摘要:
A photoelectric conversion device which can improve photoelectric conversion efficiency is provided. The photoelectric conversion device has at least one p-i-n type photoelectric conversion part which includes a first conductivity type layer, a first i-type layer, a second i-type layer and a second conductivity type layer stacked in this order, and it is characterized in that a crystallization ratio of the first i-type layer is lower than that of the second i-type layer and a change rate of a crystallization ratio in a film-thickness direction at an interface between the first i-type layer and the second i-type layer is 0.013 to 0.24 nm−1.
摘要:
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.
摘要:
A thin-film solar battery module comprising: a plurality of thin-film solar batteries; a supporting plate; and a frame, the thin-film solar battery having a string in which a plurality of thin-film photoelectric conversion elements, each formed by sequentially stacking a first electrode layer, a photoelectric conversion layer and a second electrode layer on a surface of an insulated substrate, are electrically connected in series, wherein the frame is attached to an outer circumference of the supporting plate in a condition that the plurality of thin-film solar batteries are arranged and fixed on the supporting plate.
摘要:
A method for manufacturing a silicon-containing film includes the steps of loading a substrate, depositing a silicon-containing unloading the substrate, dry cleaning, reducing fluoride and exhausting gas. In the step of reducing fluoride, a reducing gas is supplied into a chamber in such a way that a partial pressure of CF4 gas in the chamber is A×(2.0×10−4) Pa or less at the end of the step of exhausting gas.
摘要:
A laminated body, comprising: a supporting body having a concave-convex surface; and a semiconductor layer laminated on a surface of the supporting body, wherein a part of the supporting body includes a layer thickness measurement portion for optically measuring a layer thickness of the semiconductor layer, and the layer thickness measurement portion includes a reduced surface roughness region whose surface roughness is smaller than that of the concave-convex surface.
摘要:
An integrated thin-film solar battery, comprising: a plurality of strings having a plurality of thin-film photoelectric conversion elements formed on a transparent insulating substrate, the thin-film photoelectric conversion elements being electrically connected in series to each other, wherein the thin-film photoelectric conversion elements have a first transparent electrode layer laminated on the transparent insulating substrate, a photoelectric conversion layer laminated on the first electrode layer and a second electrode layer laminated on the photoelectric conversion layer, the plurality of strings are arranged in parallel on the same transparent insulating substrate in a direction perpendicular to the series-connecting direction across one or more string separating grooves extending to the series-connecting direction, the string separating groove includes a first groove formed by removing the first electrode layer, and a second groove formed by removing the photoelectric conversion layer and the second electrode layer with a width wider than that of the first groove, the thin-film photoelectric conversion elements on any position in the series-connecting direction are parallel-connection elements some of which are removed by the string separating groove and residual ones of which are connected integrally so as to extend to the direction perpendicular to the series-connecting direction, and the parallel-connection elements electrically connect the plurality of strings in parallel.
摘要:
An integrated thin-film solar battery, comprising: a string that includes a plurality of thin-film photoelectric conversion elements formed on a transparent insulating substrate and electrically connected in series to each other; and one or more power collecting electrodes electrically jointed to the string, wherein the thin-film photoelectric conversion elements have a first transparent electrode layer laminated on the transparent insulating substrate, a photoelectric conversion layer laminated on the first electrode layer, and a second electrode layer laminated on the photoelectric conversion layer, the power collecting electrode is electrically jointed onto the second electrode layer of any thin-film photoelectric conversion element in the string, the string has an element separating groove formed by removing the second electrode layer and the photoelectric conversion layer between the adjacent two thin-film photoelectric elements, the first electrode layer of one thin-film photoelectric conversion element has an extending section whose one end crosses the element separating groove and that extends to a region of another adjacent thin-film photoelectric conversion element, and is electrically insulated from the first electrode layer of the adjacent thin-film photoelectric conversion element by one or more electrode separating line, the second electrode layer of the one thin-film photoelectric conversion element is electrically connected to the extending section of the first electrode layer of the adjacent thin-film photoelectric conversion element via a conductive section passing through the photoelectric conversion layer, the thin-film photoelectric conversion element jointed to the power collecting electrode is constituted so that the conductive section is arranged on at least one of an upper-stream side and a lower-stream side in a current direction of an electric current flowing through the string with respect to the power collecting electrode, and the first electrode layer just below and near the power collecting electrode is short-circuited from the second electrode layer by the one or more conductive sections.
摘要:
A laminated body, comprising: a supporting body having a concave-convex surface; and a semiconductor layer laminated on a surface of the supporting body, wherein a part of the supporting body includes a layer thickness measurement portion for optically measuring a layer thickness of the semiconductor layer, and the layer thickness measurement portion includes a reduced surface roughness region whose surface roughness is smaller than that of the concave-convex surface.
摘要:
An integrated thin-film solar battery, comprising: a string that includes a plurality of thin-film photoelectric conversion elements formed on a transparent insulating substrate and electrically connected in series to each other; and one or more power collecting electrodes electrically jointed to the string, wherein the thin-film photoelectric conversion elements have a first transparent electrode layer laminated on the transparent insulating substrate, a photoelectric conversion layer laminated on the first electrode layer, and a second electrode layer laminated on the photoelectric conversion layer, the power collecting electrode is electrically jointed onto the second electrode layer of any thin-film photoelectric conversion element in the string, the string has an element separating groove formed by removing the second electrode layer and the photoelectric conversion layer between the adjacent two thin-film photoelectric elements, the first electrode layer of one thin-film photoelectric conversion element has an extending section whose one end crosses the element separating groove and that extends to a region of another adjacent thin-film photoelectric conversion element, and is electrically insulated from the first electrode layer of the adjacent thin-film photoelectric conversion element by one or more electrode separating line, the second electrode layer of the one thin-film photoelectric conversion element is electrically connected to the extending section of the first electrode layer of the adjacent thin-film photoelectric conversion element via a conductive section passing through the photoelectric conversion layer, in the thin-film photoelectric conversion elements jointed to the power collecting electrodes, at least a portion of the first electrode layer just below the power collecting electrodes and the other portion are insulated and separated from each other by at least one of the electrode separating line and the insulating line.
摘要:
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.