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1.发明申请公开(公告)号：US20120309180A1
公开(公告)日：2012-12-06
申请号：US13588793
申请日：2012-08-17
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26566 , H01L21/2658
摘要： A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the substrate. Ions are then implanted into the substrate to form a retrograde profile from the surface peak profile, at least one of an ion implantation dose and an ion implantation energy of the implanted ions being chosen so that the retrograde profile has a peak concentration that is positioned at a desired distance from the surface of the substrate.
摘要翻译： 在衬底中形成逆行材料轮廓的方法包括在衬底上形成表面峰分布。 然后将离子注入到衬底中以从表面峰曲线形成逆行曲线，选择注入离子的离子注入剂量和离子注入能量中的至少一种，使得逆行曲线具有位于 距离衬底表面的期望距离。
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公开(公告)号：US20110086501A1
公开(公告)日：2011-04-14
申请号：US12902250
申请日：2010-10-12
IPC分类号： H01L21/30
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译： 公开了一种处理具有水平和非水平表面的衬底的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。 该膜的存在可能不利地改变基材的性质。 为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。 该材料修饰步骤可以代替或补充蚀刻工艺。
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3.发明申请公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
IPC分类号： H05H1/34 , H01L21/465
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译： 公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。 所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。 通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。 脉冲长度足以影响电子，但是太快而不能显着影响离子。 能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。 然后可以优化等离子体组成以满足所使用的具体方法的要求。 这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。
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公开(公告)号：US20090324849A1
公开(公告)日：2009-12-31
申请号：US12344533
申请日：2008-12-28
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/76826 , H01L21/76831
摘要： Several embodiments of a method for sealing pores on a porous substrate are disclosed. In one embodiment, the method comprises introducing first particles to the surface of the substrate and damaging the surface to decrease the size of the pores on the surface; introducing second particle to the surface; and forming a film on the surface covering the pores, where the film has a dielectric constant of 4 or less.
摘要翻译： 公开了用于密封多孔基底上的孔的方法的几个实施例。 在一个实施方案中，所述方法包括将第一颗粒引入到所述基材的表面并损坏所述表面以减小所述表面上的孔的尺寸; 将第二颗粒引入表面; 并且在覆盖孔的表面上形成膜，其中该膜的介电常数为4或更小。
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公开(公告)号：US20090278059A1
公开(公告)日：2009-11-12
申请号：US12428527
申请日：2009-04-23
IPC分类号： H01J37/08
CPC分类号： G01B11/0683
摘要： A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.
摘要翻译： 本文描述了一种方法和装置，其允许待监测的膜的分层进展。 干涉仪用于检测薄膜分层的发生和进展。 通过在表面投射一个或多个波长并测量这些投影波长的反射率，可以监测分层过程的进展。 测试表明，分层过程的不同阶段产生不同的反射率图。 该信息可用于建立植入参数，或可用作原位监测。 相同的技术可以用于其他应用。 例如，在诸如PECVD的某些植入系统中，材料膜可以在室的壁上显影。 本文描述的技术可以用于监测该分离，并且确定何时可以在腔室上进行预防性维护。
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6.发明授权Metal-free catalysts for pulsed deposition layer process for conformal silica laminates 有权用于保形二氧化硅层压板的脉冲沉积层工艺的无金属催化剂公开(公告)号：US07491653B1
公开(公告)日：2009-02-17
申请号：US11318268
申请日：2005-12-23
申请人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
发明人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31612 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/31625 , H01L21/31629 , H01L21/31633 , H01L21/76837
摘要： A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.
摘要翻译： 可以根据脉冲层沉积（PDL）工艺形成不含金属和非准金属的纳米酸盐电介质膜。 使用金属和非准金属化合物催化二氧化硅沉积与烷氧基硅烷醇表面反应的反应。 膜可以以每个曝光周期快30nm的速度生长。 本发明可用于沉积掺杂（例如PSG）和未掺杂的氧化硅膜。 沉积的膜是共形的，因此该方法可以在高级技术节点（例如，45nm技术节点及其以外）中遇到的高纵横比间隙中实现无空隙间隙填充，并可用于需要保形电介质沉积的其它应用中。
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7.发明授权Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry 有权在密闭几何结构中通过脉冲沉积层形成高密度，保形的二氧化硅纳米酸盐膜的方法公开(公告)号：US07271112B1
公开(公告)日：2007-09-18
申请号：US11026284
申请日：2004-12-30
申请人： George D. Papasouliotis , Raihan M. Tarafdar , Adrianne K. Tipton , Ron Rulkens , Dennis M. Hausmann , Jeff Tobin
发明人： George D. Papasouliotis , Raihan M. Tarafdar , Adrianne K. Tipton , Ron Rulkens , Dennis M. Hausmann , Jeff Tobin
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/045 , C23C16/45525 , C23C16/45529 , H01L21/02145 , H01L21/02164 , H01L21/02214 , H01L21/0228 , H01L21/31612
摘要： Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enhanced by optimizing the temperature of the substrate during exposure to the metal-containing and/or silicon-containing precursor gases commonly used in conformal film deposition techniques such as ALD and PDL.
摘要翻译： 描述了形成密度增加的保形膜的方法。 该方法可用于通过消除接缝和空隙来改善半导体器件制造中的间隙填充。 该方法涉及在高反应物分压下操作。 此外，通过在通常用于保形膜沉积技术（例如ALD和PDL）中的含金属和/或含硅前体气体曝光期间优化衬底的温度，可以进一步提高膜性能。
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8.发明授权公开(公告)号：US07223707B1
公开(公告)日：2007-05-29
申请号：US11027480
申请日：2004-12-30
申请人： George D. Papasouliotis , Jeff Tobin , Ron Rulkens , Dennis M. Hausmann , Adrianne K. Tipton , Raihan M. Tarafdar , Bunsen Nie
发明人： George D. Papasouliotis , Jeff Tobin , Ron Rulkens , Dennis M. Hausmann , Adrianne K. Tipton , Raihan M. Tarafdar , Bunsen Nie
IPC分类号： H01L21/00
CPC分类号： C23C16/45534 , C23C16/402 , C23C16/45529 , H01L21/02145 , H01L21/02164 , H01L21/02214 , H01L21/0228 , H01L21/3142 , H01L21/31612 , H01L21/3162 , H01L21/76837
摘要： A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, reactor pressure and/or reactant partial pressure, as opposed to static process conditions through various cycles, can be used to minimize film roughness and improve gap fill performance and film properties via the elimination or reduction of seam occurrence. Overall film roughness can be reduced by operating the initial growth cycle under conditions which optimize film smoothness, and then switching to conditions that will enhance conformality, gap fill and film properties for the subsequent process cycles. Film deposition characteristics can be changed by modulating one or more of a number of process parameters including wafer temperature, reactor pressure, reactant partial pressure and combinations of these.
摘要翻译： 在半导体制造中使用ALD和RVD技术来生产光滑的纳米层状电介质膜的方法，特别是用掺杂或未掺杂的石英玻璃填充结构的方法，使用动态工艺条件。 可以使用与通过各种循环的静态工艺条件相反的使用可变衬底（例如，晶片）温度，反应器压力和/或反应物分压的动态过程来最小化膜粗糙度，并通过消除来改善间隙填充性能和膜性质 或减少接缝发生。 通过在优化膜平滑性的条件下操作初始生长周期，然后转换到将增强后续工艺循环的共形性，间隙填充和膜性能的条件，可以降低总膜的粗糙度。 可以通过调制包括晶片温度，反应器压力，反应物分压以及它们的组合在内的多个工艺参数中的一个或多个来改变膜沉积特性。
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公开(公告)号：US07135418B1
公开(公告)日：2006-11-14
申请号：US11077198
申请日：2005-03-09
IPC分类号： H01L21/31
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/402 , C23C16/45523 , C23C16/45557 , H01L21/3142 , H01L21/31608 , H01L21/31616 , Y10S438/907 , Y10S438/909 , Y10S438/935
摘要： Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-containing precursors. The methods may involve introducing multiple doses of the silicon-containing precursor for each dose of the metal-containing precursor and/or re-pressurizing the process chamber during exposure to a dose of the silicon-containing precursor. The methods of the present invention are particularly suitable for use in RVD processes.
摘要翻译： 描述了形成保护膜的方法，其减少了含金属的前体和/或含硅前体材料的量。 这些方法增加了每种剂量的含金属和/或含硅前体后生长的膜的量。 该方法可以包括在暴露于含硅前体的剂量期间为每个剂量的含金属的前体引入多个剂量的含硅前体和/或再加压处理室。 本发明的方法特别适用于RVD方法。
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公开(公告)号：US08698106B2
公开(公告)日：2014-04-15
申请号：US12428527
申请日：2009-04-23
IPC分类号： G21K5/00
CPC分类号： G01B11/0683
摘要： A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.
摘要翻译： 本文描述了一种方法和装置，其允许待监测的膜的分层进展。 干涉仪用于检测薄膜分层的发生和进展。 通过在表面投射一个或多个波长并测量这些投影波长的反射率，可以监测分层过程的进展。 测试表明，分层过程的不同阶段产生不同的反射率图。 该信息可用于建立植入参数，或可用作原位监测。 相同的技术可以用于其他应用。 例如，在诸如PECVD的某些植入系统中，材料膜可以在室的壁上显影。 本文描述的技术可以用于监测该分离，并且确定何时可以在腔室上进行预防性维护。
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