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40 条记录 (耗时 0.044 秒)

    Superconducting device
    14.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5442196A

    公开(公告)日：1995-08-15

    申请号：US201410

    申请日：1994-02-24

    申请人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    发明人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    IPC分类号： H01L21/82 ,  H01L39/22

    CPC分类号： H01L39/228 ,  H01L21/82

    摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译： 一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。 并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

    Oxide-superconduction grain boundary tunneling device
    15.
    发明授权
    Oxide-superconduction grain boundary tunneling device 失效
    氧化物超导晶界隧道装置

    公开(公告)号：US5424281A

    公开(公告)日：1995-06-13

    申请号：US9082

    申请日：1993-01-26

    申请人： Yoshinobu Tarutani ,  Ushio Kawabe

    发明人： Yoshinobu Tarutani ,  Ushio Kawabe

    IPC分类号： H01L39/22 ,  H01L39/24 ,  H01B12/00

    CPC分类号： H01L39/225 ,  H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/776

    摘要： An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译： 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上，并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成，并且由元素F，Cl，Br，I，C，O，S，P或N的任何材料构成，由这些元素组成的混合物和含 这种元素，该材料被引入晶粒边界附近和/或晶粒间隙附近。

    Superconducting device
    16.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5126801A

    公开(公告)日：1992-06-30

    申请号：US412201

    申请日：1989-09-25

    申请人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    发明人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    IPC分类号： H01L21/82 ,  H01L39/22

    CPC分类号： H01L39/228 ,  H01L21/82

    摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. In an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is incredible by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译： 一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。 在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布，增益是令人难以置信的。

    Superconducting photodetector
    17.
    发明授权
    Superconducting photodetector 失效
    超导光电探测器

    公开(公告)号：US4843446A

    公开(公告)日：1989-06-27

    申请号：US246926

    申请日：1988-09-19

    申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Shinya Kominami

    发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Shinya Kominami

    IPC分类号： H01L31/08 ,  H01L31/113 ,  H01L39/22

    CPC分类号： H01L31/113 ,  H01L31/08 ,  H01L39/228

    摘要： A photodetector which operates at a cryogenic temperature by utilizing superconductivity is disclosed. A plurality of mutually spaced-apart superconducting layers are formed in such a manner as to be in contact with a semiconductor layer at least one of the surfaces of which is an incidence surface of light, and means capable of accumulating carriers in the semiconductor layer is disposed.A photodetector having high performance can thus be obtained and can be used as an interface of a system at a cryogenic temperature.

    摘要翻译： 公开了一种通过利用超导性在低温下工作的光电检测器。 多个相互间隔开的超导层形成为与半导体层接触，半导体层的至少一个表面是光的入射面，并且能够在半导体层中积聚载流子的装置是 处置。 因此可以获得具有高性能的光电检测器，并且可以用作系统在低温温度下的界面。

    Superconducting device
    18.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5311036A

    公开(公告)日：1994-05-10

    申请号：US875431

    申请日：1992-04-29

    申请人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    发明人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    IPC分类号： H01L21/82 ,  H01L39/22

    CPC分类号： H01L39/228 ,  H01L21/82

    摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译： 一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。 并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

    Oxide-superconducting tunneling device formed on a submicron recess in the substrate
    19.
    发明授权
    Oxide-superconducting tunneling device formed on a submicron recess in the substrate 失效
    形成在衬底中的亚微米凹槽上的氧化物 - 超导隧穿装置

    公开(公告)号：US5198413A

    公开(公告)日：1993-03-30

    申请号：US790085

    申请日：1991-11-13

    申请人： Yoshinobu Tarutani ,  Ushio Kawabe

    发明人： Yoshinobu Tarutani ,  Ushio Kawabe

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/225 ,  H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/776

    摘要： An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译： 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上，并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成，并且由元素F，Cl，Br，I，C，O，S，P或N的任何材料构成，由这些元素组成的混合物和含 这种元素，该材料被引入晶粒边界附近和/或晶粒间隙附近。

    Superconducting current detecting circuit employing DC flux parametron circuit
    20.
    发明授权
    Superconducting current detecting circuit employing DC flux parametron circuit 失效
    采用直流通量参数电路的超导电流检测电路

    公开(公告)号：US4866373A

    公开(公告)日：1989-09-12

    申请号：US291338

    申请日：1988-12-28

    申请人： Yutaka Harada ,  Eiichi Goto ,  Ushio Kawabe ,  Nobuo Miyamoto ,  Hideaki Nakane ,  Mutsuko Hatano

    发明人： Yutaka Harada ,  Eiichi Goto ,  Ushio Kawabe ,  Nobuo Miyamoto ,  Hideaki Nakane ,  Mutsuko Hatano

    IPC分类号： G01R17/06 ,  G01R19/00 ,  G01R19/15 ,  G01R19/257

    CPC分类号： G01R19/257 ,  G01R17/06 ,  G01R19/0092 ,  G01R19/15 ,  Y10S505/827 ,  Y10S505/845

    摘要： A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.

    摘要翻译： 一种超导电流检测电路，包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路，从而产生与输入激励信号同步的脉冲， 所述脉冲根据所述输入电流和所述参考电流之间的差异而变化，所述脉冲具有取决于所述差的极性的正值或负值，所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置 对应于响应于脉冲极性的脉冲数，使得参考电流产生电路产生与输入电流一致的参考电流。