公开(公告)号：US20210175093A1

公开(公告)日：2021-06-10

申请号：US17104086

申请日：2020-11-25

Applicant: Tokyo Electron Limited

Inventor： Taisei Inoue ,  Hiroki Sakurai ,  Takashi Nakazawa

IPC: H01L21/3213 ,  C23F1/30 ,  H01L21/67

Abstract: A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.

公开(公告)号：US11862474B2

公开(公告)日：2024-01-02

申请号：US17104086

申请日：2020-11-25

Applicant: Tokyo Electron Limited

Inventor： Taisei Inoue ,  Hiroki Sakurai ,  Takashi Nakazawa

IPC: H01L21/3213 ,  C23F1/30 ,  H01L21/67

CPC classification number: H01L21/32134 ,  C23F1/30 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/67253

Abstract: A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.

公开(公告)号：US11551935B2

公开(公告)日：2023-01-10

申请号：US16826504

申请日：2020-03-23

Applicant: Tokyo Electron Limited

Inventor： Takashi Nakazawa ,  Kazuyoshi Shinohara

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/67

Abstract: A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

公开(公告)号：US20200321217A1

公开(公告)日：2020-10-08

申请号：US16826504

申请日：2020-03-23

Applicant: Tokyo Electron Limited

Inventor： Takashi Nakazawa ,  Kazuyoshi Shinohara

IPC: H01L21/306 ,  H01L21/67

Abstract: A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

公开(公告)号：US20140373877A1

公开(公告)日：2014-12-25

申请号：US14297723

申请日：2014-06-06

Applicant: Tokyo Electron Limited

Inventor： Shigehisa Inoue ,  Daisuke Nakayama ,  Katsufumi Matsuki ,  Takuro Masuzumi ,  Yuki Yoshida ,  Meitoku Aibara ,  Hiromi Kiyose ,  Takashi Uno ,  Hirotaka Maruyama ,  Kazuya Koyama ,  Takashi Nakazawa

IPC: B08B3/02 ,  H01L21/67

CPC classification number: B08B3/02 ,  H01L21/67051

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method in which a substrate is processed by a processing liquid in the form of liquid droplets. The liquid processing apparatus includes: a first processing liquid ejecting unit configured to eject a first processing liquid in a form of liquid droplets which contains pure water toward the surface of the substrate; and a second processing liquid ejecting unit configured to eject a second processing liquid as a continuous liquid stream toward the surface of the substrate processed by the first processing liquid in the form of the liquid droplets. The second processing liquid inverts a zeta potential on the surface of the substrate into a negative zeta potential.

Abstract translation: 公开了一种液体处理装置和液体处理方法，其中基板由液滴形式的处理液体处理。 液体处理装置包括：第一处理液体喷射单元，被配置为将含有纯水的液滴形式的第一处理液喷射到基板的表面; 以及第二处理液体喷射单元，被配置为以液滴的形式将作为连续液体流的第二处理液体朝向由第一处理液体处理的基板的表面喷射。 第二处理液将基板表面上的ζ电位反转为负ζ电位。

公开(公告)号：US11955352B2

公开(公告)日：2024-04-09

申请号：US17141670

申请日：2021-01-05

Applicant: Tokyo Electron Limited

Inventor： Hiroki Sakurai ,  Daisuke Goto ,  Takashi Nakazawa ,  Yusuke Takamatsu ,  Yusuke Hashimoto

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  H01L21/68764

Abstract: A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.

公开(公告)号：US10685858B2

公开(公告)日：2020-06-16

申请号：US16019773

申请日：2018-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Takahisa Otsuka ,  Kazuyoshi Shinohara ,  Takashi Nakazawa ,  Seiya Fujimoto ,  Yuichi Douki

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/306

Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.

公开(公告)号：US20170084470A1

公开(公告)日：2017-03-23

申请号：US15263451

申请日：2016-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Suzuki ,  Takahisa Otsuka ,  Kiyohisa Tateyama ,  Takashi Nakazawa

IPC: H01L21/67 ,  F26B3/20 ,  B08B3/10 ,  B08B3/08 ,  B08B9/08

CPC classification number: H01L21/67051 ,  B08B3/10 ,  B08B9/08 ,  F26B3/04 ,  F26B3/20 ,  F26B21/14 ,  H01L21/6708

Abstract: A drying time after cleaning a surface of a cleaning target including a wall which constitutes a processing chamber of a substrate processing apparatus and a device provided within the processing chamber can be shortened. After performing a cleaning process of dissolving a removal target adhering to the surface of the cleaning target with water by discharging the water into the processing chamber 20 and allowing the surface of the cleaning target 42, 20a and 53 to be wet with the water, a solvent supplying process of supplying a solvent having higher volatility than the water toward the water adhering to the surface of the cleaning target is performed by discharging the solvent into the processing chamber. Then, a drying process of drying the surface of the cleaning target is performed.

公开(公告)号：US12264396B2

公开(公告)日：2025-04-01

申请号：US18517341

申请日：2023-11-22

Applicant: Tokyo Electron Limited

Inventor： Takashi Nakazawa ,  Isamu Miyamoto ,  Keigo Satake ,  Kenji Nakamizo

IPC: C23F1/26 ,  C23F1/08

Abstract: A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

公开(公告)号：US11905603B2

公开(公告)日：2024-02-20

申请号：US17553971

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Takashi Nakazawa ,  Isamu Miyamoto ,  Keigo Satake ,  Kenji Nakamizo

IPC: C23F1/26 ,  C23F1/08

CPC classification number: C23F1/26 ,  C23F1/08

Abstract: A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.