substrate processing method according to the present disclosure includes: preparing a substrate having (a) an etching film, (b) a mask film formed on the etching film and having a sidewall that defines at least one opening on the etching film, and (c) a protective film formed to surround the opening on at least the sidewall of the mask film and containing at least one element selected from the group consisting of boron, phosphorus, sulfur, and tin; and etching the etching film by using the protective film and the mask film as a mask.

公开(公告)号：US20220262645A1

公开(公告)日：2022-08-18

申请号：US17734125

申请日：2022-05-02

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Kenta ONO ,  Maju TOMURA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C23C16/24 ,  B05D1/00 ,  C23C16/56 ,  B05D3/14 ,  C23C16/455

Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.

公开(公告)号：US20240047223A1

公开(公告)日：2024-02-08

申请号：US18485978

申请日：2023-10-12

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Kenta ONO ,  Shinya ISHIKAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01L21/32139 ,  H01L21/308 ,  H01J2237/332

Abstract: A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.

公开(公告)号：US20230134436A1

公开(公告)日：2023-05-04

申请号：US17975704

申请日：2022-10-28

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Kenta ONO ,  Masanobu HONDA

IPC: H01L21/308 ,  H01L21/67

Abstract: A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.

公开(公告)号：US20210398818A1

公开(公告)日：2021-12-23

申请号：US17351549

申请日：2021-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenta ONO ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

公开(公告)号：US20240006188A1

公开(公告)日：2024-01-04

申请号：US18339021

申请日：2023-06-21

Applicant: Tokyo Electron Limited

Inventor： Takahiro YONEZAWA ,  Kenta ONO

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334 ,  H01J37/32082

Abstract: Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. The method includes: (a) preparing a substrate on a substrate support in the chamber, the substrate including an etching target film and a metal-containing film disposed on the etching target film, the metal-containing film including a side face defining at least one opening on the etching target film; (b) forming a deposited film on at least a portion of the surface of the metal-containing film using a plasma formed from a first processing gas, the first processing gas including a gas containing silicon, carbon or metal; and (c) removing at least a portion of the side face of the metal-containing film using a plasma formed from a second processing gas.

公开(公告)号：US20230377899A1

公开(公告)日：2023-11-23

申请号：US18199734

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro YONEZAWA ,  Yusuke TAKINO ,  Kenta ONO ,  Tetsuya NISHIZUKA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01J37/3211 ,  H01L21/32136 ,  H01L21/31116 ,  H01J2237/334

Abstract: A plasma processing method according to the present disclosure is performed with a plasma processing apparatus, and includes: (a) preparing a substrate on a substrate support in the chamber, the substrate having an etching target film including a first silicon-containing film, and a first metal-containing film on the etching target film, the first metal-containing film including an opening pattern; and (b) etching the etching target film. (b) includes supplying a processing gas including one or more gases containing carbon, hydrogen, and fluorine into the chamber to form a plasma from the processing gas within the chamber and etch the first silicon-containing film to form the opening pattern in the first silicon-containing film, and a ratio of the number of hydrogen atoms to the number of fluorine atoms in the processing gas is 0.3 or more.

公开(公告)号：US20210233778A1

公开(公告)日：2021-07-29

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju TOMURA ,  Tomohiko NIIZEKI ,  Takayuki KATSUNUMA ,  Hironari SASAGAWA ,  Yuta NAKANE ,  Shinya ISHIKAWA ,  Kenta ONO ,  Sho KUMAKURA ,  Yusuke TAKINO ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.