公开(公告)号：US20190006206A1

公开(公告)日：2019-01-03

申请号：US16019773

申请日：2018-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Takahisa Otsuka ,  Kazuyoshi Shinohara ,  Takashi Nakazawa ,  Seiya Fujimoto ,  Yuichi Douki

IPC: H01L21/67 ,  H01L21/3065

Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.