公开(公告)号：US10793426B2

公开(公告)日：2020-10-06

申请号：US16107795

申请日：2018-08-21

Applicant: United Microelectronics Corp.

Inventor： Chang-Sheng Hsu ,  Chih-Fan Hu ,  Chia-Wei Lee ,  En Chan Chen ,  Shih-Wei Li

IPC: B81C1/00

Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.

公开(公告)号：US20170320727A1

公开(公告)日：2017-11-09

申请号：US15146741

申请日：2016-05-04

Applicant: United Microelectronics Corp.

Inventor： Chang-Sheng Hsu ,  Chih-Fan Hu ,  Chia-Wei Lee ,  En Chan Chen ,  Shih-Wei Li

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2201/0176 ,  B81C2203/036 ,  B81C2203/0735

Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.