公开(公告)号：US20090084987A1

公开(公告)日：2009-04-02

申请号：US11863728

申请日：2007-09-28

申请人： Ludovic GODET ,  Svetlana RADOVANOV ,  George D. PAPASOULIOTIS ,  Deven M. RAJ ,  Vikram SINGH ,  Timothy J. MILLER ,  Ziwei FANG

发明人： Ludovic GODET ,  Svetlana RADOVANOV ,  George D. PAPASOULIOTIS ,  Deven M. RAJ ,  Vikram SINGH ,  Timothy J. MILLER ,  Ziwei FANG

IPC分类号： A61N5/00

CPC分类号： H01J37/32706 ,  H01J37/32623 ,  H01J37/32935

摘要： A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece.

摘要翻译： 等离子体处理装置包括处理室，被配置为在处理室中产生等离子体的源和被构造成在处理室中支撑工件的压板。 压板由具有脉冲ON和OFF时间段的脉冲压板信号偏置，以在脉冲接通时间段期间将离子从等离子体加速到工件，而不是脉冲关闭时间周期。 板位于处理室中。 板被板信号偏置，以将离子从等离子体加速到板，以在脉冲压板信号的脉冲关闭时间周期的至少一部分的至少一部分期间引起来自板的二次电子的发射，以至少部分中和 电荷积累在工件上。

公开(公告)号：US20120258583A1

公开(公告)日：2012-10-11

申请号：US13440616

申请日：2012-04-05

申请人： Ludovic GODET ,  Morgan D. Evans ,  Christopher R. Hatem

发明人： Ludovic GODET ,  Morgan D. Evans ,  Christopher R. Hatem

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/266

摘要： Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.

摘要翻译： 氧，硅，锗，碳或氮被选择性地植入到工件中。 将工件退火以将离子结合到工件中。 然后在工件上形成化合物半导体。 例如，氮化镓可以形成在硅，碳化硅或蓝宝石工件上。 注入区域的宽度可被配置为补偿退火期间的任何收缩。