公开(公告)号：US20080020585A1

公开(公告)日：2008-01-24

申请号：US11727403

申请日：2007-03-26

申请人： Ryukichi Shimizu ,  Akhiro Kikuchi ,  Toshihiko Shindo

发明人： Ryukichi Shimizu ,  Akhiro Kikuchi ,  Toshihiko Shindo

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76811

摘要： To provide a manufacturing method for semiconductor manufacturing device that can suppress the development of striations when forming holes by etching an etch target film composed of an inorganic insulating film, a first sacrifice film stacked on this insulating film and having components different from those of the insulating film, a second sacrifice film formed of an inorganic insulating film, whereon a pattern for forming grooves for wiring embedment on the insulating film is formed. In a substrate including a photoresist film, wherein a pattern for forming holes for embedding the wiring material on the upper layer of the above etch target film, a thickness of the above organic layer is greater than a thickness of an etch target layer composed of the above insulating film, the above first sacrifice film and the above second sacrifice film, a mixed gas containing CF4 gas and CHF3 gas is converted into plasma, and the etch target layer is etched by using the plasma.

摘要翻译： 为了提供半导体制造装置的制造方法，其可以通过蚀刻由无机绝缘膜构成的蚀刻目标膜来形成空穴来抑制条纹的发展，第一牺牲膜层叠在该绝缘膜上并且具有与绝缘体不同的成分 膜，由无机绝缘膜形成的第二牺牲膜，其中形成用于形成用于布线埋入绝缘膜的槽的图案。 在包括光致抗蚀剂膜的基板中，其中用于形成用于将布线材料嵌入上述蚀刻靶膜的上层的孔的图案，上述有机层的厚度大于由所述蚀刻目标层构成的蚀刻目标层的厚度 上述绝缘膜，上述第一牺牲膜和上述第二牺牲膜，含有CF 4气体和CHF 3 N 3气体的混合气体被转换成等离子体，并且蚀刻靶 层通过使用等离子体进行蚀刻。

公开(公告)号：US20050106875A1

公开(公告)日：2005-05-19

申请号：US10948241

申请日：2004-09-24

申请人： Kazuhiro Kubota ,  Yoshiki Igarashi ,  Shigeru Tahara ,  Shin Okamoto ,  Toshihiko Shindo ,  Yoshinobu Ooya

发明人： Kazuhiro Kubota ,  Yoshiki Igarashi ,  Shigeru Tahara ,  Shin Okamoto ,  Toshihiko Shindo ,  Yoshinobu Ooya

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01J2237/3342 ,  H01L21/31138

摘要： A plasma ashing method of an object to be processed removes a resist film therefrom in a processing vessel after etching a part of a low dielectric constant film with the resist film having a pattern thereon as a mask in the processing vessel. The plasma ashing method includes a first and a second ashing processes. The first ashing process removes deposits off an inner wall of the processing vessel by using a first processing gas including at least O2 gas while controlling the pressure in the processing vessel to be smaller than or equal to 20 mTorr. The second ashing process removes the resist film by using a second processing gas including at least O2 gas.

摘要翻译： 在处理容器内蚀刻一部分具有图案的抗蚀剂膜作为掩模的低介电常数膜的一部分后，处理容器中的等离子体灰化方法从处理容器中除去抗蚀剂膜。 等离子体灰化方法包括第一和第二灰化过程。 第一灰化过程通过使用包括至少O 2 2气体的第一处理气体同时将处理容器中的压力控制在小于或等于20mTorr，从处理容器的内壁去除沉积物 。 第二灰化处理通过使用至少包含O 2 O 2气体的第二处理气体去除抗蚀剂膜。