OVERLAY OPERATION METHOD AND OVERLAY CONTROL METHOD
    11.
    发明申请
    OVERLAY OPERATION METHOD AND OVERLAY CONTROL METHOD 有权
    覆盖操作方法和覆盖控制方法

    公开(公告)号:US20160313652A1

    公开(公告)日:2016-10-27

    申请号:US14696488

    申请日:2015-04-27

    CPC classification number: G03F7/70633 G03F1/70

    Abstract: An overlay operation method and an overlay control method are disclosed. A first mark and a second mark are identified on a substrate, wherein the first mark and the second mark are formed by a process in combination with using a photomask. Next, a first measurement is performed to obtain an offset between the first mark and the second mark in a direction. Then, an operation is performed to judge whether the offset is in a range from a pre-determined offset minus a deviation to the pre-determined offset plus the deviation, wherein the pre-determined offset is determined by the photomask.

    Abstract translation: 公开了覆盖操作方法和覆盖控制方法。 在基板上识别第一标记和第二标记,其中第一标记和第二标记通过与使用光掩模组合的方法形成。 接下来,执行第一测量以在方向上获得第一标记和第二标记之间的偏移。 然后,执行操作以判断偏移是否在从预定偏移减去偏差到预定偏移加上偏差的范围内,其中预定偏移由光掩模确定。

    OVERLAY MARKS AND SEMICONDUCTOR PROCESS USING THE OVERLAY MARKS
    12.
    发明申请
    OVERLAY MARKS AND SEMICONDUCTOR PROCESS USING THE OVERLAY MARKS 有权
    使用覆盖标志的覆盖标记和半导体工艺

    公开(公告)号:US20160307850A1

    公开(公告)日:2016-10-20

    申请号:US14687912

    申请日:2015-04-15

    CPC classification number: H01L29/785 G03F7/70633 G03F7/70683

    Abstract: An overlay mark for determining the alignment between two separately generated patterns formed along with two successive layers above a substrate is provided in the present invention, wherein both the substrate and the overlay mark include at least two pattern zones having periodic structures with different orientations, and the periodic structures of the overlay mark are orthogonally overlapped with the periodic structures of the substrate.

    Abstract translation: 在本发明中提供了用于确定在衬底上方与两个连续层形成的两个单独产生的图案之间的对准的覆盖标记,其中衬底和覆盖标记都包括具有不同取向的周期性结构的至少两个图案区域,以及 覆盖标记的周期性结构与衬底的周期性结构正交地重叠。

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