公开(公告)号：US20210183944A1

公开(公告)日：2021-06-17

申请号：US16746974

申请日：2020-01-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Wu ,  Jian-Jhong Chen ,  Po-Chun Yang ,  Jhen-Siang Wu ,  Yung-Ching Hsieh ,  Bo-Chang Li ,  Jen-Yu Wang ,  Cheng-Tung Huang

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a first magnetic tunneling junction (MTJ) pattern on a substrate, a second MTJ pattern adjacent to the first MTJ pattern, and a third MTJ pattern between the first MTJ pattern and the second MTJ pattern. Preferably, the first MTJ pattern, the second MTJ pattern, and the third MTJ pattern constitute a staggered arrangement.