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公开(公告)号：US20090061259A1
公开(公告)日：2009-03-05
申请号：US12039112
申请日：2008-02-28
Applicant: Hoo-san LEE , Sung-chul LEE , Hoon-sang OH
Inventor： Hoo-san LEE , Sung-chul LEE , Hoon-sang OH
Abstract: A bit patterned medium in which an exchange coupling layer induces exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The exchange coupling layer is disposed either over or under a recording layer having a plurality of bits. The exchange coupling layer induces exchange coupling between a bit which is to be recorded and an adjacent bit and reduces a switching field difference resulting from a difference between the magnetization direction of the bit to be recorded and the magnetization direction of neighboring bits due to an exchange coupling force generated during the exchange coupling.
Abstract translation: 一种位图形介质，其中交换耦合层引起相邻位之间的交换耦合，以便减少由不同磁化方向引起的开关场差。 交换耦合层设置在具有多个位的记录层之上或之下。 交换耦合层引起要被记录的位和相邻位之间的交换耦合，并减少由于要记录的位的磁化方向与由于交换而产生的相邻位的磁化方向之间的差导致的开关场差 在交换耦合期间产生的耦合力。
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公开(公告)号：US20160079518A1
公开(公告)日：2016-03-17
申请号：US14816410
申请日：2015-08-03
Applicant: Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
Inventor： Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
CPC classification number: H01L43/04 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/065 , H01L43/08 , H01L43/10
Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。
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3.发明申请公开(公告)号：US20140252519A1
公开(公告)日：2014-09-11
申请号：US14167553
申请日：2014-01-29
Applicant: Kee-won KIM , Kwang-seok KIM , Sung-chul LEE , Young-man JANG , Ung-hwan PI
Inventor： Kee-won KIM , Kwang-seok KIM , Sung-chul LEE , Young-man JANG , Ung-hwan PI
CPC classification number: H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
Abstract translation: 磁阻结构，包括该磁阻结构的磁性随机存取存储器以及制造磁阻结构的方法包括具有固定的磁化方向的第一磁性层，与第一磁性层对应的第二磁性层， 第二磁性层是可变的，以及在第一磁性层和第二磁性层之间的磁阻（MR）增强层和中间层。
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公开(公告)号：US20170040529A1
公开(公告)日：2017-02-09
申请号：US15332460
申请日：2016-10-24
Applicant: Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
Inventor： Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
CPC classification number: H01L43/04 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/065 , H01L43/08 , H01L43/10
Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。
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公开(公告)号：US20130161769A1
公开(公告)日：2013-06-27
申请号：US13591809
申请日：2012-08-22
Applicant: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
Inventor： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
CPC classification number: G11C11/161 , G11C11/15 , H01L43/08 , Y10T428/1121
Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
Abstract translation: 磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。 辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。
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Patent Agency Ranking
6.发明申请MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE 审中-公开包括具有三维结构的自由磁层的磁记忆装置公开(公告)号：US20130140657A1
公开(公告)日：2013-06-06
申请号：US13572105
申请日：2012-08-10
Applicant: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
Inventor： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
IPC: H01L29/82
CPC classification number: H01L27/228 , H01L43/08
Abstract: Magnetic memory devices including a free magnetic layer having a three-dimensional structure, include a switching device and a magnetic tunnel junction (MTJ) cell connected thereto. The MTJ cell includes a lower magnetic layer, a tunnel barrier layer, and a free magnetic layer, which are sequentially stacked. A portion of the free magnetic layer protrudes in a direction away from an upper surface of the tunnel barrier layer.
Abstract translation: 包括具有三维结构的自由磁性层的磁存储器件包括与其连接的开关器件和磁性隧道结（MTJ）单元。 MTJ单元包括依次层叠的下磁性层，隧道势垒层和自由磁性层。 自由磁性层的一部分沿远离隧道势垒层的上表面的方向突出。
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7.发明申请MAGNETORESISTIVE STRUCTURES, MEMORY DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURES AND THE MEMORY DEVICES 审中-公开磁体结构，包括它们的记忆体装置，以及制造磁性结构和记忆装置的方法公开(公告)号：US20140231941A1
公开(公告)日：2014-08-21
申请号：US14182660
申请日：2014-02-18
Applicant: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
Inventor： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
IPC: H01L43/02
CPC classification number: H01F10/3254 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/325 , H01F10/3286 , H01L27/228
Abstract: Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned layer opposing the plurality of free layers. The separation layer is between the at least one pinned layer and the plurality of free layers. The at least one pinned layer has a magnetization direction that is fixed.
Abstract translation: 磁阻结构，包括其的存储器件以及制造磁阻结构和存储器件的方法包括多个具有可变化的磁化方向的自由层，分离层覆盖多个自由层中的至少两个， 以及与多个自由层相对的至少一个钉扎层。 分离层位于至少一个钉扎层和多个自由层之间。 所述至少一个钉扎层具有固定的磁化方向。
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8.发明申请MEMORY DEVICE USING SPIN HALL EFFECT AND METHODS OF MANUFACTURING AND OPERATING THE MEMORY DEVICE 有权使用旋转霍尔效应的存储器件和制造和操作存储器件的方法公开(公告)号：US20140211552A1
公开(公告)日：2014-07-31
申请号：US14162144
申请日：2014-01-23
Applicant: Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
Inventor： Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/18 , H01L27/222 , H01L43/08
Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
Abstract translation: 使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元 由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。
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公开(公告)号：US20080068881A1
公开(公告)日：2008-03-20
申请号：US11851049
申请日：2007-09-06
Applicant: Chee-kheng LIM , Eun-sik KIM , Sung-chul LEE
Inventor： Chee-kheng LIM , Eun-sik KIM , Sung-chul LEE
IPC: G11C11/15
CPC classification number: G11C11/14 , G11C19/0808 , G11C19/0816 , G11C19/0841 , Y10S977/933
Abstract: Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.
Abstract translation: 提供了采用磁畴壁运动的存储器件。 存储器件包括第一轨道，互连层和第二轨道。 包括磁性材料的第一轨迹形成在第一方向上。 互连层形成在第一轨道上。 包括磁性材料的第二轨道在互连层上沿第二方向形成。
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公开(公告)号：US20140339660A1
公开(公告)日：2014-11-20
申请号：US14247245
申请日：2014-04-07
Applicant: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
Inventor： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228
Abstract: Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature.
Abstract translation: 提供了磁阻元件，包括其的存储器件及其操作方法。 磁阻元件可以包括自由层，并且自由层可以包括具有不同特性的多个区域（层）。 自由层可以包括具有不同居里温度的多个区域（层）。 自由层的居里温度可以在区域上或逐渐地远离被钉扎层的位置改变。 自由层可以包括在第一温度下具有铁磁特性的第一区域和在第一温度下具有顺磁特性的第二区域。 第一区域和第二区域在低于第一温度的第二温度下都可以具有铁磁特性。 自由层的有效厚度可随温度而变化。
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