公开(公告)号：US20140269036A1

公开(公告)日：2014-09-18

申请号：US14184043

申请日：2014-02-19

Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

公开(公告)号：US20090061259A1

公开(公告)日：2009-03-05

申请号：US12039112

申请日：2008-02-28

Applicant: Hoo-san LEE ,  Sung-chul LEE ,  Hoon-sang OH

Inventor： Hoo-san LEE ,  Sung-chul LEE ,  Hoon-sang OH

IPC: G11B5/66 ,  G11B5/65

CPC classification number: G11B5/66 ,  G11B5/855

Abstract: A bit patterned medium in which an exchange coupling layer induces exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The exchange coupling layer is disposed either over or under a recording layer having a plurality of bits. The exchange coupling layer induces exchange coupling between a bit which is to be recorded and an adjacent bit and reduces a switching field difference resulting from a difference between the magnetization direction of the bit to be recorded and the magnetization direction of neighboring bits due to an exchange coupling force generated during the exchange coupling.

Abstract translation: 一种位图形介质，其中交换耦合层引起相邻位之间的交换耦合，以便减少由不同磁化方向引起的开关场差。 交换耦合层设置在具有多个位的记录层之上或之下。 交换耦合层引起要被记录的位和相邻位之间的交换耦合，并减少由于要记录的位的磁化方向与由于交换而产生的相邻位的磁化方向之间的差导致的开关场差 在交换耦合期间产生的耦合力。