METHOD FOR FABRICATING GAN FIELD EMITTER ARRAYS
    12.
    发明申请
    METHOD FOR FABRICATING GAN FIELD EMITTER ARRAYS 有权
    用于制作GAN场发射阵列的方法

    公开(公告)号:US20030104643A1

    公开(公告)日:2003-06-05

    申请号:US09998336

    申请日:2001-12-03

    CPC classification number: H01J1/3042 H01J9/025

    Abstract: An improved nanotip structure and method for forming the nanotip structure and a display system using the improved nanotip structure is described. The described nanotip is formed from a semiconductor having a crystalline structure such as gallium nitride. The crystalline structure preferably forms dislocations oriented in the direction of the nanotips. One method of forming the nanotip structure uses the relatively slow etching rates that occur around the dislocations compared to the faster etch rates that occur in other parts of the semiconductor structure. The slower etching around dislocations enables the formation of relatively high aspect ratio nanotips in the dislocation area.

    Abstract translation: 描述了用于形成纳米尖端结构的改进的纳米尖端结构和方法以及使用改进的纳米尖端结构的显示系统。 所描述的纳米尖端由具有诸如氮化镓的晶体结构的半导体形成。 晶体结构优选地形成在纳米尖端方向上取向的位错。 与在半导体结构的其它部分中发生的更快的蚀刻速率相比,形成纳米尖端结构的一种方法使用在位错周围发生的相对慢的蚀刻速率。 在位错周围较慢的蚀刻使得能够在位错区域中形成相对高的纵横比的纳米尖端。

    LARGE AREA MICRO-STRUCTURE TEMPLATE FOR CREATION OF CLOSELY PACKED ARRAYS
    13.
    发明申请
    LARGE AREA MICRO-STRUCTURE TEMPLATE FOR CREATION OF CLOSELY PACKED ARRAYS 有权
    用于创建封闭式阵列的大面积微结构模板

    公开(公告)号:US20020186452A1

    公开(公告)日:2002-12-12

    申请号:US09880152

    申请日:2001-06-11

    CPC classification number: G02B26/026 G02B5/128 G02B5/136

    Abstract: A micro-structure template for fabricating ordered arrays of particles includes a top surface and a bottom surface, with the top surface having a plurality of closely-spaced depressions. Particles are disposed in the closely-spaced depressions to form at least one layer of particles.

    Abstract translation: 用于制造有序粒子阵列的微结构模板包括顶表面和底表面,顶表面具有多个紧密间隔的凹陷。 颗粒被布置在紧密间隔的凹陷中以形成至少一层颗粒。

Patent Agency Ranking