公开(公告)号：US07909933B2

公开(公告)日：2011-03-22

申请号：US12437941

申请日：2009-05-08

申请人： Masunori Ishihara ,  Masamichi Sakaguchi ,  Yasuhiro Nishimori ,  Yutaka Kudou ,  Satoshi Une

发明人： Masunori Ishihara ,  Masamichi Sakaguchi ,  Yasuhiro Nishimori ,  Yutaka Kudou ,  Satoshi Une

IPC分类号： B08B7/00

CPC分类号： H01J37/32743 ,  H01J37/3244 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/67213

摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.

摘要翻译： 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供应与供给的传送气体相同的气体的供应系统 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

公开(公告)号：US07642194B2

公开(公告)日：2010-01-05

申请号：US11505375

申请日：2006-08-17

申请人： Yuji Kato ,  Eiji Ishikawa ,  Yutaka Kudou ,  Satoshi Tani ,  Kazuo Takata

发明人： Yuji Kato ,  Eiji Ishikawa ,  Yutaka Kudou ,  Satoshi Tani ,  Kazuo Takata

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32678

摘要： A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.

摘要翻译： 在SOI衬底中形成沟槽的蚀刻方法包括：通过使用氟化物气体和含氧气体的混合气体形成混合气体等离子体的形成工序和施加工序，其中高频 偏压被间歇地施加到SOI衬底。 在施加步骤中，高频偏置是时间调制的高频电。 根据蚀刻方法，可以提高屈服率和生产率。