公开(公告)号：US10937669B2

公开(公告)日：2021-03-02

申请号：US15989744

申请日：2018-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kosuke Fukuda ,  Mikio Nakashima ,  Kazuyoshi Shinohara ,  Hiroyuki Higashi

IPC: H01L21/67

Abstract: A substrate solution-treatment apparatus includes: a substrate holding part for holding a substrate; a nozzle for supplying a treatment solution onto the substrate; a supply line; a flow rate control mechanism including a flow rate meter and a flow rate control valve installed in the supply line; an opening/closing valve installed in the supply line; and a control part for controlling operations of the flow rate control mechanism and the opening/closing valve. The flow rate control mechanism controls the flow rate control valve such that a detection value of the flow rate meter coincides with a flow rate target value provided from the control part. The control part controls the nozzle to supply the treatment solution onto the substrate with the opening/closing valve opened, and provides a first flow rate as the flow rate target value to the flow rate control mechanism.

公开(公告)号：US10685858B2

公开(公告)日：2020-06-16

申请号：US16019773

申请日：2018-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Takahisa Otsuka ,  Kazuyoshi Shinohara ,  Takashi Nakazawa ,  Seiya Fujimoto ,  Yuichi Douki

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/306

Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.

公开(公告)号：US09805957B2

公开(公告)日：2017-10-31

申请号：US14296813

申请日：2014-06-05

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

Abstract: A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US09764345B2

公开(公告)日：2017-09-19

申请号：US14291494

申请日：2014-05-30

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kai ,  Yoshinori Ikeda ,  Kazuyoshi Shinohara ,  Tetsuya Oda ,  Satoru Tanaka ,  Yuki Yoshida ,  Meitoku Aibara

IPC: H01L21/67 ,  C03C23/00 ,  B05B15/02

CPC classification number: B05B15/555 ,  C03C23/0075 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate processing apparatus according to the present disclosure includes first and second nozzles that eject a processing liquid to a substrate; a moving mechanism that moves the first and second nozzles; and a nozzle cleaning device that cleans at least the second nozzle. The nozzle cleaning device includes a cleaning bath and an overflow bath. The cleaning bath includes a liquid storage portion that stores a cleaning liquid for cleaning the second nozzle, and an overflow portion that discharges the cleaning liquid exceeding a predetermined level from the liquid storage portion. The overflow bath is disposed adjacent to the cleaning bath and receives the cleaning liquid discharged from the overflow portion and discharge the received cleaning liquid to the outside.

公开(公告)号：US09768039B2

公开(公告)日：2017-09-19

申请号：US14084839

申请日：2013-11-20

Applicant: Tokyo Electron Limited

Inventor： Kazuhiro Aiura ,  Norihiro Ito ,  Hidetoshi Nakao ,  Kazuyoshi Shinohara ,  Satoru Tanaka ,  Yuki Yoshida ,  Meitoku Aibara

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/68735

Abstract: A substrate processing apparatus includes a rotary cup that is provided at a substrate holding unit to surround a substrate held thereon and to be rotated along with the substrate holding unit, and configured to guide a processing liquid dispersed from the substrate; and an outer cup that is provided around the rotary cup with a gap therebetween and configured to collect the guided processing liquid by the rotary cup. Further, a height of an upper end of the rotary cup is higher than that of the outer cup. Furthermore, an outward protrusion protruded outwards in a radial direction thereof and extended along a circumference thereof is provided at an upper end portion of an outer surface of the rotary cup, and the outward protrusion blocks mist of the processing liquid dispersed from the gap between the rotary cup and the outer cup toward a space above the substrate.

公开(公告)号：US20170047219A1

公开(公告)日：2017-02-16

申请号：US15307427

申请日：2015-05-01

Applicant: Tokyo Electron Limited

Inventor： Kazuyoshi Shinohara ,  Yuki Yoshida

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/67

CPC classification number: H01L21/02052 ,  B08B3/024 ,  B08B3/08 ,  F26B15/04 ,  F26B21/004 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67051

Abstract: A substrate processing apparatus includes a substrate rotating unit 11 configured to hold and rotate a substrate 3; a processing liquid supplying unit 13 configured to supply a processing liquid to the substrate; and a replacement liquid supplying unit 14 configured to supply, to the substrate, a replacement liquid with which the processing liquid supplied from the processing liquid supplying unit is replaced. While the replacement liquid supplying unit 14 supplies the replacement liquid to the substrate, the processing liquid supplying unit 13 supplies the processing liquid to a position on the substrate positioned at an outer peripheral side thereof than a supply position of the replacement liquid to form a liquid film of the processing liquid. It is possible to maintain a state in which the entire surface of the substrate is covered with the liquid film without increasing consumption amount of the replacement liquid.

Abstract translation: 基板处理装置包括：基板旋转单元11，被配置为保持和旋转基板3; 处理液供给部13，被配置为向所述基板供给处理液; 以及更换液体供给单元14，被配置为向所述基板供给更换从所述处理液供给单元供给的所述处理液的更换液体。 在替换液供给部14将更换液体供给到基板的情况下，处理液供给部13将处理液供给位于其位于其外周侧的基板上的位置，而不是更换液体的供给位置，形成液体 胶片处理液。 可以保持基板的整个表面被液膜覆盖而不增加更换液体的消耗量的状态。

公开(公告)号：US20140352730A1

公开(公告)日：2014-12-04

申请号：US14291494

申请日：2014-05-30

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kai ,  Yoshinori Ikeda ,  Kazuyoshi Shinohara ,  Tetsuya Oda ,  Satoru Tanaka ,  Yuki Yoshida ,  Meitoku Aibara

IPC: B08B3/02 ,  B05B15/02

CPC classification number: B05B15/555 ,  C03C23/0075 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate processing apparatus according to the present disclosure includes first and second nozzles that eject a processing liquid to a substrate; a moving mechanism that moves the first and second nozzles; and a nozzle cleaning device that cleans at least the second nozzle. The nozzle cleaning device includes a cleaning bath and an overflow bath. The cleaning bath includes a liquid storage portion that stores a cleaning liquid for cleaning the second nozzle, and an overflow portion that discharges the cleaning liquid exceeding a predetermined level from the liquid storage portion. The overflow bath is disposed adjacent to the cleaning bath and receives the cleaning liquid discharged from the overflow portion and discharge the received cleaning liquid to the outside.

Abstract translation: 根据本公开的基板处理装置包括将处理液喷射到基板的第一和第二喷嘴; 移动机构，其移动所述第一和第二喷嘴; 以及清洁至少第二喷嘴的喷嘴清洁装置。 喷嘴清洁装置包括清洗槽和溢流槽。 清洗槽包括储存用于清洗第二喷嘴的清洗液的液体储存部分和从液体储存部分排出超过预定水平的清洗液体的溢流部分。 溢流槽设置在清洗槽附近，并接收从溢流部排出的清洗液，并将接收到的清洗液排出到外部。

公开(公告)号：US12027394B2

公开(公告)日：2024-07-02

申请号：US18297042

申请日：2023-04-07

Applicant: Tokyo Electron Limited

Inventor： Hiroki Sakurai ,  Kazuki Kosai ,  Kazuyoshi Shinohara

IPC: B08B3/02 ,  B08B7/04 ,  B08B13/00 ,  H01L21/67

CPC classification number: H01L21/67253 ,  B08B3/022 ,  B08B13/00 ,  H01L21/67023

Abstract: A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

公开(公告)号：US11769661B2

公开(公告)日：2023-09-26

申请号：US16881306

申请日：2020-05-22

Applicant: Tokyo Electron Limited

Inventor： Hirofumi Takeguchi ,  Kazuyoshi Shinohara ,  Takahisa Otsuka ,  Suguen Lee

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/08 ,  B08B3/10

CPC classification number: H01L21/02057 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67051 ,  H01L21/68764 ,  B08B2203/005 ,  B08B2203/007

Abstract: A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

公开(公告)号：US10475638B2

公开(公告)日：2019-11-12

申请号：US15307427

申请日：2015-05-01

Applicant: Tokyo Electron Limited

Inventor： Kazuyoshi Shinohara ,  Yuki Yoshida

IPC: B08B3/02 ,  H01L21/02 ,  B08B3/08 ,  H01L21/67 ,  F26B21/00 ,  F26B15/04

Abstract: A substrate processing apparatus includes a substrate rotating unit 11 configured to hold and rotate a substrate 3; a processing liquid supplying unit 13 configured to supply a processing liquid to the substrate; and a replacement liquid supplying unit 14 configured to supply, to the substrate, a replacement liquid with which the processing liquid supplied from the processing liquid supplying unit is replaced. While the replacement liquid supplying unit 14 supplies the replacement liquid to the substrate, the processing liquid supplying unit 13 supplies the processing liquid to a position on the substrate positioned at an outer peripheral side thereof than a supply position of the replacement liquid to form a liquid film of the processing liquid. It is possible to maintain a state in which the entire surface of the substrate is covered with the liquid film without increasing consumption amount of the replacement liquid.