Electron Emitting Construct Configured with Ion Bombardment Resistant
    2.
    发明申请
    Electron Emitting Construct Configured with Ion Bombardment Resistant 审中-公开
    配电离子轰击电子发射结构

    公开(公告)号:US20170004949A1

    公开(公告)日:2017-01-05

    申请号:US15038737

    申请日:2014-11-26

    申请人: NANOX IMAGING PLC

    摘要: An electron emitting construct design of an x-ray emitter device is disclosed configured to facilitate radiation in the X-ray spectrum and further relates to preventing a cold cathode from being damaged by ion bombardment in high-voltage applications. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target operable to attract electron beam to an associated focal spot, wherein the generated ions are accelerated along a trajectory perpendicular to the electric field in parallel to the surface of the electron anode target. More specifically, the present invention relates to realizing a robust cold cathode to avoid ion bombardments damages in high-voltage applications, by means of setting non-emitter zone surrounded by or set between the emitter areas. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.

    摘要翻译: 公开了一种x射线发射器件的电子发射结构设计,其被配置为便于X射线光谱中的辐射,并且还涉及防止冷阴极在高压应用中被离子轰击所损坏。 由发射结构发射的电子束通过电场聚焦并加速到电子阳极靶,可操作以将电子束吸引到相关联的焦点,其中所产生的离子沿垂直于电场的轨迹被平行于 电子阳极靶的表面。 更具体地,本发明涉及通过设置在发射极区域之间包围或设置的非发射极区域来实现坚固的冷阴极,以避免高压应用中的离子轰击损伤。 该系统还被配置为提供成角度的目标阳极或阶梯目标阳极,以进一步减少离子轰击损伤。

    Electron-emitting cold cathode device
    3.
    发明授权
    Electron-emitting cold cathode device 有权
    电子发射冷阴极器件

    公开(公告)号:US09111711B2

    公开(公告)日:2015-08-18

    申请号:US14359534

    申请日:2012-11-26

    申请人: SELEX ES S.P.A.

    摘要: One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region, one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s).

    摘要翻译: 本发明的一个或多个实施例涉及一种装置,包括:阴极,其位于阴极平面上,并且在有源区域中包括一个或多个阴极直指状端子,其主延伸方向平行于第一参考方向; 对于每个阴极端子,形成在所述阴极端子上并与所述阴极端子欧姆接触的一个或多个电子发射器; 并且位于与所述阴极平面平行且间隔开的栅极平面上的栅极电极不与阴极重叠,并且在有源区域中包括具有主延伸方向的两个或更多个栅极直指形端子 平行于第一参考方向; 其中栅极端子与所述阴极端子交错。

    Carbon nanotube fiber cathode
    4.
    发明授权
    Carbon nanotube fiber cathode 有权
    碳纳米管纤维阴极

    公开(公告)号:US08766522B1

    公开(公告)日:2014-07-01

    申请号:US13105249

    申请日:2011-05-11

    摘要: Improved field emission cathodes comprise a fiber of highly aligned and densely packed single-wall carbon nanotubes, double-wall carbon nanotubes, multi-wall carbon nanotubes, grapheme nanoribbons, carbon nanofibers, and/or carbon planar nanostructures. The fiber cathodes provide superior current carrying capacity without degradation or adverse effects under high field strength testing. The fibers also can be configured as multi-fiber field emission cathodes, and the use of low work function coatings and different tip configurations further improves their performance.

    摘要翻译: 改进的场发射阴极包括高度排列和密集堆叠的单壁碳纳米管,双壁碳纳米管,多壁碳纳米管,图形纳米带,碳纳米纤维和/或碳平面纳米结构的纤维。 纤维阴极在高场强测试下提供卓越的载流能力而不降解或不利影响。 纤维也可以配置为多纤维场发射阴极,并且使用低功函数涂层和不同尖端配置进一步提高其性能。

    Field emission devices including nanotubes or other nanoscale articles
    5.
    发明授权
    Field emission devices including nanotubes or other nanoscale articles 失效
    场致发射器件包括纳米管或其他纳米级物品

    公开(公告)号:US08456073B2

    公开(公告)日:2013-06-04

    申请号:US12474415

    申请日:2009-05-29

    IPC分类号: G01N31/00 G01N21/64

    摘要: The present invention provides devices comprising an assembly of carbon nanotubes, and related methods. In some cases, the carbon nanotubes may have enhanced alignment. Devices of the invention may comprise features and/or components which may enhance the emission of electrons and may lower the operating voltage of the devices. Using methods described herein, carbon nanotube assemblies may be manufactured rapidly, at low cost, and over a large surface area. Such devices may be useful in display applications such as field emission devices, or other applications requiring high image quality, low power consumption, and stability over a wide temperature range.

    摘要翻译: 本发明提供了包括碳纳米管组件的装置和相关方法。 在一些情况下,碳纳米管可以具有增强的对准。 本发明的装置可以包括可以增强电子发射的特征和/或部件,并且可以降低装置的工作电压。 使用本文所述的方法,碳纳米管组件可以以低成本,并且在大的表面积上快速制造。 这样的器件可用于诸如场致发射器件的显示应用,或者在宽的温度范围内需要高图像质量,低功耗和稳定性的其它应用中。

    Electron emitter structure and associated method of producing field emission displays
    6.
    发明授权
    Electron emitter structure and associated method of producing field emission displays 失效
    电子发射体结构及相关的场致发射显示方法

    公开(公告)号:US08076832B2

    公开(公告)日:2011-12-13

    申请号:US12122176

    申请日:2008-05-16

    申请人: Hiroyuki Okita

    发明人: Hiroyuki Okita

    IPC分类号: H01J1/02

    摘要: A method of forming an electron emitter structure for use in a field emission display, or as a field emission backlight for an LCD display is provided. The electron emitter structure is formed by depositing mask elements onto an laminar Al substrate, and etching the Al substrate chemically through gaps between the mask elements, such that a spikes are formed on the substrate. These spikes are then covered with an electron emitter material. The spikes can be formed with a desired pitch/height ratio.

    摘要翻译: 提供一种形成用于场致发射显示器中的电子发射器结构或用作LCD显示器的场致发射背光的方法。 通过将掩模元件沉积到层状Al衬底上并通过掩模元件之间的间隙化学蚀刻Al衬底而形成电子发射体结构,使得在衬底上形成尖峰。 然后用电子发射体材料覆盖这些尖峰。 尖峰可以以期望的俯仰/高度比形成。

    Method of operating and process for fabricating an electron source
    7.
    发明授权
    Method of operating and process for fabricating an electron source 失效
    用于制造电子源的操作和处理方法

    公开(公告)号:US07875469B2

    公开(公告)日:2011-01-25

    申请号:US12001631

    申请日:2007-12-12

    申请人: Heinz H. Busta

    发明人: Heinz H. Busta

    IPC分类号: H01L21/00

    摘要: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

    摘要翻译: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖,例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来,从杆的端部去除材料,并且绝缘层相对于场发射极层凹陷,使得在场发射极层和杆之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

    DENSE ARRAY OF FIELD EMITTERS USING VERTICAL BALLASTING STRUCTURES
    8.
    发明申请
    DENSE ARRAY OF FIELD EMITTERS USING VERTICAL BALLASTING STRUCTURES 有权
    使用垂直焊接结构的场发射体的DENSE阵列

    公开(公告)号:US20090072750A1

    公开(公告)日:2009-03-19

    申请号:US12233859

    申请日:2008-09-19

    IPC分类号: H01J1/304 H01J9/02

    CPC分类号: H01J1/3042 H01J2201/319

    摘要: A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.

    摘要翻译: 提供场发射器阵列结构。 场发射极阵列结构包括形成在半导体衬底上的多个垂直未门控晶体管结构。 半导体衬底包括多个垂直柱结构,以限定所述未门控晶体管结构。 在所述垂直非门控晶体管结构上形成多个发射极结构。 所述发射极结构中的每一个以压载方式定位在所述垂直非门控晶体管结构中的一个上,以便允许所述垂直非门控晶体管结构有效地提供具有较大饱和电流的高动态电阻。

    Method and structure of converging electron-emission source of field-emission display
    9.
    发明授权
    Method and structure of converging electron-emission source of field-emission display 失效
    场致发射显示的会聚电子发射源的方法和结构

    公开(公告)号:US07271527B2

    公开(公告)日:2007-09-18

    申请号:US11465305

    申请日:2006-08-17

    IPC分类号: H01J1/304 H01J1/62

    摘要: In a converging-type electron-emission source of a field-emission display, a substrate is provided and a silver paste is used to form a first electrode layer on the substrate by the process such as thick-film photolithography or screen-printing. A carbon nanotube is formed on the first electrode layer by thick-film photolithography or screen-printing, and a second electrode is formed on the carbon nanotube. A third electrode layer is formed on the first electrode layer around the second electrode layer by thick-film photolithography or screen-printing. The third electrode layer is higher than the second electrode layer, such that a converging exit is formed around the second electrode layer. A sintering step is performed. When the electron beam is generated, the electron beam is concentrated at the center of the converging exit to impinge a phosphor layer of an anode without causing gamut.

    摘要翻译: 在场致发射显示器的会聚型电子发射源中,提供了衬底,并且使用银膏通过诸如厚膜光刻或丝网印刷的工艺在衬底上形成第一电极层。 通过厚膜光刻或丝网印刷在第一电极层上形成碳纳米管,在碳纳米管上形成第二电极。 通过厚膜光刻或丝网印刷在第二电极层周围的第一电极层上形成第三电极层。 第三电极层高于第二电极层,使得在第二电极层周围形成会聚出口。 进行烧结步骤。 当产生电子束时,电子束集中在会聚出口的中心,以撞击阳极的磷光体层而不引起色域。