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    Chemical mechanical polishing method using slurry composition containing N-oxide compound
    1.
    发明授权
    Chemical mechanical polishing method using slurry composition containing N-oxide compound 有权
    使用含有N-氧化物的浆料组合物的化学机械抛光方法

    公开(公告)号：US09416297B2

    公开(公告)日：2016-08-16

    申请号：US14078797

    申请日：2013-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

    IPC: C09G1/02 ,  C09G1/04

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

    Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.

    Abstract translation: 本公开涉及一种化学机械抛光（CMP）浆料组合物，其提供高金属与电介质材料的选择性以及低的金属凹陷形成速率。 在一些实施方案中，所公开的浆料组合物具有氧化剂和蚀刻抑制剂。 氧化剂具有一个或多个氧分子的化合物。 蚀刻抑制剂具有氮氧化合物。 蚀刻抑制剂降低金属和电介质材料（例如，氧化物）去除的速率，但是以降低介电材料去除速率更大的方式这样做，以便为浆料组合物提供高金属（例如， ，锗）到介电材料去除选择性和低的金属凹陷形成速率。

    POLISHING COMPOSITION
    2.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20160208141A1

    公开(公告)日：2016-07-21

    申请号：US14597737

    申请日：2015-01-15

    Applicant: UWiZ Technology Co., Ltd.

    Inventor： Yun Lung Ho ,  Chun Chieh Lee ,  Song Yuan Chang ,  Ming Hui Lu ,  Ming Che Ho

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09G1/00 ,  H01L21/3212 ,  H01L21/3213

    Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.

    Abstract translation: 本文提供了包含磨粒，具有六价钼或五价钒的化合物，阴离子添加剂，卤素氧化物或其盐以及载体溶剂的抛光组合物。 抛光组合物适用于SiGe，Si和SiO2基板的化学机械抛光工艺。 具有六价钼或五价的化合物可以有效地提高SiGe和Si衬底的去除率，同时提高SiGe和Si相对于SiO2的抛光选择性。

    SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING OF GE-BASED MATERIALS AND DEVICES
    3.
    发明申请
    SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING OF GE-BASED MATERIALS AND DEVICES 有权
    基于GE的材料和设备的化学机械抛光的浆料组合物

    公开(公告)号：US20160071737A1

    公开(公告)日：2016-03-10

    申请号：US14480046

    申请日：2014-09-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  UWIZ TECHNOLOGY CO., LTD.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Song-Yuan Chang ,  Teng-Chun Tsai

    IPC: H01L21/306 ,  B24B37/04 ,  C09G1/02 ,  H01L21/67 ,  H01L29/66 ,  C09G1/04

    CPC classification number: C09G1/02 ,  B24B37/044 ,  B24B37/20 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/67075 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78684

    Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

    Abstract translation: 提供Ge或SiGe至介电材料的高选择性的CMP浆料组合物，Ge或SiGe凹陷形成的低速率包括氧化剂和除锗速率增强剂，其包括甲基吡啶化合物和甲基吡啶衍生物化合物中的至少一种 。 在一些实例中，浆料组合物还包括蚀刻抑制剂。 在一些情况下，浆料组合物可以包括研磨剂，表面活性剂，有机络合剂，螯合剂，有机或无机酸，有机或无机碱，腐蚀抑制剂或缓冲剂。 浆料组合物可以分布在设置在被配置为旋转的台板上的抛光垫的表面上。 此外，构造成容纳基板的工件载体可以使基板与旋转的抛光垫接触，从而利用浆料组合物抛光基板。

    Polishing composition
    10.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US09493678B2

    公开(公告)日：2016-11-15

    申请号：US14597737

    申请日：2015-01-15

    Applicant: UWiZ Technology Co., Ltd.

    Inventor： Yun Lung Ho ,  Chun Chieh Lee ,  Song Yuan Chang ,  Ming Hui Lu ,  Ming Che Ho

    IPC: C09G1/00 ,  C09G1/02 ,  H01L21/321 ,  H01L21/3213

    CPC classification number: C09G1/02 ,  C09G1/00 ,  H01L21/3212 ,  H01L21/3213

    Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.

    Abstract translation: 本文提供了包含磨粒，具有六价钼或五价钒的化合物，阴离子添加剂，卤素氧化物或其盐以及载体溶剂的抛光组合物。 抛光组合物适用于SiGe，Si和SiO2基板的化学机械抛光工艺。 具有六价钼或五价的化合物可以有效地提高SiGe和Si衬底的去除率，同时提高SiGe和Si相对于SiO2的抛光选择性。

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