公开(公告)号：US20090020414A1

公开(公告)日：2009-01-22

申请号：US12234699

申请日：2008-09-21

申请人： Wen-Kuang Tsao ,  Chien-Yu Chen

发明人： Wen-Kuang Tsao ,  Chien-Yu Chen

IPC分类号： C23C14/34

CPC分类号： B32B7/02

摘要： A method of eliminating electrostatic charges generated from friction between a carrier and a substrate is provided. A substrate having a front surface and a back surface is provided. A transparent conductive layer is formed on the back surface by sputtering or evaporation process, wherein the electrostatic charges accumulated on the carrier are eliminated through the transparent conductive layer when the anti-static substrate is in contact with the carrier.

摘要翻译： 提供了消除由载体和基板之间的摩擦产生的静电电荷的方法。 提供具有前表面和后表面的基板。 通过溅射或蒸发处理在背面形成透明导电层，其中当防静电衬底与载体接触时，通过透明导电层消除累积在载体上的静电电荷。

公开(公告)号：US20050006645A1

公开(公告)日：2005-01-13

申请号：US10605403

申请日：2003-09-29

申请人： Yu-Chou Lee ,  Wen-Kuang Tsao

发明人： Yu-Chou Lee ,  Wen-Kuang Tsao

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78669

摘要： A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.

摘要翻译： 对薄膜晶体管（TFT）的制造方法进行说明。 在基板上形成MoNb栅极，在覆盖栅极的基板上形成绝缘层。 在栅极上方的绝缘层上形成沟道层，在沟道层上形成源极/漏极，构成TFT。 由于栅极由MoNb层构成，所以可以降低其接触电阻。

公开(公告)号：US20070048530A1

公开(公告)日：2007-03-01

申请号：US11162079

申请日：2005-08-29

申请人： Wen-Kuang Tsao ,  Chien-Yu Chen

发明人： Wen-Kuang Tsao ,  Chien-Yu Chen

IPC分类号： B32B17/06 ,  B32B19/00

CPC分类号： B32B7/02

摘要： An anti-electrostatic discharge substrate adapted to eliminate electrostatic charges generated from friction between a carrier and the anti-electrostatic discharge substrate is provided. The anti-electrostatic discharge substrate includes a substrate having a front surface and a back surface; and a conductive layer on the back surface, wherein the electrostatic charges accumulated on the carrier are eliminated through the conductive layer when the substrate is in contact with the carrier.

摘要翻译： 提供了适于消除由载体和抗静电放电基板之间的摩擦产生的静电电荷的抗静电放电基板。 防静电放电衬底包括具有前表面和后表面的衬底; 以及背面上的导电层，其中当衬底与载体接触时，通过导电层消除积聚在载体上的静电电荷。

公开(公告)号：US06921698B2

公开(公告)日：2005-07-26

申请号：US10605403

申请日：2003-09-29

申请人： Yu-Chou Lee ,  Wen-Kuang Tsao

发明人： Yu-Chou Lee ,  Wen-Kuang Tsao

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78669

摘要： A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.

摘要翻译： 对薄膜晶体管（TFT）的制造方法进行说明。 在基板上形成MoNb栅极，在覆盖栅极的基板上形成绝缘层。 在栅极上方的绝缘层上形成沟道层，在沟道层上形成源极/漏极，构成TFT。 由于栅极由MoNb层构成，所以可以降低其接触电阻。