公开(公告)号：US11545447B2

公开(公告)日：2023-01-03

申请号：US17394394

申请日：2021-08-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Hsuan Chang ,  Ming-Hua Tsai ,  Chin-Chia Kuo

IPC: H01L23/00 ,  H01L21/762 ,  H01L27/06 ,  H01L49/02 ,  H01L23/522 ,  H01L27/08 ,  H01L21/3105

Abstract: A semiconductor device includes a substrate, a first isolation structure, a second isolation structure and a dummy pattern. The substrate includes a first part surrounding a second part at a top view. The first isolation structure is disposed between the first part and the second part, to isolate the first part from the second part. The second isolation structure is disposed at at least one corner of the first part. The dummy pattern is disposed on the second isolation structure. The present invention also provides a method of forming said semiconductor device.

公开(公告)号：US20210366843A1

公开(公告)日：2021-11-25

申请号：US17394394

申请日：2021-08-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Hsuan Chang ,  Ming-Hua Tsai ,  Chin-Chia Kuo

IPC: H01L23/00 ,  H01L49/02 ,  H01L23/522 ,  H01L21/762 ,  H01L27/06 ,  H01L27/08

Abstract: A semiconductor device includes a substrate, a first isolation structure, a second isolation structure and a dummy pattern. The substrate includes a first part surrounding a second part at a top view. The first isolation structure is disposed between the first part and the second part, to isolate the first part from the second part. The second isolation structure is disposed at at least one corner of the first part. The dummy pattern is disposed on the second isolation structure. The present invention also provides a method of forming said semiconductor device.