公开(公告)号：US20070128757A1

公开(公告)日：2007-06-07

申请号：US11588298

申请日：2006-10-27

申请人： Young-chul Ko ,  Hyun-ku Jeong ,  Seok-whan Chung

发明人： Young-chul Ko ,  Hyun-ku Jeong ,  Seok-whan Chung

IPC分类号： H01L21/00

CPC分类号： B81C1/00626 ,  B81B2203/0136 ,  B81C1/00396

摘要： A method of forming comb electrodes using self alignment etching is provided. A method of forming a stationary comb electrode and a movable comb electrode in first and second silicon layers of a SOI (Silicon-on-Insulator) substrate, respectively, using etching. The method involves sequentially etching the first silicon layer, the insulating layer, and the second silicon layer using an alignment mark formed in the first silicon layer. According to the method, the stationary comb electrode and the movable comb electrode are self-aligned for etching by patterning the first silicon layer.

摘要翻译： 提供了使用自对准蚀刻形成梳状电极的方法。 分别使用蚀刻在SOI（绝缘体上硅）衬底的第一和第二硅层中形成固定梳状电极和可动梳状电极的方法。 该方法包括使用形成在第一硅层中的对准标记来顺序蚀刻第一硅层，绝缘层和第二硅层。 根据该方法，通过图案化第一硅层，固定梳状电极和可动梳状电极自对准蚀刻。

公开(公告)号：US20060232840A1

公开(公告)日：2006-10-19

申请号：US11354014

申请日：2006-02-15

申请人： Hyun-ku Jeong ,  Won-joo Kim ,  Young-chul Ko

发明人： Hyun-ku Jeong ,  Won-joo Kim ,  Young-chul Ko

IPC分类号： G02B26/10

CPC分类号： G02B26/0841

摘要： A metal line structure of an optical scanner and a method of fabricating the same are provided. The metal line structure of the optical scanner includes: a glass substrate having a metal line region etched to a predetermined depth; a metal line formed in the metal line region; a diffusion barrier layer that is formed on the glass substrate and covers the metal line; and an optical scanner structure combined with the glass substrate.

摘要翻译： 提供了一种光学扫描仪的金属线结构及其制造方法。 光学扫描器的金属线结构包括：具有蚀刻到预定深度的金属线区域的玻璃基板; 形成在金属线区域中的金属线; 扩散阻挡层，其形成在所述玻璃基板上并覆盖所述金属线; 以及与玻璃基板结合的光学扫描器结构。

公开(公告)号：US20060023284A1

公开(公告)日：2006-02-02

申请号：US11147344

申请日：2005-06-08

申请人： Jin-ho Lee ,  Young-chul Ko ,  Hyun-ku Jeong

发明人： Jin-ho Lee ,  Young-chul Ko ,  Hyun-ku Jeong

IPC分类号： G02B26/08

CPC分类号： G02B26/105 ,  G02B26/0841 ,  H04N9/3129

摘要： Provided are an optical scanner including a micro-mirror having an improved a driving angle by using a micro-electro-mechanical system (MEMS) technique and a laser image projector using the same are provided. The optical scanner includes: a substrate; a mirror unit suspended over the substrate and spaced apart from the substrate by a predetermined distance; a supporter situated on the substrate and supporting both ends of the mirror unit so that the mirror unit is suspended over the substrate; a supporting axis connected between both ends of the mirror unit and the supporter so that the mirror unit can be rotatably supported by the supporter; a plurality of movable comb electrodes vertically formed on both sides of the mirror unit; and a plurality of static comb electrodes vertically formed on the substrate in such a way that the static comb electrodes alternate with the movable comb electrodes, wherein the static comb electrode is a two-layer structured electrode.

摘要翻译： 提供了一种包括通过使用微机电系统（MEMS）技术具有改进的驱动角度的微反射镜的光学扫描器，并且提供了使用其的激光图像投影仪。 光学扫描器包括：基板; 镜子单元悬挂在基板上并与基板隔开预定距离; 支撑体，其位于所述基板上并且支撑所述反射镜单元的两端，使得所述反射镜单元悬挂在所述基板上; 连接在反射镜单元的两端和支撑体之间的支撑轴，使得反射镜单元能够被支撑件可旋转地支撑; 多个可动梳状电极，垂直地形成在反射镜单元的两侧; 以及多个静电梳电极，其以所述静电梳电极与所述可动梳状电极交替的方式垂直地形成在所述基板上，其中所述静电梳电极为双层结构电极。

公开(公告)号：US07413920B2

公开(公告)日：2008-08-19

申请号：US11528619

申请日：2006-09-28

申请人： Young-chul Ko ,  Hyun-ku Jeong

发明人： Young-chul Ko ,  Hyun-ku Jeong

IPC分类号： H01L21/00

CPC分类号： B81C1/00547 ,  B81B2201/033

摘要： A double-sided etching method using an embedded alignment mark includes: preparing a substrate having first and second alignment marks embedded in an intermediate portion thereof; etching an upper portion of the substrate so as to expose the first alignment mark from a first surface of the substrate; etching the upper portion of the substrate using the exposed first alignment mark; etching a lower portion of the substrate so as to expose the second alignment mark from a second surface of the substrate; and etching the lower portion of the substrate using the exposed second alignment mark.

摘要翻译： 使用嵌入对准标记的双面蚀刻方法包括：准备具有嵌入其中间部分中的第一和第二对准标记的基板; 蚀刻所述基板的上部以便从所述基板的第一表面露出所述第一对准标记; 使用暴露的第一对准标记蚀刻衬底的上部; 蚀刻所述基板的下部以便从所述基板的第二表面露出所述第二对准标记; 并使用暴露的第二对准标记蚀刻衬底的下部。

公开(公告)号：US20080090372A1

公开(公告)日：2008-04-17

申请号：US11785146

申请日：2007-04-16

申请人： Hyun-ku Jeong ,  Seok-jin Kang ,  Seok-whan Chung

发明人： Hyun-ku Jeong ,  Seok-jin Kang ,  Seok-whan Chung

IPC分类号： H01L21/20

CPC分类号： H01L28/10 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a coil for a micro-actuator. The method of manufacturing a coil for a micro-actuator includes preparing a substrate, forming a plurality of trenches for forming a coil on the substrate, covering portions on the substrate with a masking layer except for the plurality of trenches, electroplating the plurality of trenches with a conductive material, and forming a passivation layer on the substrate. Consistent with the method, variations in sections of a coil can be reduced by minimizing bending and warping of a wafer, and therefore a driving current applied to a coil and power consumption can be reduced.

摘要翻译： 一种制造用于微致动器的线圈的方法。 制造微致动器用线圈的方法包括：准备基板，在基板上形成多个用于形成线圈的沟槽，用除了多个沟槽之外的掩模层覆盖基板上的部分，对多个沟槽进行电镀 具有导电材料，并在基底上形成钝化层。 与该方法一致，可以通过使晶片的弯曲和翘曲最小化来减小线圈的截面的变化，因此可以降低施加到线圈的驱动电流和功率消耗。

公开(公告)号：US20090130847A1

公开(公告)日：2009-05-21

申请号：US12123495

申请日：2008-05-20

申请人： Hyun-ku Jeong ,  Seok-gin Kang ,  Jin-ho Lee

发明人： Hyun-ku Jeong ,  Seok-gin Kang ,  Jin-ho Lee

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/76829 ,  H01L21/76831

摘要： Provided is a method of fabricating a metal pattern so that an insulation layer between a wafer and the metal pattern can be prevented from being damaged in a planarization procedure when the metal pattern having a trench structure is fabricated on the wafer. The method includes operations of forming a first insulation layer on a surface of the wafer; selectively etching the surface of the wafer and the first insulation layer so as to form a plurality of trenches; forming a second insulation layer on a bottom and side walls of the plurality of trenches by using a thermal oxidation method; filling a metal inside the plurality of trenches; and performing planarization by removing the metal deposited outside the plurality of trenches.

摘要翻译： 提供了一种制造金属图案的方法，使得当在晶片上制造具有沟槽结构的金属图案时，可以在平坦化过程中防止晶片和金属图案之间的绝缘层损坏。 该方法包括在晶片的表面上形成第一绝缘层的操作; 选择性地蚀刻晶片和第一绝缘层的表面以形成多个沟槽; 通过使用热氧化法在所述多个沟槽的底壁和侧壁上形成第二绝缘层; 在多个沟槽内填充金属; 并通过去除沉积在多个沟槽外部的金属来进行平坦化。

公开(公告)号：US20070284964A1

公开(公告)日：2007-12-13

申请号：US11754414

申请日：2007-05-29

申请人： Seok-whan Chung ,  Seok-jin Kang ,  Hyung Choi ,  Hyun-ku Jeong

发明人： Seok-whan Chung ,  Seok-jin Kang ,  Hyung Choi ,  Hyun-ku Jeong

IPC分类号： H01G9/00 ,  H02N1/00

CPC分类号： G02B26/0841 ,  B81B3/0086 ,  B81B2203/0136 ,  B81C1/00698

摘要： A micro-electro mechanical system (MEMS) device and a method of forming comb electrodes of the MEMS device are provided. The method includes forming a plurality of parallel trenches at regular intervals in one side of a first silicon substrate so as to define alternating first and second regions at different heights on the one side of the first silicon substrate, oxidizing the first silicon substrate in order to form an oxide layer in the first and second regions having different heights, forming a polysilicon layer on the oxide layer to at least fill up the trenches so as to level the oxide layer having different heights, bonding a second silicon substrate directly to a top surface of the polysilicon layer, selectively etching the second silicon substrate and the polysilicon layer using a first mask so as to form upper comb electrodes vertically aligned with the first regions, selectively etching the first silicon substrate using a second mask so as to form lower comb electrodes vertically aligned with the second regions, and removing the oxide layer interposed between the upper comb electrodes and the lower comb electrodes.

摘要翻译： 提供了微电子机械系统（MEMS）装置和形成MEMS装置的梳状电极的方法。 该方法包括在第一硅衬底的一侧中以规则的间隔形成多个平行的沟槽，以便在第一硅衬底的一侧上限定不同高度的交替的第一和第二区域，氧化第一硅衬底，以便 在具有不同高度的第一和第二区域中形成氧化物层，在氧化物层上形成多晶硅层以至少填充沟槽，以使具有不同高度的氧化物层平坦化，将第二硅衬底直接接合到顶表面 使用第一掩模选择性地蚀刻第二硅衬底和多晶硅层，以形成与第一区域垂直对准的上梳状电极，使用第二掩模选择性地蚀刻第一硅衬底，从而形成下梳状电极 与第二区域垂直对准，以及去除介于上梳状电极和上梳状电极之间的氧化物层 下梳电极。