公开(公告)号：US20240047223A1

公开(公告)日：2024-02-08

申请号：US18485978

申请日：2023-10-12

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Kenta ONO ,  Shinya ISHIKAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01L21/32139 ,  H01L21/308 ,  H01J2237/332

Abstract: A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.

公开(公告)号：US20230134436A1

公开(公告)日：2023-05-04

申请号：US17975704

申请日：2022-10-28

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Kenta ONO ,  Masanobu HONDA

IPC: H01L21/308 ,  H01L21/67

Abstract: A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.

公开(公告)号：US20230090650A1

公开(公告)日：2023-03-23

申请号：US17940020

申请日：2022-09-08

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Daiki HARIU

IPC: H01J37/32

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

公开(公告)号：US20240297054A1

公开(公告)日：2024-09-05

申请号：US18660822

申请日：2024-05-10

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Shinya TAMONOKI ,  Koichi NAGAMI ,  Shinya ISHIKAWA ,  Naoki FUJIWARA ,  Naoki MIHARA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/67706 ,  H01L21/68764

Abstract: There is a substrate processing apparatus for processing a substrate, comprising: a power receiver including a power reception coil to which power is transmitted in a non-contact manner from a power transmission coil located outside the substrate processing apparatus, wherein the substrate processing apparatus is configured to supply power to at least one unit or member that uses power from the power receiver.

公开(公告)号：US20240266154A1

公开(公告)日：2024-08-08

申请号：US18639975

申请日：2024-04-19

Applicant: Tokyo Electron Limited

Inventor： Daiki HARIU ,  Shinya ISHIKAWA ,  Haruka ENDO ,  Miyuki AOYAMA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32513 ,  H01J2237/2005 ,  H01J2237/2007

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a base support disposed within the plasma processing chamber; a base having a first through hole penetrating from an upper surface of the base to a lower surface of the base and disposed on the base support; an electrostatic chuck having a second through hole communicating with the first through hole by penetrating from a substrate support surface or a ring support surface to a lower surface of the electrostatic chuck and disposed on the base; a first insulating member disposed within the first through hole; a second insulating member disposed within the first through hole to surround at least a portion of the first insulating member; a first sealing member disposed between the first insulating member and the electrostatic chuck; and a second sealing member disposed between the first insulating member and an insulating support member.

公开(公告)号：US20240112918A1

公开(公告)日：2024-04-04

申请号：US18479986

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Noboru SAITO ,  Yuta NAKANE ,  Atsushi TAKAHASHI ,  Shinya ISHIKAWA ,  Satoshi OHUCHIDA ,  Maju TOMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32899 ,  H01L21/308 ,  H01L21/31144

Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.

公开(公告)号：US20230187184A1

公开(公告)日：2023-06-15

申请号：US18080645

申请日：2022-12-13

Applicant: Tokyo Electron Limited

Inventor： Shinya ISHIKAWA ,  Daiki HARIU

IPC: H01J37/32

CPC classification number: H01J37/32577 ,  H01J37/32146 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01J2237/2007

Abstract: A plasma processing apparatus includes: a chamber; a bias power supply that generates an electric bias; a substrate support that supports a substrate and an edge ring in the chamber, and including a first region configured to hold the substrate, a second region provided to surround the first region and hold the edge ring, a first bias electrode provided in the first region to receive the electric bias, a first impedance adjusting electrode provided in the first region to be grounded, a second bias electrode provided in the second region to receive the electric bias, and a second impedance adjusting electrode provided in the second region to be grounded; an impedance adjusting mechanism connected to at least one of the first impedance adjusting electrode and the second impedance adjusting electrode; and an electric path connecting the bias power supply, the first bias electrode, and the second bias electrode.

公开(公告)号：US20200243298A1

公开(公告)日：2020-07-30

申请号：US16775960

申请日：2020-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Toru HISAMATSU ,  Shinya ISHIKAWA

IPC: H01J37/18 ,  C23C16/505 ,  H01J37/32

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

公开(公告)号：US20240282578A1

公开(公告)日：2024-08-22

申请号：US18626719

申请日：2024-04-04

Applicant: Tokyo Electron Limited

Inventor： Toru HISAMATSU ,  Takayuki KATSUNUMA ,  Shinya ISHIKAWA ,  Yoshihide KIHARA ,  Masanobu HONDA

IPC: H01L21/033 ,  C23C16/04 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  C23C16/042

Abstract: A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.

公开(公告)号：US20240047220A1

公开(公告)日：2024-02-08

申请号：US18454624

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Kenta ONO ,  Shinya ISHIKAWA ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01L21/0274 ,  H01L21/3065 ,  H01J2237/334

Abstract: One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.