公开(公告)号：US20190057738A1

公开(公告)日：2019-02-21

申请号：US16048350

申请日：2018-07-30

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Ju-Chieh Cheng ,  Tsung-Huan Tsai ,  I-Hsien Tseng

IPC: G11C13/00

Abstract: A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory cell; applying a first disturbance voltage on the memory cell, and acquiring a second reading current of the memory cell; and determining to apply a second set voltage or a second disturbance voltage on the memory cell according to a magnitude relationship between the first reading current and the second reading current. An absolute value of the first disturbance voltage is smaller than an absolute value of a reset voltage, and an absolute value of the second disturbance voltage is smaller than an absolute value of the second set voltage. In addition, a resistive memory storage apparatus is also provided.

公开(公告)号：US09627059B2

公开(公告)日：2017-04-18

申请号：US14977667

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Po-Wei Huang

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

公开(公告)号：US09620208B2

公开(公告)日：2017-04-11

申请号：US15190569

申请日：2016-06-23

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Tsung-Huan Tsai ,  Chia-Hung Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng

IPC: G11C11/00 ,  G11C13/00 ,  G11C5/14

CPC classification number: G11C13/0069 ,  G11C5/147 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0045 ,  G11C2013/0066

Abstract: A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.

公开(公告)号：US20160276027A1

公开(公告)日：2016-09-22

申请号：US14977667

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Po-Wei Huang

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

Abstract translation: 提供了一种用于其电阻式存储单元的电阻式存储器和数据写入方法。 该方法包括：接收和解码用于产生解码结果的列地址信号，并将字线电压提供给电阻存储器单元的字线; 向电阻存储单元的位线和源极线之一提供恒定电流，以及将参考接地电压耦合到电阻存储单元的位线和源极线中的另一个。