专利检索 ap:("Tomoyoshi Sasakawa" OR "Nobuhisa Kitagawa" OR "Tadashi Koike" OR "Hiroyuki Hyakutake") AND inv:"Tadashi Koike" 第 2 页

11.

外观设计
Electronic thermometer 有权
标题翻译：电子体温计

公开(公告)号：USD539178S1

公开(公告)日：2007-03-27

申请号：US29245694

申请日：2005-12-29

申请人： Tetsuya Nakada , Masaki Tomioka , Tadashi Koike , Fumie Shibata , Yuki Shibata

设计人： Tetsuya Nakada , Masaki Tomioka , Tadashi Koike , Fumie Shibata , Yuki Shibata

12.

外观设计
Sphygmomanometer 有权

公开(公告)号：USD532518S1

公开(公告)日：2006-11-21

申请号：US29226286

申请日：2005-03-29

申请人： Kenji Eda , Takahide Tanaka , Yosuke Fujii , Tadashi Koike , Hiroya Nakanishi , So Noguchi , Kiyoshi Motomura

设计人： Kenji Eda , Takahide Tanaka , Yosuke Fujii , Tadashi Koike , Hiroya Nakanishi , So Noguchi , Kiyoshi Motomura

13.

外观设计
Sphygmomanometer 失效

公开(公告)号：USD530012S1

公开(公告)日：2006-10-10

申请号：US29212055

申请日：2004-08-26

申请人： Kenji Eda , Takahide Tanaka , Tetsuya Nakada , Takefumi Nakanishi , Hiroya Nakanishi , Tadashi Koike , Chiaki Murata

设计人： Kenji Eda , Takahide Tanaka , Tetsuya Nakada , Takefumi Nakanishi , Hiroya Nakanishi , Tadashi Koike , Chiaki Murata

14.

外观设计
Pulse wave measuring instrument with a sphygmomanometer 失效
标题翻译：带血压计的脉搏波测量仪

公开(公告)号：USD509591S1

公开(公告)日：2005-09-13

申请号：US29203777

申请日：2004-04-20

申请人： Shigeru Tomioka , Takashi Inagaki , Tadashi Koike , So Noguchi , Hidekazu Yagi

设计人： Shigeru Tomioka , Takashi Inagaki , Tadashi Koike , So Noguchi , Hidekazu Yagi

15.

发明授权
Audio sound recording/reproducing apparatus using semiconductor memory 失效
标题翻译：使用半导体存储器的音频声音记录/重放装置

公开(公告)号：US5610774A

公开(公告)日：1997-03-11

申请号：US205769

申请日：1994-03-04

申请人： Kousou Hayashi , Tadashi Koike

发明人： Kousou Hayashi , Tadashi Koike

IPC分类号： G10L19/00 , G06F3/16 , G06F17/21 , G06K19/073 , G07F7/10 , G11C27/00 , G11B5/86

CPC分类号： G07F7/1008 , G06F17/21 , G06F3/16 , G06Q20/346

摘要： In an audio sound recording/reproducing apparatus, instruction information related to a document is recorded in a recording region of a semiconductor memory together with the document. In the semiconductor memory, flags related to a document portion and an instruction portion, and the addresses of the document and the instruction portions are provided. At the time of reproduction, the instruction portion is reproduced prior to reproduction of the document portion. When the content of the semiconductor memory is stored in a built-in memory in the apparatus, the instruction portion is stored before the document portion is stored. Since the instruction portion is reproduced prior to the document portion at the time of reproduction, the user does not have to retrieve the instruction portion.

摘要翻译： 在音频声音记录/再现装置中，与文件相关的指令信息被记录在半导体存储器的记录区域中。在半导体存储器中，提供与文档部分和指令部分相关的标志，以及文档和指令部分的地址。在再现时，在再现文档部分之前再现指令部分。当半导体存储器的内容存储在装置中的内置存储器中时，在存储文档部分之前存储指令部分。由于在再现时在文档部分之前再现指令部分，所以用户不必检索指令部分。

16.

发明授权
Optical recording media 失效
标题翻译：光学记录媒体

公开(公告)号：US5132153A

公开(公告)日：1992-07-21

申请号：US456645

申请日：1989-12-27

申请人： Sumio Hirose , Shigeru Takahara , Tadashi Koike , Shin Aihara , Keiji Ueno

发明人： Sumio Hirose , Shigeru Takahara , Tadashi Koike , Shin Aihara , Keiji Ueno

IPC分类号： G11B7/244 , G11B7/245

CPC分类号： G11B7/246 , G11B7/2575 , Y10S428/913 , Y10S430/146 , Y10T428/24802 , Y10T428/31663

摘要： Disclosed are optical recording media, each of which is composed of a substrate and a recording layer formed on the substrate. The recording layer includes an organic-dye-containing layer and an organopolysiloxane resin layer formed by the condensation of a trifunctional silane represented by R.sup.1 Si(Or.sup.2).sub.3-n (X).sub.n and a tetrafunctional silane represented by Si(OR.sup.3).sub.4-m (X).sub.m, wherein R.sup.1, R.sup.2 and R.sup.3 individually represent an alkyl or aryl group, X a hydroxyl group or a halogen atom, and n and m 0, 1, 2 or 3 and 0, 1, 2, 3 or 4, respectively.

17.

发明申请
INTERLAYER INSULATING FILM, WIRING STRUCTURE, AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：层间绝缘膜，接线结构及其制造方法

公开(公告)号：US20110127075A1

公开(公告)日：2011-06-02

申请号：US12673543

申请日：2008-08-14

申请人： Tadahiro Ohmi , Takaaki Matsuoka , Atsutoshi Inokuchi , Kohei Watanuki , Tadashi Koike , Tatsuhiko Adachi

发明人： Tadahiro Ohmi , Takaaki Matsuoka , Atsutoshi Inokuchi , Kohei Watanuki , Tadashi Koike , Tatsuhiko Adachi

IPC分类号： H05K1/11 , H05K3/46 , H05K3/36 , H05K1/00

CPC分类号： H01L23/5329 , H01L21/0212 , H01L21/02126 , H01L21/022 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3121 , H01L21/316 , H01L21/76807 , H01L21/76819 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/7684 , H01L21/76897 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00

摘要： An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH3)nSiO2-n/2)x(SiO2)1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.

摘要翻译： 包含介电常数（k）为2.5或更小并由通式（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x表示的一种或两种以上的氧化物的绝缘涂膜，其中 n = 1〜3，x＆lt; 1; 1）用于形成层间绝缘膜。通过旋涂施加的绝缘涂膜是平坦的，没有反射下面的不均匀，并且热处理膜在Ra中的表面粗糙度为1nm以下，P-V值为20nm以下。包含绝缘涂膜的层间绝缘膜可以具有布线结构和仅通过蚀刻形成的电极，而不需要CMP工艺。