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1.发明授权
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译： 超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。
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公开(公告)号：US06069369A
公开(公告)日：2000-05-30
申请号：US957732
申请日：1997-10-24
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译： 超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。
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3.发明授权High Tc superconducting device with weak link between two superconducting electrodes 失效具有两个超级电极之间的弱连接的高TC超导体器件
公开(公告)号：US5126315A
公开(公告)日：1992-06-30
申请号：US155806
申请日：1988-02-16
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
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公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译： 超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。
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公开(公告)号：US5552375A
公开(公告)日：1996-09-03
申请号：US192573
申请日：1994-02-07
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译： 公开了形成超导体的方法，包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流经该超导体的电流的方向。
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公开(公告)号：US5250506A
公开(公告)日：1993-10-05
申请号：US647234
申请日：1991-01-29
申请人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
发明人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
CPC分类号： H01L39/225 , H01L39/146
摘要： A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.
摘要翻译： 一种超导元件，至少包括由氧化物超导体材料构成的第一和第二超导电极以及由位于第一和第二超导电极之间并与第一和第二超导电极相邻设置的氧化物半导体材料构成的半导体膜，其中 半导体膜由包含除Pr，Ba和Cu之外的稀土元素作为主要成分的氧化物或包含预定量的Pr以外的稀土元素的氧化物形成，预定量的Pr，Ba和Cu作为主要成分 元件。 非常精细的尺寸不再需要使用现有的精细制造技术进行制造。
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公开(公告)号：US4921834A
公开(公告)日：1990-05-01
申请号：US149557
申请日：1988-01-28
申请人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
发明人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
CPC分类号： H01L39/2419 , C04B35/4504 , H01L39/126 , Y10S505/729
摘要： An oxide-superconductor improved so as to have a high critical temperature (T.sub.c) comprises an oxide having a K.sub.2 NiF.sub.4 crystalline structure similar to a perovskite crystalline structure and represented by the following formula:(Ba.sub.x Sr.sub.z La.sub.1-x-z).sub.2 Cu.sub.1-w Ag.sub.w O.sub.4(1-y)wherein 0.1
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公开(公告)号：US5256897A
公开(公告)日：1993-10-26
申请号：US729867
申请日：1991-07-10
申请人： Haruhiro Hasegawa , Toshiyuki Aida , Toshikazu Nishino , Mutsuko Hatano , Hideaki Nakane , Tokuumi Fukazawa
发明人： Haruhiro Hasegawa , Toshiyuki Aida , Toshikazu Nishino , Mutsuko Hatano , Hideaki Nakane , Tokuumi Fukazawa
IPC分类号： H01L39/22 , H01L29/161 , H01L29/48 , H01L29/56
CPC分类号： H01L39/22 , H01L39/228
摘要： An oxide superconducting device has a junction structure composed of at least one oxide superconductor and at least one insulator in which carriers have been generated. As the insulator in which carriers have been generated, there can be used, for example, SrTiO.sub.3 doped with Nb. With such a device, rectifying characteristics can be attained in the junction.
摘要翻译： 氧化物超导装置具有由至少一个氧化物超导体和至少一个其中已经产生载流子的绝缘体组成的结结构。 作为已经生成载流子的绝缘体，可以使用例如掺杂有Nb的SrTiO 3。 利用这种装置，可以在接合处获得整流特性。
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9.发明授权
公开(公告)号：US5096882A
公开(公告)日：1992-03-17
申请号：US178905
申请日：1988-04-07
申请人： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
发明人： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
IPC分类号： C01G3/00 , C01B13/14 , C01G1/00 , C04B35/00 , C04B35/45 , C04B41/80 , H01B12/00 , H01B13/00 , H01F6/06 , H01F41/04 , H01L39/12 , H01L39/14 , H01L39/24
CPC分类号： H01L39/2464 , H01F41/048 , H01F6/06 , H01L39/143 , H01L39/249 , H01L39/2496 , Y10S505/725 , Y10S505/73
摘要： A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.
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公开(公告)号：US5380704A
公开(公告)日：1995-01-10
申请号：US113006
申请日：1993-08-30
申请人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
发明人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
CPC分类号： H01L29/78696 , H01L29/437 , H01L29/4908 , H01L29/78645 , H01L29/7869 , H01L39/146
摘要： Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.
摘要翻译： 本发明公开了一种超导场效应晶体管（FET），其至少具有由氧化物正导体膜形成的有源区，由氧化物超导体的膜形成的多个电极，以及控制在氧化物超导体之间流动的电流的装置 电极通过有源区。 具有比常规超导装置更大的电极距离，其可以通过光刻而容易地制造，而不需要采用特殊技术。
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