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公开(公告)号：US20180354783A1
公开(公告)日：2018-12-13
申请号：US16107795
申请日：2018-08-21
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC: B81C1/00
CPC classification number: B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2201/0176 , B81C2203/036 , B81C2203/0735
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
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公开(公告)号：US20180057354A1
公开(公告)日：2018-03-01
申请号：US15293855
申请日：2016-10-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
CPC classification number: B81B7/007 , B81B3/0081 , B81B2201/0214 , B81B2201/0292 , B81B2207/012 , B81B2207/07 , G01N27/128
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.
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公开(公告)号：US20200216304A1
公开(公告)日：2020-07-09
申请号：US16824153
申请日：2020-03-19
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.
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公开(公告)号：US09905711B2
公开(公告)日：2018-02-27
申请号：US15099610
申请日：2016-04-15
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Tzung-Han Tan , Chang-Sheng Hsu , Meng-Jia Lin , Te-Huang Chiu
IPC: H01L31/024 , H01L31/0232 , H01L31/0352 , H01L31/105 , H01L31/18 , H01L31/107
CPC classification number: H01L31/024 , H01L31/02327 , H01L31/035281 , H01L31/105 , H01L31/107 , H01L31/18 , H01L31/1804 , Y02E10/547
Abstract: An avalanche photodetector device includes a substrate having a front side and a back side, an avalanche photo detector structure disposed on the front side of the substrate, a plurality of heat sinks disposed on the back side of the substrate, and a plurality of reflecting islands disposed on the back side of the substrate.
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公开(公告)号：US09668064B2
公开(公告)日：2017-05-30
申请号：US14630620
申请日：2015-02-24
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chang-Sheng Hsu , Yuan-Sheng Lin , Wei-Hua Fang , Kuan-Yu Wang , Yan-Da Chen
CPC classification number: H04R23/00 , B81B2201/0257 , B81B2203/0127 , B81C1/00182 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A microelectromechanical system microphone includes a semiconductor-on-insulator structure, a plurality of resistors, a plurality of first openings, and a vent hole. The semiconductor-on-insulator structure includes a substrate, an insulating layer and a semiconductor layer. The resistors are formed in the semiconductor layer, the first openings are formed in the semiconductor layer, and the vent hole is formed in the insulating layer and the substrate. The resistors are connected to each other to form a resistor pattern, and the first openings are all formed within the resistor pattern.
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Patent Agency Ranking
公开(公告)号：US10793426B2
公开(公告)日：2020-10-06
申请号：US16107795
申请日：2018-08-21
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC: B81C1/00
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
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公开(公告)号：US20170320727A1
公开(公告)日：2017-11-09
申请号：US15146741
申请日：2016-05-04
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
CPC classification number: B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2201/0176 , B81C2203/036 , B81C2203/0735
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
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公开(公告)号：US11345590B2
公开(公告)日：2022-05-31
申请号：US17097175
申请日：2020-11-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.
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公开(公告)号：US20210061643A1
公开(公告)日：2021-03-04
申请号：US17097175
申请日：2020-11-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.
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公开(公告)号：US20180027337A1
公开(公告)日：2018-01-25
申请号：US15246561
申请日：2016-08-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chang-Sheng Hsu , Weng-Yi Chen , En-Chan Chen , Shih-Wei Li , Guo-Chih Wei
CPC classification number: H04R17/025 , B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C2201/013 , H04R1/06 , H04R7/04 , H04R7/20 , H04R17/02 , H04R19/005 , H04R31/003 , H04R31/006 , H04R2201/003
Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.
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