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公开(公告)号：US08277563B2
公开(公告)日：2012-10-02
申请号：US13019131
申请日：2011-02-01
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其包括（i）供给转移气体，该转移气体降低处理室和转移室之间的压力差，以防止颗粒附着在待处理样品上，被处理通过到处理室， 在将样品转移到处理室之前; （ii）将所述样品转移到所述处理室中，同时继续将所述转移气体供给到所述处理室; （iii）在所述处理室中从所述转移气体产生等离子体，同时在转移所述样品的步骤之后继续将所述转移气体供给到所述处理室; 以及（iv）将从产生等离子体的步骤中使用的转移气体中提供给处理室的气体改变为用于对不同于清洁样品的处理样品进行等离子体处理的处理气体。
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公开(公告)号：US07909933B2
公开(公告)日：2011-03-22
申请号：US12437941
申请日：2009-05-08
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供应与供给的传送气体相同的气体的供应系统 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。
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公开(公告)号：US20080216865A1
公开(公告)日：2008-09-11
申请号：US11834046
申请日：2007-08-06
IPC分类号： B08B6/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。
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公开(公告)号：US20060016781A1
公开(公告)日：2006-01-26
申请号：US10928266
申请日：2004-08-30
IPC分类号： H01L21/302 , C23F1/00
CPC分类号： H01L21/3065 , H01L21/3086 , H01L21/31116 , H01L21/31138
摘要： The object of the invention is to provide a dry etching method for processing the edge portion of a hard mask to have a round profile. The present method for manufacturing a semiconductor device comprises (b) forming a silicon nitride film 12 mask using a patterned photoresist 13, (c) cutting back the photoresist 13 via dry etching, and (d) etching the exposed edge portion of the silicon nitride film mask 12, to thereby enable trench processing using a silicon nitride film mask 12 having a rounded edge portion.
摘要翻译： 本发明的目的是提供一种用于处理硬掩模的边缘部分以具有圆形轮廓的干蚀刻方法。 本发明的半导体器件的制造方法包括：（b）使用图案化的光致抗蚀剂13形成氮化硅膜12掩模，（c）通过干蚀刻切割光致抗蚀剂13，以及（d）蚀刻氮化硅的暴露边缘部分 膜掩模12，从而能够使用具有圆形边缘部分的氮化硅膜掩模12进行沟槽加工。
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公开(公告)号：US20090081872A1
公开(公告)日：2009-03-26
申请号：US12018836
申请日：2008-01-24
IPC分类号： H01L21/31 , H01L21/3065
CPC分类号： H01L21/31122
摘要： The invention provides an etching method having selectivity of a high-K material such as Al2O3 to polysilicon or hard mask. The present invention provides a method for manufacturing a semiconductor device by etching, using a plasma etching apparatus, a sample including an interlayer insulating layer 14 formed of a high-K material such as Al2O3 of a hard mask 11 and a Poly-Si layer 15 in contact with the interlayer insulating layer, wherein the method includes etching the high-K material 14 using BCl3, He and HBr while setting a temperature of a sample stage to normal temperature and applying a time-modulated high bias voltage, and repeating said etching process and a deposition process using SiCl4, BCl3 and He.
摘要翻译： 本发明提供了一种具有高K材料如Al 2 O 3对多晶硅或硬掩模的选择性的蚀刻方法。 本发明提供一种通过使用等离子体蚀刻装置的蚀刻制造半导体器件的方法，所述样品包括由诸如硬掩模11的Al 2 O 3的高K材料形成的层间绝缘层14和多晶硅层15 与所述层间绝缘层接触，其中所述方法包括在将样品台的温度设定为常温并施加时间调制的高偏压时，使用BCl 3，He和HBr蚀刻高K材料14，并重复所述蚀刻 工艺和使用SiCl4，BCl3和He的沉积工艺。
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公开(公告)号：US08207066B2
公开(公告)日：2012-06-26
申请号：US12512094
申请日：2009-07-30
申请人： Yoshiharu Inoue , Hiroaki Ishimura , Hitoshi Kobayashi , Masunori Ishihara , Toru Ito , Toshiaki Nishida
发明人： Yoshiharu Inoue , Hiroaki Ishimura , Hitoshi Kobayashi , Masunori Ishihara , Toru Ito , Toshiaki Nishida
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3065
摘要： The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.
摘要翻译： 本发明提供了一种干蚀刻方法，其能够在没有受到微载荷效应的限制的情况下获得具有小侧蚀刻的良好轮廓。 使用等离子体蚀刻具有隔离部分和致密部分的图案的样品的干蚀刻方法包括使用包含CF基气体和氮气的蚀刻气体的第一蚀刻步骤，其中蚀刻速率 图案的致密部分的厚度大于掩模图案的隔离部分的蚀刻速率，以及第二蚀刻步骤，其中图案的隔离部分的蚀刻速率大于图案的密集部分的蚀刻速率 模式。
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