-
公开(公告)号：US10793426B2
公开(公告)日：2020-10-06
申请号：US16107795
申请日：2018-08-21
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC: B81C1/00
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
-
公开(公告)号：US20170320727A1
公开(公告)日：2017-11-09
申请号：US15146741
申请日：2016-05-04
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
CPC classification number: B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2201/0176 , B81C2203/036 , B81C2203/0735
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
-
公开(公告)号：US20230343379A1
公开(公告)日：2023-10-26
申请号：US17744746
申请日：2022-05-16
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Cheng-Tung Huang , Jen-Yu Wang , Po-Chun Yang , Yi-Ting Wu , Yung-Ching Hsieh , Jian-Jhong Chen , Chia-Wei Lee
IPC: G11C11/16
CPC classification number: G11C11/1673
Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.
-
公开(公告)号：US20180354783A1
公开(公告)日：2018-12-13
申请号：US16107795
申请日：2018-08-21
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC: B81C1/00
CPC classification number: B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2201/0176 , B81C2203/036 , B81C2203/0735
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
-
公开(公告)号：US20180057354A1
公开(公告)日：2018-03-01
申请号：US15293855
申请日：2016-10-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
CPC classification number: B81B7/007 , B81B3/0081 , B81B2201/0214 , B81B2201/0292 , B81B2207/012 , B81B2207/07 , G01N27/128
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.
-
Patent Agency Ranking
公开(公告)号：US11955154B2
公开(公告)日：2024-04-09
申请号：US17744746
申请日：2022-05-16
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Cheng-Tung Huang , Jen-Yu Wang , Po-Chun Yang , Yi-Ting Wu , Yung-Ching Hsieh , Jian-Jhong Chen , Chia-Wei Lee
CPC classification number: G11C11/1673
Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.
-
公开(公告)号：US20200216304A1
公开(公告)日：2020-07-09
申请号：US16824153
申请日：2020-03-19
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.
-
公开(公告)号：US10087072B2
公开(公告)日：2018-10-02
申请号：US15146741
申请日：2016-05-04
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC: H01L23/48 , H01L23/528 , H01L23/66 , H01L29/66 , B81C1/00
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
-
公开(公告)号：US11345590B2
公开(公告)日：2022-05-31
申请号：US17097175
申请日：2020-11-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.
-
公开(公告)号：US20210061643A1
公开(公告)日：2021-03-04
申请号：US17097175
申请日：2020-11-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.033 seconds)
