公开(公告)号：US12113332B2

公开(公告)日：2024-10-08

申请号：US18358019

申请日：2023-07-24

申请人： NICHIA CORPORATION

发明人： Masatoshi Nakagaki ,  Soichiro Miura

IPC分类号： H01S5/02355 ,  H01S5/022 ,  H01S5/0233 ,  H01S5/0239 ,  H01S5/40 ,  H01S5/02345

CPC分类号： H01S5/0239 ,  H01S5/022 ,  H01S5/0233 ,  H01S5/02355 ,  H01S5/40 ,  H01S5/4031 ,  H01S5/02345

摘要： A light emitting device includes first and second semiconductor laser elements, first and second light-reflective members, and a basal part. The light emitted from the first semiconductor laser element irradiates a first light-reflective surface of the first light-reflective member at a first position. The light emitted from the second semiconductor laser element irradiates a second light-reflective surface of the second light-reflective member at a second position. A height of the first position is different from a height of the second position. With respect to a virtual axis extending along the prescribed direction, the first position and the second position have the same coordinates. A mounting position of the first light-reflective member and a mounting position of the second light-reflective member are different with respect to the prescribed direction.

公开(公告)号：US12100928B2

公开(公告)日：2024-09-24

申请号：US18310106

申请日：2023-05-01

申请人： NICHIA CORPORATION ,  SHINKO ELECTRIC INDUSTRIES CO., LTD.

发明人： Takuya Hashimoto ,  Eiichiro Okahisa ,  Katsuya Nakazawa ,  Shigeru Matsushita ,  Sumio Uehara ,  Suguru Kobayashi ,  Kazuhito Yumoto

IPC分类号： H01S5/0235 ,  H01S5/02208 ,  H01S5/02255 ,  H01S5/02355 ,  H01S5/024 ,  H01S5/40

CPC分类号： H01S5/0235 ,  H01S5/02208 ,  H01S5/02355 ,  H01S5/02469 ,  H01S5/40 ,  H01S5/02255

摘要： A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.

公开(公告)号：US20240275126A1

公开(公告)日：2024-08-15

申请号：US18413072

申请日：2024-01-16

申请人： Sumitomo Electric Industries, Ltd.

发明人： Hiromi NAKANISHI

IPC分类号： H01S5/02326 ,  H01S5/024 ,  H01S5/40

CPC分类号： H01S5/02326 ,  H01S5/024 ,  H01S5/40

摘要： An optical module includes a first laser diode, a first submount, a first substrate, a first transmission window, a first cap hermetically sealed on the first substrate in such a manner as to cover the first laser diode and the first submount, and a first reflective mirror fixed to the first cap and disposed outside a first space surrounded by the first substrate and the first cap, the first reflective mirror being configured to reflect light transmitted through the first transmission window in a direction inclined with respect to an optical axis direction of the first light.

公开(公告)号：US11962122B2

公开(公告)日：2024-04-16

申请号：US17260890

申请日：2019-07-10

申请人： PANASONIC CORPORATION

发明人： Hiroyuki Hagino ,  Shinichiro Nozaki

IPC分类号： H01S5/024 ,  H01S5/02 ,  H01S5/0237 ,  H01S5/0239 ,  H01S5/14 ,  H01S5/40

CPC分类号： H01S5/02469 ,  H01S5/0207 ,  H01S5/0237 ,  H01S5/0239 ,  H01S5/02461 ,  H01S5/141 ,  H01S5/4087 ,  H01S5/40 ,  H01S5/4062

摘要： A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.

公开(公告)号：US20230197893A1

公开(公告)日：2023-06-22

申请号：US17924288

申请日：2021-05-10

申请人： ams-OSRAM International GmbH

发明人： Christoph EICHLER ,  Lars NÄHLE ,  Sven GERHARD

IPC分类号： H01L33/10 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40

CPC分类号： H01L33/10 ,  H01L33/005 ,  H01L33/62 ,  H01L25/0753 ,  H01S5/0071 ,  H01S5/0203 ,  H01S5/40 ,  H01L2933/0058

摘要： The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

公开(公告)号：US20190103723A1

公开(公告)日：2019-04-04

申请号：US16141542

申请日：2018-09-25

申请人： NICHIA CORPORATION

发明人： Soichiro MIURA ,  Kazuma KOZURU

IPC分类号： H01S3/08 ,  G02B27/30 ,  H01L33/50 ,  H01L33/10 ,  G02B27/09

CPC分类号： H01S5/4081 ,  H01S5/0071 ,  H01S5/02216 ,  H01S5/0222 ,  H01S5/02252 ,  H01S5/0228 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/02296 ,  H01S5/02469 ,  H01S5/32308 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/40 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/4093

摘要： A light emitting device includes first and second semiconductor laser elements and a collimate lens. The first semiconductor laser element irradiates a first light having a first peak wavelength in a visible range. The second semiconductor laser element, irradiates a second light having a second peak wavelength in the visible range, which is different from the first peak wavelength. The collimate lens is arranged on paths of the first and second lights. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes. The second lens portion is connected to the first lens portion, and the first and second lens portions are different from each other in at least one of a shape of a light incident surface, a shape of a light extracting surface, and a height.

公开(公告)号：US20180219350A1

公开(公告)日：2018-08-02

申请号：US15938521

申请日：2018-03-28

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： Martin MÖHRLE ,  Michael THEURER ,  Ariane SIGMUND ,  Ute TROPPENZ

IPC分类号： H01S5/022 ,  H01S5/22 ,  H01S5/028 ,  H01S5/042 ,  H01S5/40 ,  H01S5/343 ,  H01S5/50 ,  H01S5/026

CPC分类号： H01S5/02268 ,  G02B6/4224 ,  H01S5/0224 ,  H01S5/02256 ,  H01S5/026 ,  H01S5/0281 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/22 ,  H01S5/34306 ,  H01S5/40 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/50

摘要： What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.

公开(公告)号：US09905999B2

公开(公告)日：2018-02-27

申请号：US15053876

申请日：2016-02-25

申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY

发明人： Jiang Li ,  Kerry Vahala

IPC分类号： H01S5/068 ,  H01S5/0687 ,  H01S5/00 ,  H01S5/04 ,  H01S5/062 ,  H01S5/40 ,  H01S3/06 ,  H01S3/13 ,  H01S3/30 ,  H01S3/00 ,  H03L7/00 ,  H03B17/00 ,  H01S3/067 ,  H01S3/23

CPC分类号： H01S5/0687 ,  H01S3/0085 ,  H01S3/0627 ,  H01S3/06791 ,  H01S3/1304 ,  H01S3/1305 ,  H01S3/1307 ,  H01S3/2391 ,  H01S3/30 ,  H01S5/0078 ,  H01S5/041 ,  H01S5/0623 ,  H01S5/06817 ,  H01S5/40 ,  H03B17/00 ,  H03L7/00

摘要： Microwave-frequency signal generation by generating multiple sideband optical signals separated by phase-modulation frequency fM, generating beat signals between one or two sidebands and one or two optical reference signals, generating a loop-filtered error signal by comparing an electrical reference signal to one of the beat signals or their difference, and controlling with the error signal in a phase-locked loop arrangement a voltage-controlled oscillator (VCO) that drives the sideband generation at the frequency fM. A portion of the VCO output is the generated microwave-frequency signal.

公开(公告)号：US20180031850A1

公开(公告)日：2018-02-01

申请号：US15127211

申请日：2016-02-06

申请人： BWT Beijing Ltd.

发明人： Xiaochen Jiang ,  Tie Wang ,  Weirong Guo ,  Baohua Wang ,  Rui Liu ,  Lei Xu

IPC分类号： G02B27/10 ,  H01S5/40 ,  H01S5/00

CPC分类号： G02B27/10 ,  G02B19/0019 ,  G02B19/0057 ,  G02B27/0905 ,  G02B27/0911 ,  G02B27/0922 ,  H01S5/0071 ,  H01S5/40 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/405

摘要： The present invention belongs to the field of laser technology, particularly relates to a semiconductor laser, including a substrate, and lasers, fast axis collimation components, slow axis collimation components, steering compression optical systems, a polarization beam combination prism, a focusing lens and an optical fiber provided on the substrate, wherein the lasers can be arranged in two rows or one row. And lasers of the same row are all located in a same plane. Each laser is sequentially provided with a fast axis collimation component and a slow axis collimation component in the direction of an optical path. The lasers of the same row correspond to a group of steering compression optical systems used to steer and compress the light beams collimated by the fast axis collimation components and the slow axis collimation components. The polarization beam combination prism is used for combining two beams of lasers having been steered and compressed by two groups of the steering compression optical systems. And the laser combined by the polarization beam combination prism is coupled into the optical fiber by the focusing lens. The present invention has a compact structure and a simple optical path, effectively reduces the thickness of the substrate and improves the thermal dissipation capacity of the laser, so that the efficiency and reliability of the laser are improved.

公开(公告)号：US09780526B2

公开(公告)日：2017-10-03

申请号：US14933664

申请日：2015-11-05

申请人： Sony Corporation

发明人： Shunsuke Kono ,  Masaru Kuramoto ,  Rintaro Koda

IPC分类号： H01S3/098 ,  H01S5/065 ,  H01S5/343 ,  H01S5/50 ,  H01S5/14 ,  H01S5/06 ,  H01S5/40 ,  H01S3/23 ,  H01S3/08 ,  H01S5/00 ,  H01S5/10 ,  H01S5/22

CPC分类号： H01S5/0657 ,  H01S3/08004 ,  H01S3/08009 ,  H01S3/2308 ,  H01S5/0057 ,  H01S5/0078 ,  H01S5/0602 ,  H01S5/065 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/141 ,  H01S5/143 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/40 ,  H01S5/50

摘要： A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.