公开(公告)号：US09881803B2

公开(公告)日：2018-01-30

申请号：US15215794

申请日：2016-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

IPC: H01L21/306 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.

公开(公告)号：US20150129795A1

公开(公告)日：2015-05-14

申请号：US14078797

申请日：2013-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

IPC: C09G1/02 ,  C09G1/04

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.

Abstract translation: 本公开涉及一种化学机械抛光（CMP）浆料组合物，其提供高金属与电介质材料的选择性以及低的金属凹陷形成速率。 在一些实施方案中，所公开的浆料组合物具有氧化剂和蚀刻抑制剂。 氧化剂具有一个或多个氧分子的化合物。 蚀刻抑制剂具有氮氧化合物。 蚀刻抑制剂降低金属和电介质材料（例如，氧化物）去除的速率，但是以降低介电材料去除速率更大的方式这样做，以便为浆料组合物提供高金属（例如， ，锗）到介电材料去除选择性和低的金属凹陷形成速率。